Thermal resistance measurement of LED package with multichips

Lan Kim, Moo Whan Shin

Research output: Contribution to journalArticle

83 Citations (Scopus)


Thermal transient measurements of high power GaN-based light-emitting diodes (LEDs) with multichip designs are presented and discussed in the paper. Once transient cooling curve was obtained, the structure function theory was applied to determine the thermal resistance of packages. The total thermal resistance from junction to ambient considering optical power is 19.87 K/W, 10.78 K/W, 6.77 K/W for the one-chip, two-chip and four-chip packages, respectively. The contribution of each component to the total thermal resistance of the package can be determined from the cumulative structure function and differential structure function. The total thermal resistance of multichip packages is found to decrease with the number of chips due to parallel heat dissipation. However, the effect of the number of chips on thermal resistance of package strongly depends on the ratio of partial thermal resistance of chip and that of slug. Therefore, an important thermal design rule for packaging of high power multichip LEDs has been analogized.

Original languageEnglish
Pages (from-to)632-636
Number of pages5
JournalIEEE Transactions on Components and Packaging Technologies
Issue number4
Publication statusPublished - 2007 Dec

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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