TY - JOUR
T1 - Thermal instability of HfO 2 on InP structure with ultrathin Al 2O 3 interface passivation layer
AU - An, Chee Hong
AU - Byun, Young Chul
AU - Cho, Mann Ho
AU - Kim, Hyoungsub
PY - 2012/6
Y1 - 2012/6
N2 - We studied the thermal stability of HfO 2 on an InP structure when an Al 2O 3 interface passivation layer (PL) was introduced. In contrast to the thick (~4 nm) Al 2O 3-PL, an almost complete disappearance of the thin (~1 nm) Al 2O 3-PL was observed after a post-deposition anneal at 600 °C. Based on various chemical and electrical analyses, this was attributed to the intermixing of the thin Al 2O 3-PL with HfO 2, which might have been accompanied by the out-diffusion of a substantial amount of substrate elements.
AB - We studied the thermal stability of HfO 2 on an InP structure when an Al 2O 3 interface passivation layer (PL) was introduced. In contrast to the thick (~4 nm) Al 2O 3-PL, an almost complete disappearance of the thin (~1 nm) Al 2O 3-PL was observed after a post-deposition anneal at 600 °C. Based on various chemical and electrical analyses, this was attributed to the intermixing of the thin Al 2O 3-PL with HfO 2, which might have been accompanied by the out-diffusion of a substantial amount of substrate elements.
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U2 - 10.1002/pssr.201206178
DO - 10.1002/pssr.201206178
M3 - Article
AN - SCOPUS:84862250896
VL - 6
SP - 247
EP - 249
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
SN - 1862-6254
IS - 6
ER -