Thermal instability of HfO 2 on InP structure with ultrathin Al 2O 3 interface passivation layer

Chee Hong An, Young Chul Byun, Mann Ho Cho, Hyoungsub Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We studied the thermal stability of HfO 2 on an InP structure when an Al 2O 3 interface passivation layer (PL) was introduced. In contrast to the thick (~4 nm) Al 2O 3-PL, an almost complete disappearance of the thin (~1 nm) Al 2O 3-PL was observed after a post-deposition anneal at 600 °C. Based on various chemical and electrical analyses, this was attributed to the intermixing of the thin Al 2O 3-PL with HfO 2, which might have been accompanied by the out-diffusion of a substantial amount of substrate elements.

Original languageEnglish
Pages (from-to)247-249
Number of pages3
JournalPhysica Status Solidi - Rapid Research Letters
Volume6
Issue number6
DOIs
Publication statusPublished - 2012 Jun 1

Fingerprint

thermal instability
Passivation
passivity
Thermodynamic stability
thermal stability
Hot Temperature
Substrates

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

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Thermal instability of HfO 2 on InP structure with ultrathin Al 2O 3 interface passivation layer. / An, Chee Hong; Byun, Young Chul; Cho, Mann Ho; Kim, Hyoungsub.

In: Physica Status Solidi - Rapid Research Letters, Vol. 6, No. 6, 01.06.2012, p. 247-249.

Research output: Contribution to journalArticle

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