Thermal design of hot plate for 300-mm wafer heating in post-exposure bake

Jinho Lee, Hyun Goo Kwon, Sangwoo Shin, Sangjo Han, Jungik Ha, Hosun Yoo, Hyung Hee Cho

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Temperature uniformity of a wafer during post-exposure bake (PEB) in lithography is an important factor in controlling critical dimension (CD) uniformity. In this study, a new hot plate system for the PEB of a 300-mm wafer was analyzed and designed. First, temperature deviation on the wafer caused by warpage was investigated, and the heater pattern of the multi-zone hot plate in the bake system was numerically analyzed. Then, a new heater pattern to enhance the temperature uniformity was proposed and tested experimentally. As a result, temperature uniformity within 0.087 °C on a 300-mm wafer was achieved.

Original languageEnglish
Pages (from-to)3195-3198
Number of pages4
JournalMicroelectronic Engineering
Volume88
Issue number11
DOIs
Publication statusPublished - 2011 Nov 1

Fingerprint

wafers
Heating
heating
heaters
warpage
Temperature
temperature
Lithography
lithography
deviation
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Lee, Jinho ; Kwon, Hyun Goo ; Shin, Sangwoo ; Han, Sangjo ; Ha, Jungik ; Yoo, Hosun ; Cho, Hyung Hee. / Thermal design of hot plate for 300-mm wafer heating in post-exposure bake. In: Microelectronic Engineering. 2011 ; Vol. 88, No. 11. pp. 3195-3198.
@article{4776c741f5154c6788767c404f2920b4,
title = "Thermal design of hot plate for 300-mm wafer heating in post-exposure bake",
abstract = "Temperature uniformity of a wafer during post-exposure bake (PEB) in lithography is an important factor in controlling critical dimension (CD) uniformity. In this study, a new hot plate system for the PEB of a 300-mm wafer was analyzed and designed. First, temperature deviation on the wafer caused by warpage was investigated, and the heater pattern of the multi-zone hot plate in the bake system was numerically analyzed. Then, a new heater pattern to enhance the temperature uniformity was proposed and tested experimentally. As a result, temperature uniformity within 0.087 °C on a 300-mm wafer was achieved.",
author = "Jinho Lee and Kwon, {Hyun Goo} and Sangwoo Shin and Sangjo Han and Jungik Ha and Hosun Yoo and Cho, {Hyung Hee}",
year = "2011",
month = "11",
day = "1",
doi = "10.1016/j.mee.2011.08.012",
language = "English",
volume = "88",
pages = "3195--3198",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",
number = "11",

}

Thermal design of hot plate for 300-mm wafer heating in post-exposure bake. / Lee, Jinho; Kwon, Hyun Goo; Shin, Sangwoo; Han, Sangjo; Ha, Jungik; Yoo, Hosun; Cho, Hyung Hee.

In: Microelectronic Engineering, Vol. 88, No. 11, 01.11.2011, p. 3195-3198.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Thermal design of hot plate for 300-mm wafer heating in post-exposure bake

AU - Lee, Jinho

AU - Kwon, Hyun Goo

AU - Shin, Sangwoo

AU - Han, Sangjo

AU - Ha, Jungik

AU - Yoo, Hosun

AU - Cho, Hyung Hee

PY - 2011/11/1

Y1 - 2011/11/1

N2 - Temperature uniformity of a wafer during post-exposure bake (PEB) in lithography is an important factor in controlling critical dimension (CD) uniformity. In this study, a new hot plate system for the PEB of a 300-mm wafer was analyzed and designed. First, temperature deviation on the wafer caused by warpage was investigated, and the heater pattern of the multi-zone hot plate in the bake system was numerically analyzed. Then, a new heater pattern to enhance the temperature uniformity was proposed and tested experimentally. As a result, temperature uniformity within 0.087 °C on a 300-mm wafer was achieved.

AB - Temperature uniformity of a wafer during post-exposure bake (PEB) in lithography is an important factor in controlling critical dimension (CD) uniformity. In this study, a new hot plate system for the PEB of a 300-mm wafer was analyzed and designed. First, temperature deviation on the wafer caused by warpage was investigated, and the heater pattern of the multi-zone hot plate in the bake system was numerically analyzed. Then, a new heater pattern to enhance the temperature uniformity was proposed and tested experimentally. As a result, temperature uniformity within 0.087 °C on a 300-mm wafer was achieved.

UR - http://www.scopus.com/inward/record.url?scp=80053367800&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80053367800&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2011.08.012

DO - 10.1016/j.mee.2011.08.012

M3 - Article

AN - SCOPUS:80053367800

VL - 88

SP - 3195

EP - 3198

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 11

ER -