Highly thermally stable Ni germanide technology for high performance germanium metal-oxide-semiconductor field-effect transistors (Ge MOSFETs) is proposed, utilizing Pd incorporation into Ni germanide. The proposed Ni germanide shows not only the improvement of thermal stability but also the reduction of hole barrier height, which can improve the device on-current by reducing the Ni germanide to p+ source/ drain contact resistance. The proposed Ni germanide showed a stable sheet resistance of up to 500 °C 30-min postgermanidation annealing due to the suppression of agglomeration and oxidation of Ni germanide and the diffusion of Ni and Ge atoms by the incorporated Pd. Therefore, the proposed Ni0.95 Pd0.05 alloy could be promising for the high mobility Ge MOSFET applications.
Bibliographical noteFunding Information:
Manuscript received June 18, 2008; revised November 4, 2008. Current version published January 28, 2009. This work was supported in part by Korea Research Foundation under Grant KRF-2007-521-D00288. The review of this brief was arranged by Editor M. J. Kumar. Y.-Y. Zhang, I.-S. Han, Z. Zhong, S.-G. Li, S.-Y. Jung, K.-Y. Park, H.-S. Shin, W.-H. Choi, H.-M. Kwon, and H.-D. Lee are with the Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea (e-mail: email@example.com). J. Oh, W.-Y. Loh and R. Jammy are with SEMATECH, Austin, TX 78741 USA. P. Majhi is an Intel Assignee to the SEMATECH, Austin, TX 78741 USA. Color versions of one or more of the figures in this brief are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TED.2008.2010593
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering