Thermal endurance and microstructural evolution of PtGe for high-performance nano-scale Ge-on-Si MOSFETs

Min Ho Kang, Hong Sik Shin, Se Kyung Oh, Jung Ho Yoo, Ga Won Lee, Jungwoo Oh, Prashant Majhi, Raj Jammy, Hi Deok Lee

Research output: Contribution to journalArticle

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Abstract

The thermal endurance and microstructural evolution of Ni-germanide (NiGe) and Pt-germanide (PtGe) on a Ge-on-Si substrate were compared in this paper. In case of the Ni/TiN structure, the sheet resistance exhibited a stable RTP window of 350 to 600 °C, while that of the Pt/TiN structure showed more stable characteristics up to 700 b C. Furthermore, after post-germanidation annealing, NiGe exhibited the formation of islands due to the severe agglomeration as well as a prominent grain boundary grooving, which accounts for the sharp increase of the sheet resistance from 550 °C, whereas PtGe showed a smooth and continuous surface morphological stability without signs of agglomeration even up to 600 °C. Although about two times higher resistivity (31.5 yufl-cm) and greater Ge consumption (3.27 nm) were shown, PtGe showed more stable sheet resistance, better surface and interface morphological stability and a wider thermal processing window above 100 °C than NiGe. Therefore, PtGe is more suitable for the germanided shallow source/drain for nano-scale Ge MOSFETs than NiGe.

Original languageEnglish
Pages (from-to)5633-5639
Number of pages7
JournalJournal of Nanoscience and Nanotechnology
Volume11
Issue number7
DOIs
Publication statusPublished - 2011 Jul 1

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Kang, Min Ho ; Shin, Hong Sik ; Oh, Se Kyung ; Yoo, Jung Ho ; Lee, Ga Won ; Oh, Jungwoo ; Majhi, Prashant ; Jammy, Raj ; Lee, Hi Deok. / Thermal endurance and microstructural evolution of PtGe for high-performance nano-scale Ge-on-Si MOSFETs. In: Journal of Nanoscience and Nanotechnology. 2011 ; Vol. 11, No. 7. pp. 5633-5639.
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abstract = "The thermal endurance and microstructural evolution of Ni-germanide (NiGe) and Pt-germanide (PtGe) on a Ge-on-Si substrate were compared in this paper. In case of the Ni/TiN structure, the sheet resistance exhibited a stable RTP window of 350 to 600 °C, while that of the Pt/TiN structure showed more stable characteristics up to 700 b C. Furthermore, after post-germanidation annealing, NiGe exhibited the formation of islands due to the severe agglomeration as well as a prominent grain boundary grooving, which accounts for the sharp increase of the sheet resistance from 550 °C, whereas PtGe showed a smooth and continuous surface morphological stability without signs of agglomeration even up to 600 °C. Although about two times higher resistivity (31.5 yufl-cm) and greater Ge consumption (3.27 nm) were shown, PtGe showed more stable sheet resistance, better surface and interface morphological stability and a wider thermal processing window above 100 °C than NiGe. Therefore, PtGe is more suitable for the germanided shallow source/drain for nano-scale Ge MOSFETs than NiGe.",
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Thermal endurance and microstructural evolution of PtGe for high-performance nano-scale Ge-on-Si MOSFETs. / Kang, Min Ho; Shin, Hong Sik; Oh, Se Kyung; Yoo, Jung Ho; Lee, Ga Won; Oh, Jungwoo; Majhi, Prashant; Jammy, Raj; Lee, Hi Deok.

In: Journal of Nanoscience and Nanotechnology, Vol. 11, No. 7, 01.07.2011, p. 5633-5639.

Research output: Contribution to journalArticle

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AU - Kang, Min Ho

AU - Shin, Hong Sik

AU - Oh, Se Kyung

AU - Yoo, Jung Ho

AU - Lee, Ga Won

AU - Oh, Jungwoo

AU - Majhi, Prashant

AU - Jammy, Raj

AU - Lee, Hi Deok

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N2 - The thermal endurance and microstructural evolution of Ni-germanide (NiGe) and Pt-germanide (PtGe) on a Ge-on-Si substrate were compared in this paper. In case of the Ni/TiN structure, the sheet resistance exhibited a stable RTP window of 350 to 600 °C, while that of the Pt/TiN structure showed more stable characteristics up to 700 b C. Furthermore, after post-germanidation annealing, NiGe exhibited the formation of islands due to the severe agglomeration as well as a prominent grain boundary grooving, which accounts for the sharp increase of the sheet resistance from 550 °C, whereas PtGe showed a smooth and continuous surface morphological stability without signs of agglomeration even up to 600 °C. Although about two times higher resistivity (31.5 yufl-cm) and greater Ge consumption (3.27 nm) were shown, PtGe showed more stable sheet resistance, better surface and interface morphological stability and a wider thermal processing window above 100 °C than NiGe. Therefore, PtGe is more suitable for the germanided shallow source/drain for nano-scale Ge MOSFETs than NiGe.

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