TY - GEN

T1 - Thermal resistance measurement of LEDs with multi-chip packages

AU - Kim, Lan

AU - Shin, Moo Whan

N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2006

Y1 - 2006

N2 - Thermal transient measurements of high power GaN-based LEDs with multi-chip designs are presented and discussed in the paper. Once transient cooling curve was obtained, the structure function theory was applied to determine the thermal resistance of packages. The total thermal resistance from junction to ambient considering optical power is 19.87 K/W, 10.78 K/W, 6.77 K/W for the one-chip, two-chip and four-chip packages, respectively. The contribution of each component to the total thermal resistance of the package can be determined from the cumulative structure function and differential structure function. The total thermal resistance of multi-chip packages is found to decrease with the number of chips due to parallel heat dissipation. Moreover, an important thermal design rule for high power multi-chip LEDs is analogized from the experiments. With the number of chips increasing, the thermal resistance can be decreased, but the impact will be different with the ratio of partial thermal resistance.

AB - Thermal transient measurements of high power GaN-based LEDs with multi-chip designs are presented and discussed in the paper. Once transient cooling curve was obtained, the structure function theory was applied to determine the thermal resistance of packages. The total thermal resistance from junction to ambient considering optical power is 19.87 K/W, 10.78 K/W, 6.77 K/W for the one-chip, two-chip and four-chip packages, respectively. The contribution of each component to the total thermal resistance of the package can be determined from the cumulative structure function and differential structure function. The total thermal resistance of multi-chip packages is found to decrease with the number of chips due to parallel heat dissipation. Moreover, an important thermal design rule for high power multi-chip LEDs is analogized from the experiments. With the number of chips increasing, the thermal resistance can be decreased, but the impact will be different with the ratio of partial thermal resistance.

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M3 - Conference contribution

AN - SCOPUS:33750132692

SN - 1424401534

SN - 9781424401536

T3 - Annual IEEE Semiconductor Thermal Measurement and Management Symposium

SP - 186

EP - 190

BT - Twenty-Second Annual IEEE Semiconductor Thermal Measurement And Management Symposium, SEMI-THERM 2006

T2 - 22nd Annual IEEE Semiconductor Thermal Measurement and Management, SEMI-THERM 2006

Y2 - 14 March 2006 through 16 March 2006

ER -