Thermal desorption of Ge native oxides and loss of Ge from the surface

Jungwoo Oh, Joe C. Campbell

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The authors have identified oxidation and desorption processes of Ge native oxide by chemical bonding states measured by X-ray photoemission spectroscopy. Ge oxidation occurs at the temperatures of 450500 °C in an oxidizing ambient. Ge desorption in nitrogen ambient is observed at the temperatures of 500550 °C, which is higher than the oxidation temperature by 50 °C. Combined oxidation and desorption processes proceed subsequently and cause a loss of Ge from the surface when Ge is annealed in oxidizing ambient at a temperature higher than desorption temperature. The surface loss is avoided when Ge is annealed with SiO2 cap layer in an identical annealing condition.

Original languageEnglish
Pages (from-to)185-188
Number of pages4
JournalMaterials Science in Semiconductor Processing
Volume13
Issue number3
DOIs
Publication statusPublished - 2010 Sep 1

Fingerprint

Thermal desorption
Oxides
desorption
Desorption
oxidation
oxides
Oxidation
Temperature
temperature
caps
Photoelectron spectroscopy
X ray spectroscopy
photoelectric emission
nitrogen
Nitrogen
annealing
causes
Annealing
spectroscopy
x rays

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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Thermal desorption of Ge native oxides and loss of Ge from the surface. / Oh, Jungwoo; Campbell, Joe C.

In: Materials Science in Semiconductor Processing, Vol. 13, No. 3, 01.09.2010, p. 185-188.

Research output: Contribution to journalArticle

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AU - Campbell, Joe C.

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AB - The authors have identified oxidation and desorption processes of Ge native oxide by chemical bonding states measured by X-ray photoemission spectroscopy. Ge oxidation occurs at the temperatures of 450500 °C in an oxidizing ambient. Ge desorption in nitrogen ambient is observed at the temperatures of 500550 °C, which is higher than the oxidation temperature by 50 °C. Combined oxidation and desorption processes proceed subsequently and cause a loss of Ge from the surface when Ge is annealed in oxidizing ambient at a temperature higher than desorption temperature. The surface loss is avoided when Ge is annealed with SiO2 cap layer in an identical annealing condition.

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