Thermal conductivity reduction in nanostructured semiconductor using broad-band-phonon scattering

Woochul Kim, Arun Majumdar, Arthur Gossard, John Bowers, Pramod Reddy, Joshua Zide, Gehong Zeng, Ali Shakouri

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The thermal conductivity of epitaxially grown superlattices made to take advantage of the various scattering mechanisms to scatter phonons over the entire phonon spectrum was described. Eptaxially grown superlattices of ErAs/InGaAs were used which effectively scatters phonons in various regions of the phonon spectrum. The thermal conductivity was measured by using 3ω technique on 0.1 ML with different period thickness. The thermal conductivity increases again with 5nm period thickness even though its low period thickness.

Original languageEnglish
Title of host publicationProceedings of the 3rd ASME Integrated Nanosystems Conference - Design, Synthesis, and Applications
Pages55-56
Number of pages2
Publication statusPublished - 2004 Dec 1
Event3rd ASME Integrated Nanosystems Conference - Design, Synthesis, and Applications - Pasadena, CA, United States
Duration: 2004 Sep 222004 Sep 24

Publication series

NameProceedings of the 3rd ASME Integrated Nanosystems Conference - Design, Synthesis, and Applications

Other

Other3rd ASME Integrated Nanosystems Conference - Design, Synthesis, and Applications
CountryUnited States
CityPasadena, CA
Period04/9/2204/9/24

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Kim, W., Majumdar, A., Gossard, A., Bowers, J., Reddy, P., Zide, J., Zeng, G., & Shakouri, A. (2004). Thermal conductivity reduction in nanostructured semiconductor using broad-band-phonon scattering. In Proceedings of the 3rd ASME Integrated Nanosystems Conference - Design, Synthesis, and Applications (pp. 55-56). [NANO2004-46006] (Proceedings of the 3rd ASME Integrated Nanosystems Conference - Design, Synthesis, and Applications).