Thermal immune Ni germanide for high performance Ge MOSFETs on Ge-on- Si substrate utilizing Ni0.95Pd0.05 alloy

Ying Ying Zhang, Jungwoo Oh, In Shik Han, Zhun Zhong, Shi Guang Li, Soon Yen Jung, Kee Young Park, Hong Sik Shin, Won Ho Choi, Hyuk Min Kwon, Wei Yip Loh, Prashant Majhi, Raj Jammy, Hi Deok Lee

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Highly thermally stable Ni germanide technology for high performance germanium metal-oxide-semiconductor field-effect transistors (Ge MOSFETs) is proposed, utilizing Pd incorporation into Ni germanide. The proposed Ni germanide shows not only the improvement of thermal stability but also the reduction of hole barrier height, which can improve the device on-current by reducing the Ni germanide to p+ source/ drain contact resistance. The proposed Ni germanide showed a stable sheet resistance of up to 500 °C 30-min postgermanidation annealing due to the suppression of agglomeration and oxidation of Ni germanide and the diffusion of Ni and Ge atoms by the incorporated Pd. Therefore, the proposed Ni0.95 Pd0.05 alloy could be promising for the high mobility Ge MOSFET applications.

Original languageEnglish
Pages (from-to)348-353
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume56
Issue number2
DOIs
Publication statusPublished - 2009 Jan 15

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Germanium
Sheet resistance
MOSFET devices
Contact resistance
Thermodynamic stability
Agglomeration
Annealing
Atoms
Oxidation
Substrates
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Zhang, Ying Ying ; Oh, Jungwoo ; Han, In Shik ; Zhong, Zhun ; Li, Shi Guang ; Jung, Soon Yen ; Park, Kee Young ; Shin, Hong Sik ; Choi, Won Ho ; Kwon, Hyuk Min ; Loh, Wei Yip ; Majhi, Prashant ; Jammy, Raj ; Lee, Hi Deok. / Thermal immune Ni germanide for high performance Ge MOSFETs on Ge-on- Si substrate utilizing Ni0.95Pd0.05 alloy. In: IEEE Transactions on Electron Devices. 2009 ; Vol. 56, No. 2. pp. 348-353.
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abstract = "Highly thermally stable Ni germanide technology for high performance germanium metal-oxide-semiconductor field-effect transistors (Ge MOSFETs) is proposed, utilizing Pd incorporation into Ni germanide. The proposed Ni germanide shows not only the improvement of thermal stability but also the reduction of hole barrier height, which can improve the device on-current by reducing the Ni germanide to p+ source/ drain contact resistance. The proposed Ni germanide showed a stable sheet resistance of up to 500 °C 30-min postgermanidation annealing due to the suppression of agglomeration and oxidation of Ni germanide and the diffusion of Ni and Ge atoms by the incorporated Pd. Therefore, the proposed Ni0.95 Pd0.05 alloy could be promising for the high mobility Ge MOSFET applications.",
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Zhang, YY, Oh, J, Han, IS, Zhong, Z, Li, SG, Jung, SY, Park, KY, Shin, HS, Choi, WH, Kwon, HM, Loh, WY, Majhi, P, Jammy, R & Lee, HD 2009, 'Thermal immune Ni germanide for high performance Ge MOSFETs on Ge-on- Si substrate utilizing Ni0.95Pd0.05 alloy', IEEE Transactions on Electron Devices, vol. 56, no. 2, pp. 348-353. https://doi.org/10.1109/TED.2008.2010593

Thermal immune Ni germanide for high performance Ge MOSFETs on Ge-on- Si substrate utilizing Ni0.95Pd0.05 alloy. / Zhang, Ying Ying; Oh, Jungwoo; Han, In Shik; Zhong, Zhun; Li, Shi Guang; Jung, Soon Yen; Park, Kee Young; Shin, Hong Sik; Choi, Won Ho; Kwon, Hyuk Min; Loh, Wei Yip; Majhi, Prashant; Jammy, Raj; Lee, Hi Deok.

In: IEEE Transactions on Electron Devices, Vol. 56, No. 2, 15.01.2009, p. 348-353.

Research output: Contribution to journalArticle

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AU - Zhang, Ying Ying

AU - Oh, Jungwoo

AU - Han, In Shik

AU - Zhong, Zhun

AU - Li, Shi Guang

AU - Jung, Soon Yen

AU - Park, Kee Young

AU - Shin, Hong Sik

AU - Choi, Won Ho

AU - Kwon, Hyuk Min

AU - Loh, Wei Yip

AU - Majhi, Prashant

AU - Jammy, Raj

AU - Lee, Hi Deok

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AB - Highly thermally stable Ni germanide technology for high performance germanium metal-oxide-semiconductor field-effect transistors (Ge MOSFETs) is proposed, utilizing Pd incorporation into Ni germanide. The proposed Ni germanide shows not only the improvement of thermal stability but also the reduction of hole barrier height, which can improve the device on-current by reducing the Ni germanide to p+ source/ drain contact resistance. The proposed Ni germanide showed a stable sheet resistance of up to 500 °C 30-min postgermanidation annealing due to the suppression of agglomeration and oxidation of Ni germanide and the diffusion of Ni and Ge atoms by the incorporated Pd. Therefore, the proposed Ni0.95 Pd0.05 alloy could be promising for the high mobility Ge MOSFET applications.

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