Abstract
In this paper, we report on the analytical thermal modeling and temperature measurement of AlGaN/GaN HFETs fabricated using the sapphire and SiC substrates. The thermal modeling was conducted by the unit temperature profile approach and the thermal measurement was made using the nematic liquid crystal thermogrphic method. The calculated data and the measured results were found out to agree well and exhibited the linear relationship of peak temperature and input power. For the same drive condition at gate voltage, Vgs = 0 V, it was found out that the AlGaN/GaN HFET built on SiC delivers twice more current comparing to its sapphire counterpart. Under the input power of 0.63 W, the device with the sapphire substrate exhibits the peak temperature of 110 °C, but the peak temperature of the device built on the SiC substrate is measured to be about 40 °C.
| Original language | English |
|---|---|
| Pages (from-to) | 2364-2367 |
| Number of pages | 4 |
| Journal | Physica Status Solidi C: Conferences |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2003 Dec 1 |
| Event | 5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan Duration: 2003 May 25 → 2003 May 30 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
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Thermal effects of substrates on the performance of AlGaN/GaN HFETs. / Park, Jeong; Lee, Chin C.; Kim, J. W.; Lee, J. S.; Hwang, W. J.; Shin, Moo Whan.
In: Physica Status Solidi C: Conferences, No. 7, 01.12.2003, p. 2364-2367.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - Thermal effects of substrates on the performance of AlGaN/GaN HFETs
AU - Park, Jeong
AU - Lee, Chin C.
AU - Kim, J. W.
AU - Lee, J. S.
AU - Hwang, W. J.
AU - Shin, Moo Whan
PY - 2003/12/1
Y1 - 2003/12/1
N2 - In this paper, we report on the analytical thermal modeling and temperature measurement of AlGaN/GaN HFETs fabricated using the sapphire and SiC substrates. The thermal modeling was conducted by the unit temperature profile approach and the thermal measurement was made using the nematic liquid crystal thermogrphic method. The calculated data and the measured results were found out to agree well and exhibited the linear relationship of peak temperature and input power. For the same drive condition at gate voltage, Vgs = 0 V, it was found out that the AlGaN/GaN HFET built on SiC delivers twice more current comparing to its sapphire counterpart. Under the input power of 0.63 W, the device with the sapphire substrate exhibits the peak temperature of 110 °C, but the peak temperature of the device built on the SiC substrate is measured to be about 40 °C.
AB - In this paper, we report on the analytical thermal modeling and temperature measurement of AlGaN/GaN HFETs fabricated using the sapphire and SiC substrates. The thermal modeling was conducted by the unit temperature profile approach and the thermal measurement was made using the nematic liquid crystal thermogrphic method. The calculated data and the measured results were found out to agree well and exhibited the linear relationship of peak temperature and input power. For the same drive condition at gate voltage, Vgs = 0 V, it was found out that the AlGaN/GaN HFET built on SiC delivers twice more current comparing to its sapphire counterpart. Under the input power of 0.63 W, the device with the sapphire substrate exhibits the peak temperature of 110 °C, but the peak temperature of the device built on the SiC substrate is measured to be about 40 °C.
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U2 - 10.1002/pssc.200303465
DO - 10.1002/pssc.200303465
M3 - Conference article
SP - 2364
EP - 2367
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
IS - 7
ER -