Thermal conductivity reduction in an individual single crystalline Bi nanowire by size effect

Jong Wook Roh, Kedar Hippalgaonkar, Joohoon Kang, Seunghyn Lee, Jin Hee Ham, Renkun Chen, Arun Majumdar, Woochul Kim, Wooyoung Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We measured thermal conductivity of an individual single-crystalline Bi nanowire grown by a spontaneous growth method. The measured thermal conductivity (κ) for 98 nm diameter Bi nanowire is about 1.6 W/m·K at 300 K, which is much lower than that of bulk Bi (κ for bulk Bi≈ 8 W/m-K at 300 K). This indicates that the thermal conductivity of Bi nanowires is suppressed by the strong phonon boundary scattering.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages633-634
Number of pages2
DOIs
Publication statusPublished - 2010 May 5
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 2010 Jan 32010 Jan 8

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period10/1/310/1/8

Fingerprint

Nanowires
Thermal conductivity
Crystalline materials
Scattering

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Roh, J. W., Hippalgaonkar, K., Kang, J., Lee, S., Ham, J. H., Chen, R., ... Lee, W. (2010). Thermal conductivity reduction in an individual single crystalline Bi nanowire by size effect. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 633-634). [5424707] (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424707
Roh, Jong Wook ; Hippalgaonkar, Kedar ; Kang, Joohoon ; Lee, Seunghyn ; Ham, Jin Hee ; Chen, Renkun ; Majumdar, Arun ; Kim, Woochul ; Lee, Wooyoung. / Thermal conductivity reduction in an individual single crystalline Bi nanowire by size effect. INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. pp. 633-634 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).
@inproceedings{067fe05b7e614d36863d66ecc9e9526f,
title = "Thermal conductivity reduction in an individual single crystalline Bi nanowire by size effect",
abstract = "We measured thermal conductivity of an individual single-crystalline Bi nanowire grown by a spontaneous growth method. The measured thermal conductivity (κ) for 98 nm diameter Bi nanowire is about 1.6 W/m·K at 300 K, which is much lower than that of bulk Bi (κ for bulk Bi≈ 8 W/m-K at 300 K). This indicates that the thermal conductivity of Bi nanowires is suppressed by the strong phonon boundary scattering.",
author = "Roh, {Jong Wook} and Kedar Hippalgaonkar and Joohoon Kang and Seunghyn Lee and Ham, {Jin Hee} and Renkun Chen and Arun Majumdar and Woochul Kim and Wooyoung Lee",
year = "2010",
month = "5",
day = "5",
doi = "10.1109/INEC.2010.5424707",
language = "English",
isbn = "9781424435449",
series = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",
pages = "633--634",
booktitle = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

}

Roh, JW, Hippalgaonkar, K, Kang, J, Lee, S, Ham, JH, Chen, R, Majumdar, A, Kim, W & Lee, W 2010, Thermal conductivity reduction in an individual single crystalline Bi nanowire by size effect. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424707, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp. 633-634, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 10/1/3. https://doi.org/10.1109/INEC.2010.5424707

Thermal conductivity reduction in an individual single crystalline Bi nanowire by size effect. / Roh, Jong Wook; Hippalgaonkar, Kedar; Kang, Joohoon; Lee, Seunghyn; Ham, Jin Hee; Chen, Renkun; Majumdar, Arun; Kim, Woochul; Lee, Wooyoung.

INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 633-634 5424707 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Thermal conductivity reduction in an individual single crystalline Bi nanowire by size effect

AU - Roh, Jong Wook

AU - Hippalgaonkar, Kedar

AU - Kang, Joohoon

AU - Lee, Seunghyn

AU - Ham, Jin Hee

AU - Chen, Renkun

AU - Majumdar, Arun

AU - Kim, Woochul

AU - Lee, Wooyoung

PY - 2010/5/5

Y1 - 2010/5/5

N2 - We measured thermal conductivity of an individual single-crystalline Bi nanowire grown by a spontaneous growth method. The measured thermal conductivity (κ) for 98 nm diameter Bi nanowire is about 1.6 W/m·K at 300 K, which is much lower than that of bulk Bi (κ for bulk Bi≈ 8 W/m-K at 300 K). This indicates that the thermal conductivity of Bi nanowires is suppressed by the strong phonon boundary scattering.

AB - We measured thermal conductivity of an individual single-crystalline Bi nanowire grown by a spontaneous growth method. The measured thermal conductivity (κ) for 98 nm diameter Bi nanowire is about 1.6 W/m·K at 300 K, which is much lower than that of bulk Bi (κ for bulk Bi≈ 8 W/m-K at 300 K). This indicates that the thermal conductivity of Bi nanowires is suppressed by the strong phonon boundary scattering.

UR - http://www.scopus.com/inward/record.url?scp=77951655161&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77951655161&partnerID=8YFLogxK

U2 - 10.1109/INEC.2010.5424707

DO - 10.1109/INEC.2010.5424707

M3 - Conference contribution

SN - 9781424435449

T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

SP - 633

EP - 634

BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

ER -

Roh JW, Hippalgaonkar K, Kang J, Lee S, Ham JH, Chen R et al. Thermal conductivity reduction in an individual single crystalline Bi nanowire by size effect. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 633-634. 5424707. (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424707