Thermal effects of substrates on the performance of AlGaN/GaN HFETs

Jeong Park, Chin C. Lee, J. W. Kim, J. S. Lee, W. J. Hwang, Moo Whan Shin

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

In this paper, we report on the analytical thermal modeling and temperature measurement of AlGaN/GaN HFETs fabricated using the sapphire and SiC substrates. The thermal modeling was conducted by the unit temperature profile approach and the thermal measurement was made using the nematic liquid crystal thermogrphic method. The calculated data and the measured results were found out to agree well and exhibited the linear relationship of peak temperature and input power. For the same drive condition at gate voltage, Vgs = 0 V, it was found out that the AlGaN/GaN HFET built on SiC delivers twice more current comparing to its sapphire counterpart. Under the input power of 0.63 W, the device with the sapphire substrate exhibits the peak temperature of 110 °C, but the peak temperature of the device built on the SiC substrate is measured to be about 40 °C.

Original languageEnglish
Pages (from-to)2364-2367
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number7
DOIs
Publication statusPublished - 2003 Dec 1
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: 2003 May 252003 May 30

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temperature effects
sapphire
temperature profiles
temperature
temperature measurement
liquid crystals
electric potential

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

Park, Jeong ; Lee, Chin C. ; Kim, J. W. ; Lee, J. S. ; Hwang, W. J. ; Shin, Moo Whan. / Thermal effects of substrates on the performance of AlGaN/GaN HFETs. In: Physica Status Solidi C: Conferences. 2003 ; No. 7. pp. 2364-2367.
@article{aa12c40905f04f3ab259563788833eba,
title = "Thermal effects of substrates on the performance of AlGaN/GaN HFETs",
abstract = "In this paper, we report on the analytical thermal modeling and temperature measurement of AlGaN/GaN HFETs fabricated using the sapphire and SiC substrates. The thermal modeling was conducted by the unit temperature profile approach and the thermal measurement was made using the nematic liquid crystal thermogrphic method. The calculated data and the measured results were found out to agree well and exhibited the linear relationship of peak temperature and input power. For the same drive condition at gate voltage, Vgs = 0 V, it was found out that the AlGaN/GaN HFET built on SiC delivers twice more current comparing to its sapphire counterpart. Under the input power of 0.63 W, the device with the sapphire substrate exhibits the peak temperature of 110 °C, but the peak temperature of the device built on the SiC substrate is measured to be about 40 °C.",
author = "Jeong Park and Lee, {Chin C.} and Kim, {J. W.} and Lee, {J. S.} and Hwang, {W. J.} and Shin, {Moo Whan}",
year = "2003",
month = "12",
day = "1",
doi = "10.1002/pssc.200303465",
language = "English",
pages = "2364--2367",
journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
issn = "1862-6351",
publisher = "Wiley-VCH Verlag",
number = "7",

}

Thermal effects of substrates on the performance of AlGaN/GaN HFETs. / Park, Jeong; Lee, Chin C.; Kim, J. W.; Lee, J. S.; Hwang, W. J.; Shin, Moo Whan.

In: Physica Status Solidi C: Conferences, No. 7, 01.12.2003, p. 2364-2367.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Thermal effects of substrates on the performance of AlGaN/GaN HFETs

AU - Park, Jeong

AU - Lee, Chin C.

AU - Kim, J. W.

AU - Lee, J. S.

AU - Hwang, W. J.

AU - Shin, Moo Whan

PY - 2003/12/1

Y1 - 2003/12/1

N2 - In this paper, we report on the analytical thermal modeling and temperature measurement of AlGaN/GaN HFETs fabricated using the sapphire and SiC substrates. The thermal modeling was conducted by the unit temperature profile approach and the thermal measurement was made using the nematic liquid crystal thermogrphic method. The calculated data and the measured results were found out to agree well and exhibited the linear relationship of peak temperature and input power. For the same drive condition at gate voltage, Vgs = 0 V, it was found out that the AlGaN/GaN HFET built on SiC delivers twice more current comparing to its sapphire counterpart. Under the input power of 0.63 W, the device with the sapphire substrate exhibits the peak temperature of 110 °C, but the peak temperature of the device built on the SiC substrate is measured to be about 40 °C.

AB - In this paper, we report on the analytical thermal modeling and temperature measurement of AlGaN/GaN HFETs fabricated using the sapphire and SiC substrates. The thermal modeling was conducted by the unit temperature profile approach and the thermal measurement was made using the nematic liquid crystal thermogrphic method. The calculated data and the measured results were found out to agree well and exhibited the linear relationship of peak temperature and input power. For the same drive condition at gate voltage, Vgs = 0 V, it was found out that the AlGaN/GaN HFET built on SiC delivers twice more current comparing to its sapphire counterpart. Under the input power of 0.63 W, the device with the sapphire substrate exhibits the peak temperature of 110 °C, but the peak temperature of the device built on the SiC substrate is measured to be about 40 °C.

UR - http://www.scopus.com/inward/record.url?scp=33644594939&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33644594939&partnerID=8YFLogxK

U2 - 10.1002/pssc.200303465

DO - 10.1002/pssc.200303465

M3 - Conference article

SP - 2364

EP - 2367

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

IS - 7

ER -