Thermal effects of substrates on the performance of AlGaN/GaN HFETs

Jeong Park; Chin C. Lee; J. W. Kim; J. S. Lee; W. J. Hwang; M. W. Shin

doi:10.1002/pssc.200303465

Thermal effects of substrates on the performance of AlGaN/GaN HFETs

Jeong Park, Chin C. Lee, J. W. Kim, J. S. Lee, W. J. Hwang, M. W. Shin

School of Integrated Technology

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

In this paper, we report on the analytical thermal modeling and temperature measurement of AlGaN/GaN HFETs fabricated using the sapphire and SiC substrates. The thermal modeling was conducted by the unit temperature profile approach and the thermal measurement was made using the nematic liquid crystal thermogrphic method. The calculated data and the measured results were found out to agree well and exhibited the linear relationship of peak temperature and input power. For the same drive condition at gate voltage, V_gs = 0 V, it was found out that the AlGaN/GaN HFET built on SiC delivers twice more current comparing to its sapphire counterpart. Under the input power of 0.63 W, the device with the sapphire substrate exhibits the peak temperature of 110 °C, but the peak temperature of the device built on the SiC substrate is measured to be about 40 °C.

Original language	English
Pages (from-to)	2364-2367
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200303465
Publication status	Published - 2003
Event	5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan Duration: 2003 May 25 → 2003 May 30

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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10.1002/pssc.200303465

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title = "Thermal effects of substrates on the performance of AlGaN/GaN HFETs",

abstract = "In this paper, we report on the analytical thermal modeling and temperature measurement of AlGaN/GaN HFETs fabricated using the sapphire and SiC substrates. The thermal modeling was conducted by the unit temperature profile approach and the thermal measurement was made using the nematic liquid crystal thermogrphic method. The calculated data and the measured results were found out to agree well and exhibited the linear relationship of peak temperature and input power. For the same drive condition at gate voltage, Vgs = 0 V, it was found out that the AlGaN/GaN HFET built on SiC delivers twice more current comparing to its sapphire counterpart. Under the input power of 0.63 W, the device with the sapphire substrate exhibits the peak temperature of 110 °C, but the peak temperature of the device built on the SiC substrate is measured to be about 40 °C.",

author = "Jeong Park and Lee, {Chin C.} and Kim, {J. W.} and Lee, {J. S.} and Hwang, {W. J.} and Shin, {M. W.}",

year = "2003",

doi = "10.1002/pssc.200303465",

language = "English",

pages = "2364--2367",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

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T1 - Thermal effects of substrates on the performance of AlGaN/GaN HFETs

AU - Park, Jeong

AU - Lee, Chin C.

AU - Kim, J. W.

AU - Lee, J. S.

AU - Hwang, W. J.

AU - Shin, M. W.

PY - 2003

Y1 - 2003

N2 - In this paper, we report on the analytical thermal modeling and temperature measurement of AlGaN/GaN HFETs fabricated using the sapphire and SiC substrates. The thermal modeling was conducted by the unit temperature profile approach and the thermal measurement was made using the nematic liquid crystal thermogrphic method. The calculated data and the measured results were found out to agree well and exhibited the linear relationship of peak temperature and input power. For the same drive condition at gate voltage, Vgs = 0 V, it was found out that the AlGaN/GaN HFET built on SiC delivers twice more current comparing to its sapphire counterpart. Under the input power of 0.63 W, the device with the sapphire substrate exhibits the peak temperature of 110 °C, but the peak temperature of the device built on the SiC substrate is measured to be about 40 °C.

AB - In this paper, we report on the analytical thermal modeling and temperature measurement of AlGaN/GaN HFETs fabricated using the sapphire and SiC substrates. The thermal modeling was conducted by the unit temperature profile approach and the thermal measurement was made using the nematic liquid crystal thermogrphic method. The calculated data and the measured results were found out to agree well and exhibited the linear relationship of peak temperature and input power. For the same drive condition at gate voltage, Vgs = 0 V, it was found out that the AlGaN/GaN HFET built on SiC delivers twice more current comparing to its sapphire counterpart. Under the input power of 0.63 W, the device with the sapphire substrate exhibits the peak temperature of 110 °C, but the peak temperature of the device built on the SiC substrate is measured to be about 40 °C.

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