Abstract
We have investigated the thermally induced tensile strain in Ge-on-Si for use in optical sources of interconnection systems. Epitaxial Ge layers were grown using a two-step hetero-epitaxy at low and high temperatures. The as-grown Ge-on-Si was then annealed for direct bandgap conversion. A tensile strain of 0.06% in the as-grown Ge increased to 0.31% after annealing at 850°C. As the thermal budget of this post-growth anneal was increased, the tensile strain of relaxed Ge-on-Si also increases and a Si-Ge alloy forms. Physical characterization indicates a tunable tensile stain in Geon-Si can be realized using post-growth annealing, which will allow for a wide range of frequencies in optical interconnections.
| Original language | English |
|---|---|
| Pages (from-to) | 5239-5242 |
| Number of pages | 4 |
| Journal | Journal of Nanoscience and Nanotechnology |
| Volume | 16 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2016 May |
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All Science Journal Classification (ASJC) codes
- Bioengineering
- Chemistry(all)
- Biomedical Engineering
- Materials Science(all)
- Condensed Matter Physics
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Thermally induced tensile strain of epitaxial Ge layers grown by a two-step e-beam evaporation process on Si substrates. / Ki, Bugeun; Kim, Kyung Ho; Kim, Hyungjun; Lee, Chulwon; Cho, Yong Hoon; Oh, Jungwoo.
In: Journal of Nanoscience and Nanotechnology, Vol. 16, No. 5, 05.2016, p. 5239-5242.Research output: Contribution to journal › Article
TY - JOUR
T1 - Thermally induced tensile strain of epitaxial Ge layers grown by a two-step e-beam evaporation process on Si substrates
AU - Ki, Bugeun
AU - Kim, Kyung Ho
AU - Kim, Hyungjun
AU - Lee, Chulwon
AU - Cho, Yong Hoon
AU - Oh, Jungwoo
PY - 2016/5
Y1 - 2016/5
N2 - We have investigated the thermally induced tensile strain in Ge-on-Si for use in optical sources of interconnection systems. Epitaxial Ge layers were grown using a two-step hetero-epitaxy at low and high temperatures. The as-grown Ge-on-Si was then annealed for direct bandgap conversion. A tensile strain of 0.06% in the as-grown Ge increased to 0.31% after annealing at 850°C. As the thermal budget of this post-growth anneal was increased, the tensile strain of relaxed Ge-on-Si also increases and a Si-Ge alloy forms. Physical characterization indicates a tunable tensile stain in Geon-Si can be realized using post-growth annealing, which will allow for a wide range of frequencies in optical interconnections.
AB - We have investigated the thermally induced tensile strain in Ge-on-Si for use in optical sources of interconnection systems. Epitaxial Ge layers were grown using a two-step hetero-epitaxy at low and high temperatures. The as-grown Ge-on-Si was then annealed for direct bandgap conversion. A tensile strain of 0.06% in the as-grown Ge increased to 0.31% after annealing at 850°C. As the thermal budget of this post-growth anneal was increased, the tensile strain of relaxed Ge-on-Si also increases and a Si-Ge alloy forms. Physical characterization indicates a tunable tensile stain in Geon-Si can be realized using post-growth annealing, which will allow for a wide range of frequencies in optical interconnections.
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U2 - 10.1166/jnn.2016.12233
DO - 10.1166/jnn.2016.12233
M3 - Article
AN - SCOPUS:84971526217
VL - 16
SP - 5239
EP - 5242
JO - Journal of Nanoscience and Nanotechnology
JF - Journal of Nanoscience and Nanotechnology
SN - 1533-4880
IS - 5
ER -