Abstract
The changes in film structure of amorphous atomic layer deposited LaAlO3 thin films after thermal annealing were examined by medium-energy ion-scattering measurements and angle-resolved X-ray photoelectron spectroscopy. Thermal annealing induces Si-rich LaSiO and Al-deficient LaAlx Siy Oz layers on a few monolayers of SiO2. Al atoms do not participate in silicate formation during annealing. Instead, they migrate toward the film surface, which induces nonhomogeneity in the films along the vertical direction. The concentrations of Al and La on the film surface increase and decrease, respectively, as a result of Si diffusion from the substrate and silicate formation.
| Original language | English |
|---|---|
| Pages (from-to) | G33-G36 |
| Journal | Electrochemical and Solid-State Letters |
| Volume | 11 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2008 May 26 |
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All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrochemistry
- Electrical and Electronic Engineering
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Thermal annealing effects on the atomic layer deposited LaAlO3 thin films on Si substrate. / Eom, Dail; Hwang, Cheol Seong; Kim, Hyeong Joon; Cho, Mann Ho; Chung, K. B.
In: Electrochemical and Solid-State Letters, Vol. 11, No. 7, 26.05.2008, p. G33-G36.Research output: Contribution to journal › Article
TY - JOUR
T1 - Thermal annealing effects on the atomic layer deposited LaAlO3 thin films on Si substrate
AU - Eom, Dail
AU - Hwang, Cheol Seong
AU - Kim, Hyeong Joon
AU - Cho, Mann Ho
AU - Chung, K. B.
PY - 2008/5/26
Y1 - 2008/5/26
N2 - The changes in film structure of amorphous atomic layer deposited LaAlO3 thin films after thermal annealing were examined by medium-energy ion-scattering measurements and angle-resolved X-ray photoelectron spectroscopy. Thermal annealing induces Si-rich LaSiO and Al-deficient LaAlx Siy Oz layers on a few monolayers of SiO2. Al atoms do not participate in silicate formation during annealing. Instead, they migrate toward the film surface, which induces nonhomogeneity in the films along the vertical direction. The concentrations of Al and La on the film surface increase and decrease, respectively, as a result of Si diffusion from the substrate and silicate formation.
AB - The changes in film structure of amorphous atomic layer deposited LaAlO3 thin films after thermal annealing were examined by medium-energy ion-scattering measurements and angle-resolved X-ray photoelectron spectroscopy. Thermal annealing induces Si-rich LaSiO and Al-deficient LaAlx Siy Oz layers on a few monolayers of SiO2. Al atoms do not participate in silicate formation during annealing. Instead, they migrate toward the film surface, which induces nonhomogeneity in the films along the vertical direction. The concentrations of Al and La on the film surface increase and decrease, respectively, as a result of Si diffusion from the substrate and silicate formation.
UR - http://www.scopus.com/inward/record.url?scp=43949094522&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=43949094522&partnerID=8YFLogxK
U2 - 10.1149/1.2916437
DO - 10.1149/1.2916437
M3 - Article
AN - SCOPUS:43949094522
VL - 11
SP - G33-G36
JO - Electrochemical and Solid-State Letters
JF - Electrochemical and Solid-State Letters
SN - 1099-0062
IS - 7
ER -