Thermal stability and decomposition of the HfO2Al 2O3 laminate system

Hyo Sik Chang, Hyunsang Hwang, Mann Ho Cho, Dae Won Moon, Seok Joo Doh, Jong Ho Lee, Nae In Lee

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Abstract

Thermal decomposition of HfO2-Al2O3 nanolaminate film was discussed. The laminate stack was grown by atomic layer chemical vapor deposition and was studied by medium-energy ion scattering spectroscopy and high-resolution X-ray photoelectron spectroscopy. The experiments were performed in the ultrahigh vacuum conditions and at a temperature level of 800°C. It was found that at 850°C the quality of Hf-Al oxides was degraded and caused silicide to form on the surface.

Original languageEnglish
Pages (from-to)28-30
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number1
DOIs
Publication statusPublished - 2004 Jan 5

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Chang, H. S., Hwang, H., Cho, M. H., Moon, D. W., Doh, S. J., Lee, J. H., & Lee, N. I. (2004). Thermal stability and decomposition of the HfO2Al 2O3 laminate system. Applied Physics Letters, 84(1), 28-30. https://doi.org/10.1063/1.1637955