Thermal study of GaN-based HFET devices

Jeong Park, Selah Choe Park, Moo Whan Shin, Chin C. Lee

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The most important aspects of GaN-based devices are high breakdown field and high operating temperature. One high-speed device structure is the HFET (heterojunction field effect transistor) where two-dimensional electron gas (2DEG) is formed on AlGaN/GaN heterointerface. The electrons in 2DEG have significantly higher mobility than that in the conduction channel of a conventional metal-semiconductor field effect transistor (MESFET). Traditionally, GaN-based devices are fabricated on sapphire substrates. Since the sapphire substrate has relatively low thermal conductivity (0.28 W/cmK), it is necessary to carry out thermal analysis to ensure that the peak operating temperature of the device is within the acceptable range. Much effort has been exerted to provide sufficient thermal analysis in the past. In this paper, we present our thermal simulation using codes previously developed based on analytical solutions in our laboratory and compare the result of thermal simulation to actual thermal measurement results using nematic liquid crystal. Thermal simulation results agree reasonably well with measurement profiles.

Original languageEnglish
Pages (from-to)617-621
Number of pages5
JournalProceedings - Electronic Components and Technology Conference
DOIs
Publication statusPublished - 2002 Jan 1

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Field effect transistors
Two dimensional electron gas
Heterojunctions
Aluminum Oxide
Sapphire
Thermoanalysis
MESFET devices
Nematic liquid crystals
Substrates
Thermal conductivity
Temperature
Hot Temperature
Electrons

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

@article{737ccc98a7da4d1199d373d49474ee9b,
title = "Thermal study of GaN-based HFET devices",
abstract = "The most important aspects of GaN-based devices are high breakdown field and high operating temperature. One high-speed device structure is the HFET (heterojunction field effect transistor) where two-dimensional electron gas (2DEG) is formed on AlGaN/GaN heterointerface. The electrons in 2DEG have significantly higher mobility than that in the conduction channel of a conventional metal-semiconductor field effect transistor (MESFET). Traditionally, GaN-based devices are fabricated on sapphire substrates. Since the sapphire substrate has relatively low thermal conductivity (0.28 W/cmK), it is necessary to carry out thermal analysis to ensure that the peak operating temperature of the device is within the acceptable range. Much effort has been exerted to provide sufficient thermal analysis in the past. In this paper, we present our thermal simulation using codes previously developed based on analytical solutions in our laboratory and compare the result of thermal simulation to actual thermal measurement results using nematic liquid crystal. Thermal simulation results agree reasonably well with measurement profiles.",
author = "Jeong Park and Park, {Selah Choe} and Shin, {Moo Whan} and Lee, {Chin C.}",
year = "2002",
month = "1",
day = "1",
doi = "10.1109/ECTC.2002.1008159",
language = "English",
pages = "617--621",
journal = "Proceedings - Electronic Components and Technology Conference",
issn = "0569-5503",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

Thermal study of GaN-based HFET devices. / Park, Jeong; Park, Selah Choe; Shin, Moo Whan; Lee, Chin C.

In: Proceedings - Electronic Components and Technology Conference, 01.01.2002, p. 617-621.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Thermal study of GaN-based HFET devices

AU - Park, Jeong

AU - Park, Selah Choe

AU - Shin, Moo Whan

AU - Lee, Chin C.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - The most important aspects of GaN-based devices are high breakdown field and high operating temperature. One high-speed device structure is the HFET (heterojunction field effect transistor) where two-dimensional electron gas (2DEG) is formed on AlGaN/GaN heterointerface. The electrons in 2DEG have significantly higher mobility than that in the conduction channel of a conventional metal-semiconductor field effect transistor (MESFET). Traditionally, GaN-based devices are fabricated on sapphire substrates. Since the sapphire substrate has relatively low thermal conductivity (0.28 W/cmK), it is necessary to carry out thermal analysis to ensure that the peak operating temperature of the device is within the acceptable range. Much effort has been exerted to provide sufficient thermal analysis in the past. In this paper, we present our thermal simulation using codes previously developed based on analytical solutions in our laboratory and compare the result of thermal simulation to actual thermal measurement results using nematic liquid crystal. Thermal simulation results agree reasonably well with measurement profiles.

AB - The most important aspects of GaN-based devices are high breakdown field and high operating temperature. One high-speed device structure is the HFET (heterojunction field effect transistor) where two-dimensional electron gas (2DEG) is formed on AlGaN/GaN heterointerface. The electrons in 2DEG have significantly higher mobility than that in the conduction channel of a conventional metal-semiconductor field effect transistor (MESFET). Traditionally, GaN-based devices are fabricated on sapphire substrates. Since the sapphire substrate has relatively low thermal conductivity (0.28 W/cmK), it is necessary to carry out thermal analysis to ensure that the peak operating temperature of the device is within the acceptable range. Much effort has been exerted to provide sufficient thermal analysis in the past. In this paper, we present our thermal simulation using codes previously developed based on analytical solutions in our laboratory and compare the result of thermal simulation to actual thermal measurement results using nematic liquid crystal. Thermal simulation results agree reasonably well with measurement profiles.

UR - http://www.scopus.com/inward/record.url?scp=0036287035&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036287035&partnerID=8YFLogxK

U2 - 10.1109/ECTC.2002.1008159

DO - 10.1109/ECTC.2002.1008159

M3 - Article

SP - 617

EP - 621

JO - Proceedings - Electronic Components and Technology Conference

JF - Proceedings - Electronic Components and Technology Conference

SN - 0569-5503

ER -