Abstract
The excellent impermeability of graphene was exploited to produce stable ohmic contact at the interface between Al metal and a semiconducting indium gallium zinc oxide (IGZO) layer after high-temperature annealing. Thin film transistors (TFTs) were fabricated with and without a graphene interlayer between the Al metal and the IGZO channel region. Metal contact at the interface prepared without a graphene interlayer showed serious instabilities in the IGZO TFT under thermal annealing; however, the insertion of a graphene interlayer between the IGZO channel and the Al metal offered good stability under repeated high-temperature annealing cycles and maintained ohmic contact.
| Original language | English |
|---|---|
| Article number | 113112 |
| Journal | Applied Physics Letters |
| Volume | 102 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2013 Mar 18 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Cite this
Eun Lee, J., Sharma, B. K., Lee, S. K., Jeon, H., Hee Hong, B., Lee, H. J., & Ahn, J. H. (2013). Thermal stability of metal Ohmic contacts in indium gallium zinc oxide transistors using a graphene barrier layer. Applied Physics Letters, 102(11), [113112]. https://doi.org/10.1063/1.4796174