Abstract
This is the first report on the direct measurement of the junction temperature and on the determination of thermal resistance of a commercial amorphous silicon (a-Si) solar cell package under real operating conditions. Thermal transient method was utilized for the thermal characterization. Irradiation of sunlight to the solar cell package was found to induce significant heat generation inside the solar cell package. It was shown that the driving of the solar cell package with a sun power of 1 sun (100 mW/cm 2 and 1.5 AM) resulted in a junction temperature of about 113 °C. Surprisingly, the temperature difference between the junction and the case surface of the solar cell package was as high as 43 °C. The efficiency drop was observed with the increase of junction temperature in the solar cell package. Thermal resistance was determined under various operating conditions.
| Original language | English |
|---|---|
| Article number | 5471188 |
| Pages (from-to) | 743-745 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 31 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2010 Jul 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Thermal characterization of junction in solar cell packages. / Jang, Sun Ho; Shin, Moo Whan.
In: IEEE Electron Device Letters, Vol. 31, No. 7, 5471188, 01.07.2010, p. 743-745.Research output: Contribution to journal › Article
TY - JOUR
T1 - Thermal characterization of junction in solar cell packages
AU - Jang, Sun Ho
AU - Shin, Moo Whan
PY - 2010/7/1
Y1 - 2010/7/1
N2 - This is the first report on the direct measurement of the junction temperature and on the determination of thermal resistance of a commercial amorphous silicon (a-Si) solar cell package under real operating conditions. Thermal transient method was utilized for the thermal characterization. Irradiation of sunlight to the solar cell package was found to induce significant heat generation inside the solar cell package. It was shown that the driving of the solar cell package with a sun power of 1 sun (100 mW/cm 2 and 1.5 AM) resulted in a junction temperature of about 113 °C. Surprisingly, the temperature difference between the junction and the case surface of the solar cell package was as high as 43 °C. The efficiency drop was observed with the increase of junction temperature in the solar cell package. Thermal resistance was determined under various operating conditions.
AB - This is the first report on the direct measurement of the junction temperature and on the determination of thermal resistance of a commercial amorphous silicon (a-Si) solar cell package under real operating conditions. Thermal transient method was utilized for the thermal characterization. Irradiation of sunlight to the solar cell package was found to induce significant heat generation inside the solar cell package. It was shown that the driving of the solar cell package with a sun power of 1 sun (100 mW/cm 2 and 1.5 AM) resulted in a junction temperature of about 113 °C. Surprisingly, the temperature difference between the junction and the case surface of the solar cell package was as high as 43 °C. The efficiency drop was observed with the increase of junction temperature in the solar cell package. Thermal resistance was determined under various operating conditions.
UR - http://www.scopus.com/inward/record.url?scp=77954131692&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77954131692&partnerID=8YFLogxK
U2 - 10.1109/LED.2010.2048552
DO - 10.1109/LED.2010.2048552
M3 - Article
AN - SCOPUS:77954131692
VL - 31
SP - 743
EP - 745
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 7
M1 - 5471188
ER -