Thermal System Identification (TSI): A methodology for post-silicon characterization and prediction of the transient thermal field in multicore chips

Minki Cho; William Song; Sudhakar Yalamanchili; Saibal Mukhopadhyay

doi:10.1109/STHERM.2012.6188836

Thermal System Identification (TSI): A methodology for post-silicon characterization and prediction of the transient thermal field in multicore chips

Minki Cho, William Song, Sudhakar Yalamanchili, Saibal Mukhopadhyay

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Citations (Scopus)

Abstract

This paper presents a methodology for post-silicon thermal prediction to predict the transient thermal field a multicore package for various workload considering chip-to-chip variations in electrical and thermal properties. We use time-frequency duality to represent thermal system in frequency domain as a low-pass filter augmented with a positive feedback path for leakage-temperature interaction. This thermal system is identified through power/thermal measurements on a packaged IC and is used for post-silicon thermal prediction. The effectiveness of the proposed effort is presented considering a 64 core processor in predictive 22nm node and SPEC2006 benchmark applications.

Original language	English
Title of host publication	28th Annual IEEE Semiconductor Thermal Measurement and Management Symposium, SEMI-THERM 2012
Pages	118-124
Number of pages	7
DOIs	https://doi.org/10.1109/STHERM.2012.6188836
Publication status	Published - 2012 May 22
Event	28th Annual IEEE Semiconductor Thermal Measurement and Management Symposium, SEMI-THERM 2012 - San Jose, CA, United States Duration: 2012 Mar 18 → 2012 Mar 22

Publication series

Name	Annual IEEE Semiconductor Thermal Measurement and Management Symposium
ISSN (Print)	1065-2221

Other

Other	28th Annual IEEE Semiconductor Thermal Measurement and Management Symposium, SEMI-THERM 2012
Country	United States
City	San Jose, CA
Period	12/3/18 → 12/3/22

All Science Journal Classification (ASJC) codes

Instrumentation
Electrical and Electronic Engineering

Access to Document

10.1109/STHERM.2012.6188836

Fingerprint Dive into the research topics of 'Thermal System Identification (TSI): A methodology for post-silicon characterization and prediction of the transient thermal field in multicore chips'. Together they form a unique fingerprint.

Cite this

Cho, M., Song, W., Yalamanchili, S., & Mukhopadhyay, S. (2012). Thermal System Identification (TSI): A methodology for post-silicon characterization and prediction of the transient thermal field in multicore chips. In 28th Annual IEEE Semiconductor Thermal Measurement and Management Symposium, SEMI-THERM 2012 (pp. 118-124). [6188836] (Annual IEEE Semiconductor Thermal Measurement and Management Symposium). https://doi.org/10.1109/STHERM.2012.6188836

Cho, Minki ; Song, William ; Yalamanchili, Sudhakar ; Mukhopadhyay, Saibal. / Thermal System Identification (TSI) : A methodology for post-silicon characterization and prediction of the transient thermal field in multicore chips. 28th Annual IEEE Semiconductor Thermal Measurement and Management Symposium, SEMI-THERM 2012. 2012. pp. 118-124 (Annual IEEE Semiconductor Thermal Measurement and Management Symposium).

@inproceedings{3dffd14a7d7240afbb72a0416f3574ff,

title = "Thermal System Identification (TSI): A methodology for post-silicon characterization and prediction of the transient thermal field in multicore chips",

abstract = "This paper presents a methodology for post-silicon thermal prediction to predict the transient thermal field a multicore package for various workload considering chip-to-chip variations in electrical and thermal properties. We use time-frequency duality to represent thermal system in frequency domain as a low-pass filter augmented with a positive feedback path for leakage-temperature interaction. This thermal system is identified through power/thermal measurements on a packaged IC and is used for post-silicon thermal prediction. The effectiveness of the proposed effort is presented considering a 64 core processor in predictive 22nm node and SPEC2006 benchmark applications.",

author = "Minki Cho and William Song and Sudhakar Yalamanchili and Saibal Mukhopadhyay",

year = "2012",

month = may,

day = "22",

doi = "10.1109/STHERM.2012.6188836",

language = "English",

isbn = "9781467311113",

series = "Annual IEEE Semiconductor Thermal Measurement and Management Symposium",

pages = "118--124",

booktitle = "28th Annual IEEE Semiconductor Thermal Measurement and Management Symposium, SEMI-THERM 2012",

note = "28th Annual IEEE Semiconductor Thermal Measurement and Management Symposium, SEMI-THERM 2012 ; Conference date: 18-03-2012 Through 22-03-2012",

}

Cho, M, Song, W, Yalamanchili, S & Mukhopadhyay, S 2012, Thermal System Identification (TSI): A methodology for post-silicon characterization and prediction of the transient thermal field in multicore chips. in 28th Annual IEEE Semiconductor Thermal Measurement and Management Symposium, SEMI-THERM 2012., 6188836, Annual IEEE Semiconductor Thermal Measurement and Management Symposium, pp. 118-124, 28th Annual IEEE Semiconductor Thermal Measurement and Management Symposium, SEMI-THERM 2012, San Jose, CA, United States, 12/3/18. https://doi.org/10.1109/STHERM.2012.6188836

Thermal System Identification (TSI) : A methodology for post-silicon characterization and prediction of the transient thermal field in multicore chips. / Cho, Minki; Song, William; Yalamanchili, Sudhakar; Mukhopadhyay, Saibal.

28th Annual IEEE Semiconductor Thermal Measurement and Management Symposium, SEMI-THERM 2012. 2012. p. 118-124 6188836 (Annual IEEE Semiconductor Thermal Measurement and Management Symposium).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Thermal System Identification (TSI)

T2 - 28th Annual IEEE Semiconductor Thermal Measurement and Management Symposium, SEMI-THERM 2012

AU - Cho, Minki

AU - Song, William

AU - Yalamanchili, Sudhakar

AU - Mukhopadhyay, Saibal

PY - 2012/5/22

Y1 - 2012/5/22

N2 - This paper presents a methodology for post-silicon thermal prediction to predict the transient thermal field a multicore package for various workload considering chip-to-chip variations in electrical and thermal properties. We use time-frequency duality to represent thermal system in frequency domain as a low-pass filter augmented with a positive feedback path for leakage-temperature interaction. This thermal system is identified through power/thermal measurements on a packaged IC and is used for post-silicon thermal prediction. The effectiveness of the proposed effort is presented considering a 64 core processor in predictive 22nm node and SPEC2006 benchmark applications.

AB - This paper presents a methodology for post-silicon thermal prediction to predict the transient thermal field a multicore package for various workload considering chip-to-chip variations in electrical and thermal properties. We use time-frequency duality to represent thermal system in frequency domain as a low-pass filter augmented with a positive feedback path for leakage-temperature interaction. This thermal system is identified through power/thermal measurements on a packaged IC and is used for post-silicon thermal prediction. The effectiveness of the proposed effort is presented considering a 64 core processor in predictive 22nm node and SPEC2006 benchmark applications.

UR - http://www.scopus.com/inward/record.url?scp=84861121456&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84861121456&partnerID=8YFLogxK

U2 - 10.1109/STHERM.2012.6188836

DO - 10.1109/STHERM.2012.6188836

M3 - Conference contribution

AN - SCOPUS:84861121456

SN - 9781467311113

T3 - Annual IEEE Semiconductor Thermal Measurement and Management Symposium

SP - 118

EP - 124

BT - 28th Annual IEEE Semiconductor Thermal Measurement and Management Symposium, SEMI-THERM 2012

Y2 - 18 March 2012 through 22 March 2012

ER -

Cho M, Song W, Yalamanchili S, Mukhopadhyay S. Thermal System Identification (TSI): A methodology for post-silicon characterization and prediction of the transient thermal field in multicore chips. In 28th Annual IEEE Semiconductor Thermal Measurement and Management Symposium, SEMI-THERM 2012. 2012. p. 118-124. 6188836. (Annual IEEE Semiconductor Thermal Measurement and Management Symposium). https://doi.org/10.1109/STHERM.2012.6188836