Thermal instability of HfO 2 on InP structure with ultrathin Al 2O 3 interface passivation layer

Chee Hong An; Young Chul Byun; Mann Ho Cho; Hyoungsub Kim

doi:10.1002/pssr.201206178

Thermal instability of HfO ₂ on InP structure with ultrathin Al ₂O ₃ interface passivation layer

Chee Hong An, Young Chul Byun, Mann Ho Cho, Hyoungsub Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We studied the thermal stability of HfO ₂ on an InP structure when an Al ₂O ₃ interface passivation layer (PL) was introduced. In contrast to the thick (~4 nm) Al ₂O ₃-PL, an almost complete disappearance of the thin (~1 nm) Al ₂O ₃-PL was observed after a post-deposition anneal at 600 °C. Based on various chemical and electrical analyses, this was attributed to the intermixing of the thin Al ₂O ₃-PL with HfO ₂, which might have been accompanied by the out-diffusion of a substantial amount of substrate elements.

Original language	English
Pages (from-to)	247-249
Number of pages	3
Journal	Physica Status Solidi - Rapid Research Letters
Volume	6
Issue number	6
DOIs	https://doi.org/10.1002/pssr.201206178
Publication status	Published - 2012 Jun

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics

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title = "Thermal instability of HfO 2 on InP structure with ultrathin Al 2O 3 interface passivation layer",

abstract = "We studied the thermal stability of HfO 2 on an InP structure when an Al 2O 3 interface passivation layer (PL) was introduced. In contrast to the thick (~4 nm) Al 2O 3-PL, an almost complete disappearance of the thin (~1 nm) Al 2O 3-PL was observed after a post-deposition anneal at 600 °C. Based on various chemical and electrical analyses, this was attributed to the intermixing of the thin Al 2O 3-PL with HfO 2, which might have been accompanied by the out-diffusion of a substantial amount of substrate elements.",

author = "An, {Chee Hong} and Byun, {Young Chul} and Cho, {Mann Ho} and Hyoungsub Kim",

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T1 - Thermal instability of HfO 2 on InP structure with ultrathin Al 2O 3 interface passivation layer

AU - An, Chee Hong

AU - Byun, Young Chul

AU - Cho, Mann Ho

AU - Kim, Hyoungsub

PY - 2012/6

Y1 - 2012/6

N2 - We studied the thermal stability of HfO 2 on an InP structure when an Al 2O 3 interface passivation layer (PL) was introduced. In contrast to the thick (~4 nm) Al 2O 3-PL, an almost complete disappearance of the thin (~1 nm) Al 2O 3-PL was observed after a post-deposition anneal at 600 °C. Based on various chemical and electrical analyses, this was attributed to the intermixing of the thin Al 2O 3-PL with HfO 2, which might have been accompanied by the out-diffusion of a substantial amount of substrate elements.

AB - We studied the thermal stability of HfO 2 on an InP structure when an Al 2O 3 interface passivation layer (PL) was introduced. In contrast to the thick (~4 nm) Al 2O 3-PL, an almost complete disappearance of the thin (~1 nm) Al 2O 3-PL was observed after a post-deposition anneal at 600 °C. Based on various chemical and electrical analyses, this was attributed to the intermixing of the thin Al 2O 3-PL with HfO 2, which might have been accompanied by the out-diffusion of a substantial amount of substrate elements.

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