Thermally induced desulfurization

Structural transformation of thiophene on the Si(100) surface

Jinwoo Park, Han Koo Lee, Aloysius Soon, B. D. Yu, Suklyun Hong

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We investigated the bonding structures of thiophene molecules adsorbed on the Si(100)-2 × 1 surface at 300 K and its evolution upon annealing by employing core-level photoemission spectroscopy, near-edge X-ray absorption fine structure (NEXAFS), and ab initio calculations. The C 1s and S 2p core-level spectra measured at three different temperatures, 300, 350, and 400 K, are consistently interpreted in terms of the following structures suggested by theoretical calculations: the 2,3- and 2,5-dihydrothiophene (DHT), twisted 2,3- and 2,5-DHT, tetrahydrothiophene (THT), twisted THT, and the desulfurization and twisted desulfurization where the sulfur atom is dissociated from the thiophene ring. We find significantly enhanced desulfurization of thiophene molecules by mild thermal annealing, which is explained by new pathways between desulfurization and other structures.

Original languageEnglish
Pages (from-to)11731-11737
Number of pages7
JournalJournal of Physical Chemistry C
Volume117
Issue number22
DOIs
Publication statusPublished - 2013 Jul 1

Fingerprint

Thiophenes
Thiophene
Desulfurization
thiophenes
Core levels
annealing
Annealing
Molecules
molecules
X ray absorption
sulfur
photoelectric emission
Photoelectron spectroscopy
fine structure
Sulfur
rings
Atoms
spectroscopy
atoms
x rays

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Surfaces, Coatings and Films
  • Physical and Theoretical Chemistry

Cite this

Park, Jinwoo ; Lee, Han Koo ; Soon, Aloysius ; Yu, B. D. ; Hong, Suklyun. / Thermally induced desulfurization : Structural transformation of thiophene on the Si(100) surface. In: Journal of Physical Chemistry C. 2013 ; Vol. 117, No. 22. pp. 11731-11737.
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Thermally induced desulfurization : Structural transformation of thiophene on the Si(100) surface. / Park, Jinwoo; Lee, Han Koo; Soon, Aloysius; Yu, B. D.; Hong, Suklyun.

In: Journal of Physical Chemistry C, Vol. 117, No. 22, 01.07.2013, p. 11731-11737.

Research output: Contribution to journalArticle

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