Abstract
We studied the thermal stability of HfO 2 on an InP structure when an Al 2O 3 interface passivation layer (PL) was introduced. In contrast to the thick (~4 nm) Al 2O 3-PL, an almost complete disappearance of the thin (~1 nm) Al 2O 3-PL was observed after a post-deposition anneal at 600 °C. Based on various chemical and electrical analyses, this was attributed to the intermixing of the thin Al 2O 3-PL with HfO 2, which might have been accompanied by the out-diffusion of a substantial amount of substrate elements.
Original language | English |
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Pages (from-to) | 247-249 |
Number of pages | 3 |
Journal | Physica Status Solidi - Rapid Research Letters |
Volume | 6 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2012 Jun |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics