Abstract
The excellent impermeability of graphene was exploited to produce stable ohmic contact at the interface between Al metal and a semiconducting indium gallium zinc oxide (IGZO) layer after high-temperature annealing. Thin film transistors (TFTs) were fabricated with and without a graphene interlayer between the Al metal and the IGZO channel region. Metal contact at the interface prepared without a graphene interlayer showed serious instabilities in the IGZO TFT under thermal annealing; however, the insertion of a graphene interlayer between the IGZO channel and the Al metal offered good stability under repeated high-temperature annealing cycles and maintained ohmic contact.
| Original language | English |
|---|---|
| Article number | 113112 |
| Journal | Applied Physics Letters |
| Volume | 102 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2013 Mar 18 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
}
Thermal stability of metal Ohmic contacts in indium gallium zinc oxide transistors using a graphene barrier layer. / Eun Lee, Jeong; Sharma, Bhupendra K.; Lee, Seoung Ki; Jeon, Haseok; Hee Hong, Byung; Lee, Hoo Jeong; Ahn, Jong Hyun.
In: Applied Physics Letters, Vol. 102, No. 11, 113112, 18.03.2013.Research output: Contribution to journal › Article
TY - JOUR
T1 - Thermal stability of metal Ohmic contacts in indium gallium zinc oxide transistors using a graphene barrier layer
AU - Eun Lee, Jeong
AU - Sharma, Bhupendra K.
AU - Lee, Seoung Ki
AU - Jeon, Haseok
AU - Hee Hong, Byung
AU - Lee, Hoo Jeong
AU - Ahn, Jong Hyun
PY - 2013/3/18
Y1 - 2013/3/18
N2 - The excellent impermeability of graphene was exploited to produce stable ohmic contact at the interface between Al metal and a semiconducting indium gallium zinc oxide (IGZO) layer after high-temperature annealing. Thin film transistors (TFTs) were fabricated with and without a graphene interlayer between the Al metal and the IGZO channel region. Metal contact at the interface prepared without a graphene interlayer showed serious instabilities in the IGZO TFT under thermal annealing; however, the insertion of a graphene interlayer between the IGZO channel and the Al metal offered good stability under repeated high-temperature annealing cycles and maintained ohmic contact.
AB - The excellent impermeability of graphene was exploited to produce stable ohmic contact at the interface between Al metal and a semiconducting indium gallium zinc oxide (IGZO) layer after high-temperature annealing. Thin film transistors (TFTs) were fabricated with and without a graphene interlayer between the Al metal and the IGZO channel region. Metal contact at the interface prepared without a graphene interlayer showed serious instabilities in the IGZO TFT under thermal annealing; however, the insertion of a graphene interlayer between the IGZO channel and the Al metal offered good stability under repeated high-temperature annealing cycles and maintained ohmic contact.
UR - http://www.scopus.com/inward/record.url?scp=84875717928&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84875717928&partnerID=8YFLogxK
U2 - 10.1063/1.4796174
DO - 10.1063/1.4796174
M3 - Article
AN - SCOPUS:84875717928
VL - 102
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 11
M1 - 113112
ER -