Thermal characterization of junction in solar cell packages

Sun Ho Jang, Moo Whan Shin

Research output: Contribution to journalArticle

12 Citations (Scopus)


This is the first report on the direct measurement of the junction temperature and on the determination of thermal resistance of a commercial amorphous silicon (a-Si) solar cell package under real operating conditions. Thermal transient method was utilized for the thermal characterization. Irradiation of sunlight to the solar cell package was found to induce significant heat generation inside the solar cell package. It was shown that the driving of the solar cell package with a sun power of 1 sun (100 mW/cm 2 and 1.5 AM) resulted in a junction temperature of about 113 °C. Surprisingly, the temperature difference between the junction and the case surface of the solar cell package was as high as 43 °C. The efficiency drop was observed with the increase of junction temperature in the solar cell package. Thermal resistance was determined under various operating conditions.

Original languageEnglish
Article number5471188
Pages (from-to)743-745
Number of pages3
JournalIEEE Electron Device Letters
Issue number7
Publication statusPublished - 2010 Jul 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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