Thermal characterization of active layer in pentacene-based organic thin-film transistors

Sun Ho Jang, Moo Whan Shin

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

This reports on the direct thermal observation of the pentacene-based Organic Thin-Film Transistors (OTFT) under the real operating conditions. An electrical technique which employs a thermal transient method was utilized for the investigation of determination of inner structure of device. Applying different input power, the temperature variation in the channel was determined. Under the driving power of 0.226 W, a thermal resistance of 240 °C/W was measured for the OTFT package. It was demonstrated that the heat generation inside the OTFT package increases with the input power to the OTFT package. Thermal distribution inside the OTFT package was mapped using a CFD (Computational Fluid Dynamics) method for the various input power. The results indicate that the design with effective thermal dissipation is imperative for reliable operation of the OTFT package.

Original languageEnglish
JournalCurrent Applied Physics
Volume11
Issue number1 SUPPL.
DOIs
Publication statusPublished - 2011 Jan 1

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Thin film transistors
transistors
thin films
heat generation
Heat generation
thermal resistance
computational fluid dynamics
Heat resistance
Hot Temperature
pentacene
Computational fluid dynamics
dissipation

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

@article{ff225d7062d345418f65dbc77d103113,
title = "Thermal characterization of active layer in pentacene-based organic thin-film transistors",
abstract = "This reports on the direct thermal observation of the pentacene-based Organic Thin-Film Transistors (OTFT) under the real operating conditions. An electrical technique which employs a thermal transient method was utilized for the investigation of determination of inner structure of device. Applying different input power, the temperature variation in the channel was determined. Under the driving power of 0.226 W, a thermal resistance of 240 °C/W was measured for the OTFT package. It was demonstrated that the heat generation inside the OTFT package increases with the input power to the OTFT package. Thermal distribution inside the OTFT package was mapped using a CFD (Computational Fluid Dynamics) method for the various input power. The results indicate that the design with effective thermal dissipation is imperative for reliable operation of the OTFT package.",
author = "Jang, {Sun Ho} and Shin, {Moo Whan}",
year = "2011",
month = "1",
day = "1",
doi = "10.1016/j.cap.2010.11.017",
language = "English",
volume = "11",
journal = "Current Applied Physics",
issn = "1567-1739",
publisher = "Elsevier",
number = "1 SUPPL.",

}

Thermal characterization of active layer in pentacene-based organic thin-film transistors. / Jang, Sun Ho; Shin, Moo Whan.

In: Current Applied Physics, Vol. 11, No. 1 SUPPL., 01.01.2011.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Thermal characterization of active layer in pentacene-based organic thin-film transistors

AU - Jang, Sun Ho

AU - Shin, Moo Whan

PY - 2011/1/1

Y1 - 2011/1/1

N2 - This reports on the direct thermal observation of the pentacene-based Organic Thin-Film Transistors (OTFT) under the real operating conditions. An electrical technique which employs a thermal transient method was utilized for the investigation of determination of inner structure of device. Applying different input power, the temperature variation in the channel was determined. Under the driving power of 0.226 W, a thermal resistance of 240 °C/W was measured for the OTFT package. It was demonstrated that the heat generation inside the OTFT package increases with the input power to the OTFT package. Thermal distribution inside the OTFT package was mapped using a CFD (Computational Fluid Dynamics) method for the various input power. The results indicate that the design with effective thermal dissipation is imperative for reliable operation of the OTFT package.

AB - This reports on the direct thermal observation of the pentacene-based Organic Thin-Film Transistors (OTFT) under the real operating conditions. An electrical technique which employs a thermal transient method was utilized for the investigation of determination of inner structure of device. Applying different input power, the temperature variation in the channel was determined. Under the driving power of 0.226 W, a thermal resistance of 240 °C/W was measured for the OTFT package. It was demonstrated that the heat generation inside the OTFT package increases with the input power to the OTFT package. Thermal distribution inside the OTFT package was mapped using a CFD (Computational Fluid Dynamics) method for the various input power. The results indicate that the design with effective thermal dissipation is imperative for reliable operation of the OTFT package.

UR - http://www.scopus.com/inward/record.url?scp=79953171478&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79953171478&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2010.11.017

DO - 10.1016/j.cap.2010.11.017

M3 - Article

AN - SCOPUS:79953171478

VL - 11

JO - Current Applied Physics

JF - Current Applied Physics

SN - 1567-1739

IS - 1 SUPPL.

ER -