Thermal modeling and measurement of GaN-based HFET devices

Jeong Park, Moo Whan Shin, Chin C. Lee

Research output: Contribution to journalLetter

44 Citations (Scopus)

Abstract

In this letter, we present our thermal study results of GaN-based heterojunction field effect transistors (HFETs). In thermal computation, PAMICE code was used to calculate temperatures in a three-dimension (3-D) model. In the rmal measurement, nematic liquid crystal thermography was employed to determine the peak temperature on the surface of the device chip. The calculated and directly measured temperatures agree well. These methods are valuable in predicting the thermal performance of GaN-based HFET devices, in particular the power devices.

Original languageEnglish
Pages (from-to)424-426
Number of pages3
JournalIEEE Electron Device Letters
Volume24
Issue number7
DOIs
Publication statusPublished - 2003 Jul 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Thermal modeling and measurement of GaN-based HFET devices'. Together they form a unique fingerprint.

  • Cite this