Thermal modeling and measurement of GaN-based HFET devices

Jeong Park; Moo Whan Shin; Chin C. Lee

doi:10.1109/LED.2003.814020

Thermal modeling and measurement of GaN-based HFET devices

Jeong Park, Moo Whan Shin, Chin C. Lee

School of Integrated Technology

Research output: Contribution to journal › Letter › peer-review

50 Citations (Scopus)

Abstract

In this letter, we present our thermal study results of GaN-based heterojunction field effect transistors (HFETs). In thermal computation, PAMICE code was used to calculate temperatures in a three-dimension (3-D) model. In the rmal measurement, nematic liquid crystal thermography was employed to determine the peak temperature on the surface of the device chip. The calculated and directly measured temperatures agree well. These methods are valuable in predicting the thermal performance of GaN-based HFET devices, in particular the power devices.

Original language	English
Pages (from-to)	424-426
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	24
Issue number	7
DOIs	https://doi.org/10.1109/LED.2003.814020
Publication status	Published - 2003 Jul

Bibliographical note

Funding Information:
Manuscript received February 20, 2003; revised April 9, 2003. This work was supported by a Korean Research Foundation Grant KRF-2001-042-E00095. This review of this letter was arranged by Editor D. Ueda. J. Park and C. C. Lee are with the Department of Electrical and Computer Engineering, University of California, Irvine, CA 92697 USA. M. W. Shin is with the Semiconductor Materials/Devices Laboratory, Department of Ceramic Engineering, Myong Ji University, Kyunggi, Korea 449-728. Digital Object Identifier 10.1109/LED.2003.814020

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2003.814020

Cite this

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title = "Thermal modeling and measurement of GaN-based HFET devices",

abstract = "In this letter, we present our thermal study results of GaN-based heterojunction field effect transistors (HFETs). In thermal computation, PAMICE code was used to calculate temperatures in a three-dimension (3-D) model. In the rmal measurement, nematic liquid crystal thermography was employed to determine the peak temperature on the surface of the device chip. The calculated and directly measured temperatures agree well. These methods are valuable in predicting the thermal performance of GaN-based HFET devices, in particular the power devices.",

author = "Jeong Park and Shin, {Moo Whan} and Lee, {Chin C.}",

note = "Funding Information: Manuscript received February 20, 2003; revised April 9, 2003. This work was supported by a Korean Research Foundation Grant KRF-2001-042-E00095. This review of this letter was arranged by Editor D. Ueda. J. Park and C. C. Lee are with the Department of Electrical and Computer Engineering, University of California, Irvine, CA 92697 USA. M. W. Shin is with the Semiconductor Materials/Devices Laboratory, Department of Ceramic Engineering, Myong Ji University, Kyunggi, Korea 449-728. Digital Object Identifier 10.1109/LED.2003.814020",

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N1 - Funding Information: Manuscript received February 20, 2003; revised April 9, 2003. This work was supported by a Korean Research Foundation Grant KRF-2001-042-E00095. This review of this letter was arranged by Editor D. Ueda. J. Park and C. C. Lee are with the Department of Electrical and Computer Engineering, University of California, Irvine, CA 92697 USA. M. W. Shin is with the Semiconductor Materials/Devices Laboratory, Department of Ceramic Engineering, Myong Ji University, Kyunggi, Korea 449-728. Digital Object Identifier 10.1109/LED.2003.814020

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AB - In this letter, we present our thermal study results of GaN-based heterojunction field effect transistors (HFETs). In thermal computation, PAMICE code was used to calculate temperatures in a three-dimension (3-D) model. In the rmal measurement, nematic liquid crystal thermography was employed to determine the peak temperature on the surface of the device chip. The calculated and directly measured temperatures agree well. These methods are valuable in predicting the thermal performance of GaN-based HFET devices, in particular the power devices.

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Thermal modeling and measurement of GaN-based HFET devices

Abstract

Bibliographical note

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