Abstract
We studied the thermal stability of HfO 2 on an InP structure when an Al 2O 3 interface passivation layer (PL) was introduced. In contrast to the thick (~4 nm) Al 2O 3-PL, an almost complete disappearance of the thin (~1 nm) Al 2O 3-PL was observed after a post-deposition anneal at 600 °C. Based on various chemical and electrical analyses, this was attributed to the intermixing of the thin Al 2O 3-PL with HfO 2, which might have been accompanied by the out-diffusion of a substantial amount of substrate elements.
| Original language | English |
|---|---|
| Pages (from-to) | 247-249 |
| Number of pages | 3 |
| Journal | Physica Status Solidi - Rapid Research Letters |
| Volume | 6 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2012 Jun 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
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Thermal instability of HfO 2 on InP structure with ultrathin Al 2O 3 interface passivation layer. / An, Chee Hong; Byun, Young Chul; Cho, Mann Ho; Kim, Hyoungsub.
In: Physica Status Solidi - Rapid Research Letters, Vol. 6, No. 6, 01.06.2012, p. 247-249.Research output: Contribution to journal › Article
TY - JOUR
T1 - Thermal instability of HfO 2 on InP structure with ultrathin Al 2O 3 interface passivation layer
AU - An, Chee Hong
AU - Byun, Young Chul
AU - Cho, Mann Ho
AU - Kim, Hyoungsub
PY - 2012/6/1
Y1 - 2012/6/1
N2 - We studied the thermal stability of HfO 2 on an InP structure when an Al 2O 3 interface passivation layer (PL) was introduced. In contrast to the thick (~4 nm) Al 2O 3-PL, an almost complete disappearance of the thin (~1 nm) Al 2O 3-PL was observed after a post-deposition anneal at 600 °C. Based on various chemical and electrical analyses, this was attributed to the intermixing of the thin Al 2O 3-PL with HfO 2, which might have been accompanied by the out-diffusion of a substantial amount of substrate elements.
AB - We studied the thermal stability of HfO 2 on an InP structure when an Al 2O 3 interface passivation layer (PL) was introduced. In contrast to the thick (~4 nm) Al 2O 3-PL, an almost complete disappearance of the thin (~1 nm) Al 2O 3-PL was observed after a post-deposition anneal at 600 °C. Based on various chemical and electrical analyses, this was attributed to the intermixing of the thin Al 2O 3-PL with HfO 2, which might have been accompanied by the out-diffusion of a substantial amount of substrate elements.
UR - http://www.scopus.com/inward/record.url?scp=84862250896&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84862250896&partnerID=8YFLogxK
U2 - 10.1002/pssr.201206178
DO - 10.1002/pssr.201206178
M3 - Article
AN - SCOPUS:84862250896
VL - 6
SP - 247
EP - 249
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
SN - 1862-6254
IS - 6
ER -