Thermal stability of Cu films on TiN/Ti/Si(100) by partially ionized beam deposition

H. G. Jang, K. H. Kim, D. J. Choi, S. Han, S. C. Choi, W. K. Choi, H. J. Jung, S. K. Koh

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Cu thin films with a thickness around 850 angstrom were prepared on Ti45N55/Ti/Si(100) substrates at room temperature by partially ionized beam deposition (PIBD) with an ion energy of 3 keV at pressure of 8×10-7-1×10-6 Torr. The Cu/Ti45N55/Ti/Si samples were annealed at 8×10-6-1×10-5 Torr with annealing temperature of 500 to 700°C for 30 min. Thermal stability of the PIB-Cu films was investigated with Rutherford backscattering spectrometry (RBS), Auger electron spectroscopy (AES), Scanning electron microscopy (SEM), and X-ray diffraction (XRD). The as deposited Cu films has a (111) texture and there was no change of phase in annealed Cu films regardless of annealing temperature. Grain size of the annealed Cu films increased with annealing temperature. SEM studies show no hillock and no voiding on the Cu film surface up to annealing temperature of 700°C. For PIB-Cu/Ti45N55/Ti/Si samples, all the layers were intact and there was no indication of interdiffusion by conventional depth profiling techniques (RBS, AES) up to 700°C in vacuum for 30 minutes.

Original languageEnglish
Pages (from-to)387-392
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume438
Publication statusPublished - 1996 Dec 1

Fingerprint

Thermodynamic stability
thermal stability
Annealing
annealing
Rutherford backscattering spectroscopy
Auger electron spectroscopy
Spectrometry
Auger spectroscopy
electron spectroscopy
backscattering
Temperature
Scanning electron microscopy
scanning electron microscopy
temperature
Depth profiling
spectroscopy
indication
textures
Textures
grain size

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Jang, H. G., Kim, K. H., Choi, D. J., Han, S., Choi, S. C., Choi, W. K., ... Koh, S. K. (1996). Thermal stability of Cu films on TiN/Ti/Si(100) by partially ionized beam deposition. Materials Research Society Symposium - Proceedings, 438, 387-392.
Jang, H. G. ; Kim, K. H. ; Choi, D. J. ; Han, S. ; Choi, S. C. ; Choi, W. K. ; Jung, H. J. ; Koh, S. K. / Thermal stability of Cu films on TiN/Ti/Si(100) by partially ionized beam deposition. In: Materials Research Society Symposium - Proceedings. 1996 ; Vol. 438. pp. 387-392.
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title = "Thermal stability of Cu films on TiN/Ti/Si(100) by partially ionized beam deposition",
abstract = "Cu thin films with a thickness around 850 angstrom were prepared on Ti45N55/Ti/Si(100) substrates at room temperature by partially ionized beam deposition (PIBD) with an ion energy of 3 keV at pressure of 8×10-7-1×10-6 Torr. The Cu/Ti45N55/Ti/Si samples were annealed at 8×10-6-1×10-5 Torr with annealing temperature of 500 to 700°C for 30 min. Thermal stability of the PIB-Cu films was investigated with Rutherford backscattering spectrometry (RBS), Auger electron spectroscopy (AES), Scanning electron microscopy (SEM), and X-ray diffraction (XRD). The as deposited Cu films has a (111) texture and there was no change of phase in annealed Cu films regardless of annealing temperature. Grain size of the annealed Cu films increased with annealing temperature. SEM studies show no hillock and no voiding on the Cu film surface up to annealing temperature of 700°C. For PIB-Cu/Ti45N55/Ti/Si samples, all the layers were intact and there was no indication of interdiffusion by conventional depth profiling techniques (RBS, AES) up to 700°C in vacuum for 30 minutes.",
author = "Jang, {H. G.} and Kim, {K. H.} and Choi, {D. J.} and S. Han and Choi, {S. C.} and Choi, {W. K.} and Jung, {H. J.} and Koh, {S. K.}",
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Jang, HG, Kim, KH, Choi, DJ, Han, S, Choi, SC, Choi, WK, Jung, HJ & Koh, SK 1996, 'Thermal stability of Cu films on TiN/Ti/Si(100) by partially ionized beam deposition', Materials Research Society Symposium - Proceedings, vol. 438, pp. 387-392.

Thermal stability of Cu films on TiN/Ti/Si(100) by partially ionized beam deposition. / Jang, H. G.; Kim, K. H.; Choi, D. J.; Han, S.; Choi, S. C.; Choi, W. K.; Jung, H. J.; Koh, S. K.

In: Materials Research Society Symposium - Proceedings, Vol. 438, 01.12.1996, p. 387-392.

Research output: Contribution to journalConference article

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T1 - Thermal stability of Cu films on TiN/Ti/Si(100) by partially ionized beam deposition

AU - Jang, H. G.

AU - Kim, K. H.

AU - Choi, D. J.

AU - Han, S.

AU - Choi, S. C.

AU - Choi, W. K.

AU - Jung, H. J.

AU - Koh, S. K.

PY - 1996/12/1

Y1 - 1996/12/1

N2 - Cu thin films with a thickness around 850 angstrom were prepared on Ti45N55/Ti/Si(100) substrates at room temperature by partially ionized beam deposition (PIBD) with an ion energy of 3 keV at pressure of 8×10-7-1×10-6 Torr. The Cu/Ti45N55/Ti/Si samples were annealed at 8×10-6-1×10-5 Torr with annealing temperature of 500 to 700°C for 30 min. Thermal stability of the PIB-Cu films was investigated with Rutherford backscattering spectrometry (RBS), Auger electron spectroscopy (AES), Scanning electron microscopy (SEM), and X-ray diffraction (XRD). The as deposited Cu films has a (111) texture and there was no change of phase in annealed Cu films regardless of annealing temperature. Grain size of the annealed Cu films increased with annealing temperature. SEM studies show no hillock and no voiding on the Cu film surface up to annealing temperature of 700°C. For PIB-Cu/Ti45N55/Ti/Si samples, all the layers were intact and there was no indication of interdiffusion by conventional depth profiling techniques (RBS, AES) up to 700°C in vacuum for 30 minutes.

AB - Cu thin films with a thickness around 850 angstrom were prepared on Ti45N55/Ti/Si(100) substrates at room temperature by partially ionized beam deposition (PIBD) with an ion energy of 3 keV at pressure of 8×10-7-1×10-6 Torr. The Cu/Ti45N55/Ti/Si samples were annealed at 8×10-6-1×10-5 Torr with annealing temperature of 500 to 700°C for 30 min. Thermal stability of the PIB-Cu films was investigated with Rutherford backscattering spectrometry (RBS), Auger electron spectroscopy (AES), Scanning electron microscopy (SEM), and X-ray diffraction (XRD). The as deposited Cu films has a (111) texture and there was no change of phase in annealed Cu films regardless of annealing temperature. Grain size of the annealed Cu films increased with annealing temperature. SEM studies show no hillock and no voiding on the Cu film surface up to annealing temperature of 700°C. For PIB-Cu/Ti45N55/Ti/Si samples, all the layers were intact and there was no indication of interdiffusion by conventional depth profiling techniques (RBS, AES) up to 700°C in vacuum for 30 minutes.

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