Temperature uniformity of a wafer during post-exposure bake (PEB) in lithography is an important factor in controlling critical dimension (CD) uniformity. In this study, a new hot plate system for the PEB of a 300-mm wafer was analyzed and designed. First, temperature deviation on the wafer caused by warpage was investigated, and the heater pattern of the multi-zone hot plate in the bake system was numerically analyzed. Then, a new heater pattern to enhance the temperature uniformity was proposed and tested experimentally. As a result, temperature uniformity within 0.087 °C on a 300-mm wafer was achieved.
Bibliographical noteFunding Information:
This research was supported by Samsung Electronics.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering