Thermal instability of HfO 2 on InP structure with ultrathin Al 2O 3 interface passivation layer

Chee Hong An, Young Chul Byun, Mann Ho Cho, Hyoungsub Kim

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4 Citations (Scopus)


We studied the thermal stability of HfO 2 on an InP structure when an Al 2O 3 interface passivation layer (PL) was introduced. In contrast to the thick (~4 nm) Al 2O 3-PL, an almost complete disappearance of the thin (~1 nm) Al 2O 3-PL was observed after a post-deposition anneal at 600 °C. Based on various chemical and electrical analyses, this was attributed to the intermixing of the thin Al 2O 3-PL with HfO 2, which might have been accompanied by the out-diffusion of a substantial amount of substrate elements.

Original languageEnglish
Pages (from-to)247-249
Number of pages3
JournalPhysica Status Solidi - Rapid Research Letters
Issue number6
Publication statusPublished - 2012 Jun

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics


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