Thermal stability of metal Ohmic contacts in indium gallium zinc oxide transistors using a graphene barrier layer

Jeong Eun Lee, Bhupendra K. Sharma, Seoung Ki Lee, Haseok Jeon, Byung Hee Hong, Hoo Jeong Lee, Jong Hyun Ahn

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

The excellent impermeability of graphene was exploited to produce stable ohmic contact at the interface between Al metal and a semiconducting indium gallium zinc oxide (IGZO) layer after high-temperature annealing. Thin film transistors (TFTs) were fabricated with and without a graphene interlayer between the Al metal and the IGZO channel region. Metal contact at the interface prepared without a graphene interlayer showed serious instabilities in the IGZO TFT under thermal annealing; however, the insertion of a graphene interlayer between the IGZO channel and the Al metal offered good stability under repeated high-temperature annealing cycles and maintained ohmic contact.

Original languageEnglish
Article number113112
JournalApplied Physics Letters
Volume102
Issue number11
DOIs
Publication statusPublished - 2013 Mar 18

Fingerprint

gallium oxides
barrier layers
zinc oxides
indium
electric contacts
graphene
thermal stability
transistors
interlayers
metals
annealing
thin films
insertion
cycles

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Eun Lee, Jeong ; Sharma, Bhupendra K. ; Lee, Seoung Ki ; Jeon, Haseok ; Hee Hong, Byung ; Lee, Hoo Jeong ; Ahn, Jong Hyun. / Thermal stability of metal Ohmic contacts in indium gallium zinc oxide transistors using a graphene barrier layer. In: Applied Physics Letters. 2013 ; Vol. 102, No. 11.
@article{92ea0e3885c544529bfeeffc84f587df,
title = "Thermal stability of metal Ohmic contacts in indium gallium zinc oxide transistors using a graphene barrier layer",
abstract = "The excellent impermeability of graphene was exploited to produce stable ohmic contact at the interface between Al metal and a semiconducting indium gallium zinc oxide (IGZO) layer after high-temperature annealing. Thin film transistors (TFTs) were fabricated with and without a graphene interlayer between the Al metal and the IGZO channel region. Metal contact at the interface prepared without a graphene interlayer showed serious instabilities in the IGZO TFT under thermal annealing; however, the insertion of a graphene interlayer between the IGZO channel and the Al metal offered good stability under repeated high-temperature annealing cycles and maintained ohmic contact.",
author = "{Eun Lee}, Jeong and Sharma, {Bhupendra K.} and Lee, {Seoung Ki} and Haseok Jeon and {Hee Hong}, Byung and Lee, {Hoo Jeong} and Ahn, {Jong Hyun}",
year = "2013",
month = "3",
day = "18",
doi = "10.1063/1.4796174",
language = "English",
volume = "102",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

Thermal stability of metal Ohmic contacts in indium gallium zinc oxide transistors using a graphene barrier layer. / Eun Lee, Jeong; Sharma, Bhupendra K.; Lee, Seoung Ki; Jeon, Haseok; Hee Hong, Byung; Lee, Hoo Jeong; Ahn, Jong Hyun.

In: Applied Physics Letters, Vol. 102, No. 11, 113112, 18.03.2013.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Thermal stability of metal Ohmic contacts in indium gallium zinc oxide transistors using a graphene barrier layer

AU - Eun Lee, Jeong

AU - Sharma, Bhupendra K.

AU - Lee, Seoung Ki

AU - Jeon, Haseok

AU - Hee Hong, Byung

AU - Lee, Hoo Jeong

AU - Ahn, Jong Hyun

PY - 2013/3/18

Y1 - 2013/3/18

N2 - The excellent impermeability of graphene was exploited to produce stable ohmic contact at the interface between Al metal and a semiconducting indium gallium zinc oxide (IGZO) layer after high-temperature annealing. Thin film transistors (TFTs) were fabricated with and without a graphene interlayer between the Al metal and the IGZO channel region. Metal contact at the interface prepared without a graphene interlayer showed serious instabilities in the IGZO TFT under thermal annealing; however, the insertion of a graphene interlayer between the IGZO channel and the Al metal offered good stability under repeated high-temperature annealing cycles and maintained ohmic contact.

AB - The excellent impermeability of graphene was exploited to produce stable ohmic contact at the interface between Al metal and a semiconducting indium gallium zinc oxide (IGZO) layer after high-temperature annealing. Thin film transistors (TFTs) were fabricated with and without a graphene interlayer between the Al metal and the IGZO channel region. Metal contact at the interface prepared without a graphene interlayer showed serious instabilities in the IGZO TFT under thermal annealing; however, the insertion of a graphene interlayer between the IGZO channel and the Al metal offered good stability under repeated high-temperature annealing cycles and maintained ohmic contact.

UR - http://www.scopus.com/inward/record.url?scp=84875717928&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84875717928&partnerID=8YFLogxK

U2 - 10.1063/1.4796174

DO - 10.1063/1.4796174

M3 - Article

AN - SCOPUS:84875717928

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

M1 - 113112

ER -