Abstract
We studied the thermal stability of HfO 2 on an InP structure when an Al 2O 3 interface passivation layer (PL) was introduced. In contrast to the thick (~4 nm) Al 2O 3-PL, an almost complete disappearance of the thin (~1 nm) Al 2O 3-PL was observed after a post-deposition anneal at 600 °C. Based on various chemical and electrical analyses, this was attributed to the intermixing of the thin Al 2O 3-PL with HfO 2, which might have been accompanied by the out-diffusion of a substantial amount of substrate elements.
| Original language | English |
|---|---|
| Pages (from-to) | 247-249 |
| Number of pages | 3 |
| Journal | Physica Status Solidi - Rapid Research Letters |
| Volume | 6 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2012 Jun 1 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
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An, C. H., Byun, Y. C., Cho, M. H., & Kim, H. (2012). Thermal instability of HfO 2 on InP structure with ultrathin Al 2O 3 interface passivation layer. Physica Status Solidi - Rapid Research Letters, 6(6), 247-249. https://doi.org/10.1002/pssr.201206178