Thermally induced tensile strain of epitaxial Ge layers grown by a two-step e-beam evaporation process on Si substrates

Bugeun Ki, Kyung Ho Kim, Hyungjun Kim, Chulwon Lee, Yong Hoon Cho, Jungwoo Oh

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have investigated the thermally induced tensile strain in Ge-on-Si for use in optical sources of interconnection systems. Epitaxial Ge layers were grown using a two-step hetero-epitaxy at low and high temperatures. The as-grown Ge-on-Si was then annealed for direct bandgap conversion. A tensile strain of 0.06% in the as-grown Ge increased to 0.31% after annealing at 850°C. As the thermal budget of this post-growth anneal was increased, the tensile strain of relaxed Ge-on-Si also increases and a Si-Ge alloy forms. Physical characterization indicates a tunable tensile stain in Geon-Si can be realized using post-growth annealing, which will allow for a wide range of frequencies in optical interconnections.

Original languageEnglish
Pages (from-to)5239-5242
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume16
Issue number5
DOIs
Publication statusPublished - 2016 May

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this