Thermal Desorption of Ge Native Oxides and the Loss of Ge fom the Surface

Jungwoo Oh, Joe C. Campbell

Research output: Contribution to journalArticle

74 Citations (Scopus)

Abstract

The annealing behavior of Ge native oxides has been studied with x-ray photoemission spectroscopy (XPS). The native oxides were primarily GeO 2 with small amounts of GeOx (x < 2). Annealing was performed using a rapid thermal processor (RTP) with a N2 purge at atmospheric pressure. Ion-implanted Ge substrates were used to investigate the loss of Ge from the surface due to thermal desorption of Ge oxides. It was found that thermal desorption of volatile Ge oxides and oxidization of Ge take place successively, which results in the loss of Ge from the surface.

Original languageEnglish
Pages (from-to)364-367
Number of pages4
JournalJournal of Electronic Materials
Volume33
Issue number4
DOIs
Publication statusPublished - 2004 Jan 1

Fingerprint

Thermal desorption
Oxides
desorption
oxides
Annealing
annealing
Photoelectron spectroscopy
Atmospheric pressure
central processing units
atmospheric pressure
photoelectric emission
Ions
X rays
Substrates
spectroscopy
ions
x rays

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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Thermal Desorption of Ge Native Oxides and the Loss of Ge fom the Surface. / Oh, Jungwoo; Campbell, Joe C.

In: Journal of Electronic Materials, Vol. 33, No. 4, 01.01.2004, p. 364-367.

Research output: Contribution to journalArticle

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