Thermal stability of Al- and Zr-doped HfO2 thin films grown by direct current magnetron sputtering

Yeong Eui Hong, Yong Seok Kim, Kihoon Do, Dongwon Lee, Dae Hong Ko, Ja Hum Ku, Hyoungsub Kim

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Ultrathin HfO2 dielectric films doped with Al and Zr were grown on p -type Si(100) substrates by dc magnetron sputtering, and their microstructural and electrical properties were examined. Compositions and chemical states of the dielectric films were analyzed by Rutherford backscattering spectrometry and x-ray photoelectron spectroscopy. The HfO2 films doped with Zr were crystallized even from the as-deposited state, however, the crystallization temperature of the HfO2 film doped with 16% Al2O3 was delayed up to 900 °C. As the annealing temperature increases, high-resolution transmission electron microscopy analyses of all doped HfO2 films showed an increase of the interfacial layer thickness due to the diffusion of small partial pressure of oxygen in annealing ambient. Our results also showed that the addition of Al2O3 to 14% is not useful for blocking the oxygen diffusion through the (HfO2) 0.86 (Al2 O3) 0.14 film. From the capacitance-voltage measurements, the dielectric constants of the Al- and Zr-doped HfO2 thin films were measured to be 18.7 and 7.6, respectively.

Original languageEnglish
Pages (from-to)1413-1418
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume23
Issue number5
DOIs
Publication statusPublished - 2005 Sep

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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