Thermal annealing effects on the atomic layer deposited LaAlO3 thin films on Si substrate

Dail Eom, Cheol Seong Hwang, Hyeong Joon Kim, Mann Ho Cho, K. B. Chung

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The changes in film structure of amorphous atomic layer deposited LaAlO3 thin films after thermal annealing were examined by medium-energy ion-scattering measurements and angle-resolved X-ray photoelectron spectroscopy. Thermal annealing induces Si-rich LaSiO and Al-deficient LaAlx Siy Oz layers on a few monolayers of SiO2. Al atoms do not participate in silicate formation during annealing. Instead, they migrate toward the film surface, which induces nonhomogeneity in the films along the vertical direction. The concentrations of Al and La on the film surface increase and decrease, respectively, as a result of Si diffusion from the substrate and silicate formation.

Original languageEnglish
Pages (from-to)G33-G36
JournalElectrochemical and Solid-State Letters
Volume11
Issue number7
DOIs
Publication statusPublished - 2008 May 26

Fingerprint

Annealing
Silicates
Thin films
annealing
Substrates
thin films
silicates
ion scattering
Monolayers
inhomogeneity
X ray photoelectron spectroscopy
photoelectron spectroscopy
Scattering
Ions
Atoms
Hot Temperature
atoms
x rays
energy
Direction compound

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Eom, Dail ; Hwang, Cheol Seong ; Kim, Hyeong Joon ; Cho, Mann Ho ; Chung, K. B. / Thermal annealing effects on the atomic layer deposited LaAlO3 thin films on Si substrate. In: Electrochemical and Solid-State Letters. 2008 ; Vol. 11, No. 7. pp. G33-G36.
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Thermal annealing effects on the atomic layer deposited LaAlO3 thin films on Si substrate. / Eom, Dail; Hwang, Cheol Seong; Kim, Hyeong Joon; Cho, Mann Ho; Chung, K. B.

In: Electrochemical and Solid-State Letters, Vol. 11, No. 7, 26.05.2008, p. G33-G36.

Research output: Contribution to journalArticle

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T1 - Thermal annealing effects on the atomic layer deposited LaAlO3 thin films on Si substrate

AU - Eom, Dail

AU - Hwang, Cheol Seong

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AU - Chung, K. B.

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