Thermal immune Ni germanide for high performance Ge MOSFETs on Ge-on- Si substrate utilizing Ni0.95Pd0.05 alloy

Ying Ying Zhang, Jungwoo Oh, In Shik Han, Zhun Zhong, Shi Guang Li, Soon Yen Jung, Kee Young Park, Hong Sik Shin, Won Ho Choi, Hyuk Min Kwon, Wei Yip Loh, Prashant Majhi, Raj Jammy, Hi Deok Lee

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Abstract

Highly thermally stable Ni germanide technology for high performance germanium metal-oxide-semiconductor field-effect transistors (Ge MOSFETs) is proposed, utilizing Pd incorporation into Ni germanide. The proposed Ni germanide shows not only the improvement of thermal stability but also the reduction of hole barrier height, which can improve the device on-current by reducing the Ni germanide to p+ source/ drain contact resistance. The proposed Ni germanide showed a stable sheet resistance of up to 500 °C 30-min postgermanidation annealing due to the suppression of agglomeration and oxidation of Ni germanide and the diffusion of Ni and Ge atoms by the incorporated Pd. Therefore, the proposed Ni0.95 Pd0.05 alloy could be promising for the high mobility Ge MOSFET applications.

Original languageEnglish
Pages (from-to)348-353
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume56
Issue number2
DOIs
Publication statusPublished - 2009 Jan 15

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Zhang, Y. Y., Oh, J., Han, I. S., Zhong, Z., Li, S. G., Jung, S. Y., Park, K. Y., Shin, H. S., Choi, W. H., Kwon, H. M., Loh, W. Y., Majhi, P., Jammy, R., & Lee, H. D. (2009). Thermal immune Ni germanide for high performance Ge MOSFETs on Ge-on- Si substrate utilizing Ni0.95Pd0.05 alloy. IEEE Transactions on Electron Devices, 56(2), 348-353. https://doi.org/10.1109/TED.2008.2010593