Thermal stability of ALD-HfO 2GaAs pretreated with trimethylaluminium

Young Chul Byun; Chee Hong An; Seok Hee Lee; Mann Ho Cho; Hyoungsub Kim

doi:10.1149/2.052201jes

Thermal stability of ALD-HfO ₂GaAs pretreated with trimethylaluminium

Young Chul Byun, Chee Hong An, Seok Hee Lee, Mann Ho Cho, Hyoungsub Kim

Department of Physics

Research output: Contribution to journal › Article

9 Citations (Scopus)

Abstract

The simultaneous self-cleaning and passivation of an as-received GaAs substrate using trimethylaluminium (TMA) pretreatment before the atomic layer deposition (ALD) of HfO ₂ was systematically investigated. The change of the interfacial characteristics was probed as a function of the number of treatment cycles and the post-deposition annealing temperature and related with various electrical properties of the HfO ₂ film. The TMA pretreatment removed the Ga- and As-oxides more effectively than the ALD-HfO ₂ process, which reduced the amount of frequency dispersion. In addition, compared to the As case, it showed more predominant suppression of both Ga out-diffusion and Ga-O bond formation, which is believed to have delayed the thermal degradation of the capacitance equivalent thickness (CET). The optimal number of TMA treatment exhibited the best thermal stability without increasing the as-deposited CET.

Original language	English
Pages (from-to)	G6-G10
Journal	Journal of the Electrochemical Society
Volume	159
Issue number	1
DOIs	https://doi.org/10.1149/2.052201jes
Publication status	Published - 2012 Feb 29

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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Byun, Y. C., An, C. H., Lee, S. H., Cho, M. H., & Kim, H. (2012). Thermal stability of ALD-HfO ₂GaAs pretreated with trimethylaluminium. Journal of the Electrochemical Society, 159(1), G6-G10. https://doi.org/10.1149/2.052201jes

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abstract = "The simultaneous self-cleaning and passivation of an as-received GaAs substrate using trimethylaluminium (TMA) pretreatment before the atomic layer deposition (ALD) of HfO 2 was systematically investigated. The change of the interfacial characteristics was probed as a function of the number of treatment cycles and the post-deposition annealing temperature and related with various electrical properties of the HfO 2 film. The TMA pretreatment removed the Ga- and As-oxides more effectively than the ALD-HfO 2 process, which reduced the amount of frequency dispersion. In addition, compared to the As case, it showed more predominant suppression of both Ga out-diffusion and Ga-O bond formation, which is believed to have delayed the thermal degradation of the capacitance equivalent thickness (CET). The optimal number of TMA treatment exhibited the best thermal stability without increasing the as-deposited CET.",

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