Thermal stability improvement of Ni germanide utilizing Ni-Pd alloy for nano-scale Ge MOSFETs

Ying Ying Zhang, Zhun Zhong, Shi Guang Li, Soon Yen Jung, Kee Young Park, Ga Won Lee, Jin Suk Wang, Jungwoo Oh, Prashant Majhi, Hsing Huang Tseng, Hi Deok Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The thermal stability of Ni germanide utilizing pure Ni and Ni-Pd alloy on Ge-on-Si substrate was studied. The proposed Ni-Pd alloy shows the highly thermal immune Ni germandie due to reduced oxidation and retarded Ni and Ge diffusion. Therefore, the Ni-Pd alloy could be promising for the high mobility Ge MOSFET applications.

Original languageEnglish
Title of host publicationIWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology
Pages158-161
Number of pages4
DOIs
Publication statusPublished - 2008 Sep 8
EventIWJT-2008 - International Workshop on Junction Technology - Shanghai, China
Duration: 2008 May 152008 May 16

Other

OtherIWJT-2008 - International Workshop on Junction Technology
CountryChina
CityShanghai
Period08/5/1508/5/16

Fingerprint

Thermodynamic stability
Oxidation
Substrates
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Zhang, Y. Y., Zhong, Z., Li, S. G., Jung, S. Y., Park, K. Y., Lee, G. W., ... Lee, H. D. (2008). Thermal stability improvement of Ni germanide utilizing Ni-Pd alloy for nano-scale Ge MOSFETs. In IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology (pp. 158-161). [4540039] https://doi.org/10.1109/IWJT.2008.4540039
Zhang, Ying Ying ; Zhong, Zhun ; Li, Shi Guang ; Jung, Soon Yen ; Park, Kee Young ; Lee, Ga Won ; Wang, Jin Suk ; Oh, Jungwoo ; Majhi, Prashant ; Tseng, Hsing Huang ; Lee, Hi Deok. / Thermal stability improvement of Ni germanide utilizing Ni-Pd alloy for nano-scale Ge MOSFETs. IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology. 2008. pp. 158-161
@inproceedings{b137f6ef33c84e83abdbdc996ea9108e,
title = "Thermal stability improvement of Ni germanide utilizing Ni-Pd alloy for nano-scale Ge MOSFETs",
abstract = "The thermal stability of Ni germanide utilizing pure Ni and Ni-Pd alloy on Ge-on-Si substrate was studied. The proposed Ni-Pd alloy shows the highly thermal immune Ni germandie due to reduced oxidation and retarded Ni and Ge diffusion. Therefore, the Ni-Pd alloy could be promising for the high mobility Ge MOSFET applications.",
author = "Zhang, {Ying Ying} and Zhun Zhong and Li, {Shi Guang} and Jung, {Soon Yen} and Park, {Kee Young} and Lee, {Ga Won} and Wang, {Jin Suk} and Jungwoo Oh and Prashant Majhi and Tseng, {Hsing Huang} and Lee, {Hi Deok}",
year = "2008",
month = "9",
day = "8",
doi = "10.1109/IWJT.2008.4540039",
language = "English",
isbn = "9781424417384",
pages = "158--161",
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}

Zhang, YY, Zhong, Z, Li, SG, Jung, SY, Park, KY, Lee, GW, Wang, JS, Oh, J, Majhi, P, Tseng, HH & Lee, HD 2008, Thermal stability improvement of Ni germanide utilizing Ni-Pd alloy for nano-scale Ge MOSFETs. in IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology., 4540039, pp. 158-161, IWJT-2008 - International Workshop on Junction Technology, Shanghai, China, 08/5/15. https://doi.org/10.1109/IWJT.2008.4540039

Thermal stability improvement of Ni germanide utilizing Ni-Pd alloy for nano-scale Ge MOSFETs. / Zhang, Ying Ying; Zhong, Zhun; Li, Shi Guang; Jung, Soon Yen; Park, Kee Young; Lee, Ga Won; Wang, Jin Suk; Oh, Jungwoo; Majhi, Prashant; Tseng, Hsing Huang; Lee, Hi Deok.

IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology. 2008. p. 158-161 4540039.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Thermal stability improvement of Ni germanide utilizing Ni-Pd alloy for nano-scale Ge MOSFETs

AU - Zhang, Ying Ying

AU - Zhong, Zhun

AU - Li, Shi Guang

AU - Jung, Soon Yen

AU - Park, Kee Young

AU - Lee, Ga Won

AU - Wang, Jin Suk

AU - Oh, Jungwoo

AU - Majhi, Prashant

AU - Tseng, Hsing Huang

AU - Lee, Hi Deok

PY - 2008/9/8

Y1 - 2008/9/8

N2 - The thermal stability of Ni germanide utilizing pure Ni and Ni-Pd alloy on Ge-on-Si substrate was studied. The proposed Ni-Pd alloy shows the highly thermal immune Ni germandie due to reduced oxidation and retarded Ni and Ge diffusion. Therefore, the Ni-Pd alloy could be promising for the high mobility Ge MOSFET applications.

AB - The thermal stability of Ni germanide utilizing pure Ni and Ni-Pd alloy on Ge-on-Si substrate was studied. The proposed Ni-Pd alloy shows the highly thermal immune Ni germandie due to reduced oxidation and retarded Ni and Ge diffusion. Therefore, the Ni-Pd alloy could be promising for the high mobility Ge MOSFET applications.

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U2 - 10.1109/IWJT.2008.4540039

DO - 10.1109/IWJT.2008.4540039

M3 - Conference contribution

SN - 9781424417384

SP - 158

EP - 161

BT - IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology

ER -

Zhang YY, Zhong Z, Li SG, Jung SY, Park KY, Lee GW et al. Thermal stability improvement of Ni germanide utilizing Ni-Pd alloy for nano-scale Ge MOSFETs. In IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology. 2008. p. 158-161. 4540039 https://doi.org/10.1109/IWJT.2008.4540039