The thermal conductivities of Si1-x Gex nanowires (NWs) synthesized with Ge concentrations of 0.0%, 0.4%, 4%, and 9% and different diameters were measured from 40 to 420 K. The thermal conductivity of Si 1-x Gex NWs decreases as the Ge concentration increases due to alloy scattering. As the diameter of the Si1-x Gex NWs decreases, the thermal conductivity decreases due to phonon boundary scattering. However, the thermal conductivity dependency on the diameter of the NWs is not significant. This indicates that alloy scattering should be the dominant scattering mechanism in Si1-x Gex NWs. This study should provide a basis for designing efficient thermoelectric devices out of Si1-x Gex NWs and Si1-x Gex nanocomposites.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)