Thermal stability of metal Ohmic contacts in indium gallium zinc oxide transistors using a graphene barrier layer

Jeong Eun Lee; Bhupendra K. Sharma; Seoung Ki Lee; Haseok Jeon; Byung Hee Hong; Hoo Jeong Lee; Jong Hyun Ahn

doi:10.1063/1.4796174

Thermal stability of metal Ohmic contacts in indium gallium zinc oxide transistors using a graphene barrier layer

Jeong Eun Lee, Bhupendra K. Sharma, Seoung Ki Lee, Haseok Jeon, Byung Hee Hong, Hoo Jeong Lee, Jong Hyun Ahn

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

The excellent impermeability of graphene was exploited to produce stable ohmic contact at the interface between Al metal and a semiconducting indium gallium zinc oxide (IGZO) layer after high-temperature annealing. Thin film transistors (TFTs) were fabricated with and without a graphene interlayer between the Al metal and the IGZO channel region. Metal contact at the interface prepared without a graphene interlayer showed serious instabilities in the IGZO TFT under thermal annealing; however, the insertion of a graphene interlayer between the IGZO channel and the Al metal offered good stability under repeated high-temperature annealing cycles and maintained ohmic contact.

Original language	English
Article number	113112
Journal	Applied Physics Letters
Volume	102
Issue number	11
DOIs	https://doi.org/10.1063/1.4796174
Publication status	Published - 2013 Mar 18

Bibliographical note

Funding Information:
This work was supported by the Basic Research Program (2012R1A2A1A03006049 and 2009-0083540), Global Frontier Research Center for Advanced Soft Electronics (2011-0031635) through the National Research Foundation of Korea (NRF), funded by the Ministry of Education, Science and Technology and the Technology Innovation Program (Grant 10041066) funded by the Ministry of Knowledge Economy (MKE), Republic of Korea.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Thermal stability of metal Ohmic contacts in indium gallium zinc oxide transistors using a graphene barrier layer",

abstract = "The excellent impermeability of graphene was exploited to produce stable ohmic contact at the interface between Al metal and a semiconducting indium gallium zinc oxide (IGZO) layer after high-temperature annealing. Thin film transistors (TFTs) were fabricated with and without a graphene interlayer between the Al metal and the IGZO channel region. Metal contact at the interface prepared without a graphene interlayer showed serious instabilities in the IGZO TFT under thermal annealing; however, the insertion of a graphene interlayer between the IGZO channel and the Al metal offered good stability under repeated high-temperature annealing cycles and maintained ohmic contact.",

author = "{Eun Lee}, Jeong and Sharma, {Bhupendra K.} and Lee, {Seoung Ki} and Haseok Jeon and {Hee Hong}, Byung and Lee, {Hoo Jeong} and Ahn, {Jong Hyun}",

note = "Funding Information: This work was supported by the Basic Research Program (2012R1A2A1A03006049 and 2009-0083540), Global Frontier Research Center for Advanced Soft Electronics (2011-0031635) through the National Research Foundation of Korea (NRF), funded by the Ministry of Education, Science and Technology and the Technology Innovation Program (Grant 10041066) funded by the Ministry of Knowledge Economy (MKE), Republic of Korea. ",

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AU - Eun Lee, Jeong

AU - Sharma, Bhupendra K.

AU - Lee, Seoung Ki

AU - Jeon, Haseok

AU - Hee Hong, Byung

AU - Lee, Hoo Jeong

AU - Ahn, Jong Hyun

N1 - Funding Information: This work was supported by the Basic Research Program (2012R1A2A1A03006049 and 2009-0083540), Global Frontier Research Center for Advanced Soft Electronics (2011-0031635) through the National Research Foundation of Korea (NRF), funded by the Ministry of Education, Science and Technology and the Technology Innovation Program (Grant 10041066) funded by the Ministry of Knowledge Economy (MKE), Republic of Korea.

PY - 2013/3/18

Y1 - 2013/3/18

N2 - The excellent impermeability of graphene was exploited to produce stable ohmic contact at the interface between Al metal and a semiconducting indium gallium zinc oxide (IGZO) layer after high-temperature annealing. Thin film transistors (TFTs) were fabricated with and without a graphene interlayer between the Al metal and the IGZO channel region. Metal contact at the interface prepared without a graphene interlayer showed serious instabilities in the IGZO TFT under thermal annealing; however, the insertion of a graphene interlayer between the IGZO channel and the Al metal offered good stability under repeated high-temperature annealing cycles and maintained ohmic contact.

AB - The excellent impermeability of graphene was exploited to produce stable ohmic contact at the interface between Al metal and a semiconducting indium gallium zinc oxide (IGZO) layer after high-temperature annealing. Thin film transistors (TFTs) were fabricated with and without a graphene interlayer between the Al metal and the IGZO channel region. Metal contact at the interface prepared without a graphene interlayer showed serious instabilities in the IGZO TFT under thermal annealing; however, the insertion of a graphene interlayer between the IGZO channel and the Al metal offered good stability under repeated high-temperature annealing cycles and maintained ohmic contact.

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