We investigated thermal behavior of GaN-based laser diode (LD) packages as a function of cooling systems, die attaching materials, chip loading conditions, and optical performances. The electrical thermal transient technique was employed for the thermal measurement of junction temperature and thermal resistance of LD packages. The results demonstrate that the total thermal resistance of LD packages is controlled mainly by the packaging design rather than the chip structure itself. Significant changes in thermal resistance with input current were observed under a natural cooling system because of the sensitive change in the heat transfer coefficient with the change in temperature. Employment of PbSn as a die attachment was more advantageous over the Ag-paste in the thermal behavior of LD packages. The LD package with epi-down structure resulted in the lower thermal resistance compared to one with epi-up structure. A continuous increase in junction temperature was measured after lasing. It was attributed to an increase in the thermal resistance of LD when it took the optical power into an account. Effective input power was decreased by the lasing and led to high thermal resistance values.
|Number of pages||6|
|Journal||IEEE Transactions on Components and Packaging Technologies|
|Publication status||Published - 2007 Dec|
Bibliographical noteFunding Information:
Manuscript received January 20, 2006; revised April 9, 2007. This work was supported by the Samsung Advanced Institute of Technology and the Korean Institute of Industrial Technology Evaluation and Planning. This work was recommended for publication by Associate Editor C. C. Lee upon evaluation of the reviewers comments. W. J. Hwang is with Seoul Semiconductor Company, Seoul 153-801, Korea. T. H. Lee is with Epivalley Company, Ltd., Gyunggi-Do 464-890, Korea. J. H. Choi and M. W. Shin are with the Department of Materials Science and Engineering, Myongji University, Gyunggi-Do 449-728, Korea (e-mail: firstname.lastname@example.org). H. K. Kim and Y. J. Park are with the Samsung Advanced Institute Of Technology, Suwon 440-600, Korea. O. H. Nam is with the Department of Nano-Optical Engineering, Korea Polytechnic University, Seoul 135–940, Korea. Digital Object Identifier 10.1109/TCAPT.2007.906346
While in graduate school, he held a research as-sistantship and also worked at the Microelectronics Center of North Carolina, Research Triangle Park (via financial support from the BOC Group, Inc.).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering