Thermal conductivity reduction in nanostructured semiconductor using broad-band-phonon scattering

Woochul Kim, Arun Majumdar, Arthur Gossard, John Bowers, Pramod Reddy, Joshua Zide, Gehong Zeng, Ali Shakouri

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The thermal conductivity of epitaxially grown superlattices made to take advantage of the various scattering mechanisms to scatter phonons over the entire phonon spectrum was described. Eptaxially grown superlattices of ErAs/InGaAs were used which effectively scatters phonons in various regions of the phonon spectrum. The thermal conductivity was measured by using 3ω technique on 0.1 ML with different period thickness. The thermal conductivity increases again with 5nm period thickness even though its low period thickness.

Original languageEnglish
Title of host publicationProceedings of the 3rd ASME Integrated Nanosystems Conference - Design, Synthesis, and Applications
Pages55-56
Number of pages2
Publication statusPublished - 2004 Dec 1
Event3rd ASME Integrated Nanosystems Conference - Design, Synthesis, and Applications - Pasadena, CA, United States
Duration: 2004 Sep 222004 Sep 24

Publication series

NameProceedings of the 3rd ASME Integrated Nanosystems Conference - Design, Synthesis, and Applications

Other

Other3rd ASME Integrated Nanosystems Conference - Design, Synthesis, and Applications
CountryUnited States
CityPasadena, CA
Period04/9/2204/9/24

Fingerprint

Phonon scattering
Thermal conductivity
Superlattices
Semiconductor materials
Phonons
Scattering

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Kim, W., Majumdar, A., Gossard, A., Bowers, J., Reddy, P., Zide, J., ... Shakouri, A. (2004). Thermal conductivity reduction in nanostructured semiconductor using broad-band-phonon scattering. In Proceedings of the 3rd ASME Integrated Nanosystems Conference - Design, Synthesis, and Applications (pp. 55-56). [NANO2004-46006] (Proceedings of the 3rd ASME Integrated Nanosystems Conference - Design, Synthesis, and Applications).
Kim, Woochul ; Majumdar, Arun ; Gossard, Arthur ; Bowers, John ; Reddy, Pramod ; Zide, Joshua ; Zeng, Gehong ; Shakouri, Ali. / Thermal conductivity reduction in nanostructured semiconductor using broad-band-phonon scattering. Proceedings of the 3rd ASME Integrated Nanosystems Conference - Design, Synthesis, and Applications. 2004. pp. 55-56 (Proceedings of the 3rd ASME Integrated Nanosystems Conference - Design, Synthesis, and Applications).
@inproceedings{c965d26e8eb045f38bcc722df2c0bfe2,
title = "Thermal conductivity reduction in nanostructured semiconductor using broad-band-phonon scattering",
abstract = "The thermal conductivity of epitaxially grown superlattices made to take advantage of the various scattering mechanisms to scatter phonons over the entire phonon spectrum was described. Eptaxially grown superlattices of ErAs/InGaAs were used which effectively scatters phonons in various regions of the phonon spectrum. The thermal conductivity was measured by using 3ω technique on 0.1 ML with different period thickness. The thermal conductivity increases again with 5nm period thickness even though its low period thickness.",
author = "Woochul Kim and Arun Majumdar and Arthur Gossard and John Bowers and Pramod Reddy and Joshua Zide and Gehong Zeng and Ali Shakouri",
year = "2004",
month = "12",
day = "1",
language = "English",
isbn = "0791841774",
series = "Proceedings of the 3rd ASME Integrated Nanosystems Conference - Design, Synthesis, and Applications",
pages = "55--56",
booktitle = "Proceedings of the 3rd ASME Integrated Nanosystems Conference - Design, Synthesis, and Applications",

}

Kim, W, Majumdar, A, Gossard, A, Bowers, J, Reddy, P, Zide, J, Zeng, G & Shakouri, A 2004, Thermal conductivity reduction in nanostructured semiconductor using broad-band-phonon scattering. in Proceedings of the 3rd ASME Integrated Nanosystems Conference - Design, Synthesis, and Applications., NANO2004-46006, Proceedings of the 3rd ASME Integrated Nanosystems Conference - Design, Synthesis, and Applications, pp. 55-56, 3rd ASME Integrated Nanosystems Conference - Design, Synthesis, and Applications, Pasadena, CA, United States, 04/9/22.

Thermal conductivity reduction in nanostructured semiconductor using broad-band-phonon scattering. / Kim, Woochul; Majumdar, Arun; Gossard, Arthur; Bowers, John; Reddy, Pramod; Zide, Joshua; Zeng, Gehong; Shakouri, Ali.

Proceedings of the 3rd ASME Integrated Nanosystems Conference - Design, Synthesis, and Applications. 2004. p. 55-56 NANO2004-46006 (Proceedings of the 3rd ASME Integrated Nanosystems Conference - Design, Synthesis, and Applications).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Thermal conductivity reduction in nanostructured semiconductor using broad-band-phonon scattering

AU - Kim, Woochul

AU - Majumdar, Arun

AU - Gossard, Arthur

AU - Bowers, John

AU - Reddy, Pramod

AU - Zide, Joshua

AU - Zeng, Gehong

AU - Shakouri, Ali

PY - 2004/12/1

Y1 - 2004/12/1

N2 - The thermal conductivity of epitaxially grown superlattices made to take advantage of the various scattering mechanisms to scatter phonons over the entire phonon spectrum was described. Eptaxially grown superlattices of ErAs/InGaAs were used which effectively scatters phonons in various regions of the phonon spectrum. The thermal conductivity was measured by using 3ω technique on 0.1 ML with different period thickness. The thermal conductivity increases again with 5nm period thickness even though its low period thickness.

AB - The thermal conductivity of epitaxially grown superlattices made to take advantage of the various scattering mechanisms to scatter phonons over the entire phonon spectrum was described. Eptaxially grown superlattices of ErAs/InGaAs were used which effectively scatters phonons in various regions of the phonon spectrum. The thermal conductivity was measured by using 3ω technique on 0.1 ML with different period thickness. The thermal conductivity increases again with 5nm period thickness even though its low period thickness.

UR - http://www.scopus.com/inward/record.url?scp=21244496408&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21244496408&partnerID=8YFLogxK

M3 - Conference contribution

SN - 0791841774

SN - 9780791841778

T3 - Proceedings of the 3rd ASME Integrated Nanosystems Conference - Design, Synthesis, and Applications

SP - 55

EP - 56

BT - Proceedings of the 3rd ASME Integrated Nanosystems Conference - Design, Synthesis, and Applications

ER -

Kim W, Majumdar A, Gossard A, Bowers J, Reddy P, Zide J et al. Thermal conductivity reduction in nanostructured semiconductor using broad-band-phonon scattering. In Proceedings of the 3rd ASME Integrated Nanosystems Conference - Design, Synthesis, and Applications. 2004. p. 55-56. NANO2004-46006. (Proceedings of the 3rd ASME Integrated Nanosystems Conference - Design, Synthesis, and Applications).