Thermal stability improvement of Ni germanide utilizing Ni-Pd alloy for nano-scale Ge MOSFETs

Ying Ying Zhang, Zhun Zhong, Shi Guang Li, Soon Yen Jung, Kee Young Park, Ga Won Lee, Jin Suk Wang, Jung Woo Oh, Prashant Majhi, Hsing Huang Tseng, Hi Deok Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The thermal stability of Ni germanide utilizing pure Ni and Ni-Pd alloy on Ge-on-Si substrate was studied. The proposed Ni-Pd alloy shows the highly thermal immune Ni germandie due to reduced oxidation and retarded Ni and Ge diffusion. Therefore, the Ni-Pd alloy could be promising for the high mobility Ge MOSFET applications.

Original languageEnglish
Title of host publicationIWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology
Pages158-161
Number of pages4
DOIs
Publication statusPublished - 2008 Sep 8
EventIWJT-2008 - International Workshop on Junction Technology - Shanghai, China
Duration: 2008 May 152008 May 16

Publication series

NameIWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology

Other

OtherIWJT-2008 - International Workshop on Junction Technology
CountryChina
CityShanghai
Period08/5/1508/5/16

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Zhang, Y. Y., Zhong, Z., Li, S. G., Jung, S. Y., Park, K. Y., Lee, G. W., Wang, J. S., Oh, J. W., Majhi, P., Tseng, H. H., & Lee, H. D. (2008). Thermal stability improvement of Ni germanide utilizing Ni-Pd alloy for nano-scale Ge MOSFETs. In IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology (pp. 158-161). [4540039] (IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology). https://doi.org/10.1109/IWJT.2008.4540039