Abstract
This reports on the direct thermal observation of the pentacene-based Organic Thin-Film Transistors (OTFT) under the real operating conditions. An electrical technique which employs a thermal transient method was utilized for the investigation of determination of inner structure of device. Applying different input power, the temperature variation in the channel was determined. Under the driving power of 0.226 W, a thermal resistance of 240 °C/W was measured for the OTFT package. It was demonstrated that the heat generation inside the OTFT package increases with the input power to the OTFT package. Thermal distribution inside the OTFT package was mapped using a CFD (Computational Fluid Dynamics) method for the various input power. The results indicate that the design with effective thermal dissipation is imperative for reliable operation of the OTFT package.
| Original language | English |
|---|---|
| Journal | Current Applied Physics |
| Volume | 11 |
| Issue number | 1 SUPPL. |
| DOIs | |
| Publication status | Published - 2011 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Physics and Astronomy(all)
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Thermal characterization of active layer in pentacene-based organic thin-film transistors. / Jang, Sun Ho; Shin, Moo Whan.
In: Current Applied Physics, Vol. 11, No. 1 SUPPL., 01.01.2011.Research output: Contribution to journal › Article
TY - JOUR
T1 - Thermal characterization of active layer in pentacene-based organic thin-film transistors
AU - Jang, Sun Ho
AU - Shin, Moo Whan
PY - 2011/1/1
Y1 - 2011/1/1
N2 - This reports on the direct thermal observation of the pentacene-based Organic Thin-Film Transistors (OTFT) under the real operating conditions. An electrical technique which employs a thermal transient method was utilized for the investigation of determination of inner structure of device. Applying different input power, the temperature variation in the channel was determined. Under the driving power of 0.226 W, a thermal resistance of 240 °C/W was measured for the OTFT package. It was demonstrated that the heat generation inside the OTFT package increases with the input power to the OTFT package. Thermal distribution inside the OTFT package was mapped using a CFD (Computational Fluid Dynamics) method for the various input power. The results indicate that the design with effective thermal dissipation is imperative for reliable operation of the OTFT package.
AB - This reports on the direct thermal observation of the pentacene-based Organic Thin-Film Transistors (OTFT) under the real operating conditions. An electrical technique which employs a thermal transient method was utilized for the investigation of determination of inner structure of device. Applying different input power, the temperature variation in the channel was determined. Under the driving power of 0.226 W, a thermal resistance of 240 °C/W was measured for the OTFT package. It was demonstrated that the heat generation inside the OTFT package increases with the input power to the OTFT package. Thermal distribution inside the OTFT package was mapped using a CFD (Computational Fluid Dynamics) method for the various input power. The results indicate that the design with effective thermal dissipation is imperative for reliable operation of the OTFT package.
UR - http://www.scopus.com/inward/record.url?scp=79953171478&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79953171478&partnerID=8YFLogxK
U2 - 10.1016/j.cap.2010.11.017
DO - 10.1016/j.cap.2010.11.017
M3 - Article
VL - 11
JO - Current Applied Physics
JF - Current Applied Physics
SN - 1567-1739
IS - 1 SUPPL.
ER -