Thermal stability of metal Ohmic contacts in indium gallium zinc oxide transistors using a graphene barrier layer

Jeong Eun Lee, Bhupendra K. Sharma, Seoung Ki Lee, Haseok Jeon, Byung Hee Hong, Hoo Jeong Lee, Jong Hyun Ahn

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The excellent impermeability of graphene was exploited to produce stable ohmic contact at the interface between Al metal and a semiconducting indium gallium zinc oxide (IGZO) layer after high-temperature annealing. Thin film transistors (TFTs) were fabricated with and without a graphene interlayer between the Al metal and the IGZO channel region. Metal contact at the interface prepared without a graphene interlayer showed serious instabilities in the IGZO TFT under thermal annealing; however, the insertion of a graphene interlayer between the IGZO channel and the Al metal offered good stability under repeated high-temperature annealing cycles and maintained ohmic contact.

Original languageEnglish
Article number113112
JournalApplied Physics Letters
Issue number11
Publication statusPublished - 2013 Mar 18


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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