Thermal characterization of junction in solar cell packages

Sun Ho Jang, Moo Whan Shin

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

This is the first report on the direct measurement of the junction temperature and on the determination of thermal resistance of a commercial amorphous silicon (a-Si) solar cell package under real operating conditions. Thermal transient method was utilized for the thermal characterization. Irradiation of sunlight to the solar cell package was found to induce significant heat generation inside the solar cell package. It was shown that the driving of the solar cell package with a sun power of 1 sun (100 mW/cm 2 and 1.5 AM) resulted in a junction temperature of about 113 °C. Surprisingly, the temperature difference between the junction and the case surface of the solar cell package was as high as 43 °C. The efficiency drop was observed with the increase of junction temperature in the solar cell package. Thermal resistance was determined under various operating conditions.

Original languageEnglish
Article number5471188
Pages (from-to)743-745
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number7
DOIs
Publication statusPublished - 2010 Jul 1

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Solar cells
Heat resistance
Sun
Temperature
Silicon solar cells
Heat generation
Amorphous silicon
Hot Temperature
Irradiation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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abstract = "This is the first report on the direct measurement of the junction temperature and on the determination of thermal resistance of a commercial amorphous silicon (a-Si) solar cell package under real operating conditions. Thermal transient method was utilized for the thermal characterization. Irradiation of sunlight to the solar cell package was found to induce significant heat generation inside the solar cell package. It was shown that the driving of the solar cell package with a sun power of 1 sun (100 mW/cm 2 and 1.5 AM) resulted in a junction temperature of about 113 °C. Surprisingly, the temperature difference between the junction and the case surface of the solar cell package was as high as 43 °C. The efficiency drop was observed with the increase of junction temperature in the solar cell package. Thermal resistance was determined under various operating conditions.",
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Thermal characterization of junction in solar cell packages. / Jang, Sun Ho; Shin, Moo Whan.

In: IEEE Electron Device Letters, Vol. 31, No. 7, 5471188, 01.07.2010, p. 743-745.

Research output: Contribution to journalArticle

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