Thermally induced tensile strain of epitaxial Ge layers grown by a two-step e-beam evaporation process on Si substrates

Bugeun Ki, Kyung Ho Kim, Hyungjun Kim, Chulwon Lee, Yong Hoon Cho, Jungwoo Oh

Research output: Contribution to journalArticle

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Abstract

We have investigated the thermally induced tensile strain in Ge-on-Si for use in optical sources of interconnection systems. Epitaxial Ge layers were grown using a two-step hetero-epitaxy at low and high temperatures. The as-grown Ge-on-Si was then annealed for direct bandgap conversion. A tensile strain of 0.06% in the as-grown Ge increased to 0.31% after annealing at 850°C. As the thermal budget of this post-growth anneal was increased, the tensile strain of relaxed Ge-on-Si also increases and a Si-Ge alloy forms. Physical characterization indicates a tunable tensile stain in Geon-Si can be realized using post-growth annealing, which will allow for a wide range of frequencies in optical interconnections.

Original languageEnglish
Pages (from-to)5239-5242
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume16
Issue number5
DOIs
Publication statusPublished - 2016 May

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All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Ki, Bugeun ; Kim, Kyung Ho ; Kim, Hyungjun ; Lee, Chulwon ; Cho, Yong Hoon ; Oh, Jungwoo. / Thermally induced tensile strain of epitaxial Ge layers grown by a two-step e-beam evaporation process on Si substrates. In: Journal of Nanoscience and Nanotechnology. 2016 ; Vol. 16, No. 5. pp. 5239-5242.
@article{66cf8bea81dd4d2883acba6289175794,
title = "Thermally induced tensile strain of epitaxial Ge layers grown by a two-step e-beam evaporation process on Si substrates",
abstract = "We have investigated the thermally induced tensile strain in Ge-on-Si for use in optical sources of interconnection systems. Epitaxial Ge layers were grown using a two-step hetero-epitaxy at low and high temperatures. The as-grown Ge-on-Si was then annealed for direct bandgap conversion. A tensile strain of 0.06{\%} in the as-grown Ge increased to 0.31{\%} after annealing at 850°C. As the thermal budget of this post-growth anneal was increased, the tensile strain of relaxed Ge-on-Si also increases and a Si-Ge alloy forms. Physical characterization indicates a tunable tensile stain in Geon-Si can be realized using post-growth annealing, which will allow for a wide range of frequencies in optical interconnections.",
author = "Bugeun Ki and Kim, {Kyung Ho} and Hyungjun Kim and Chulwon Lee and Cho, {Yong Hoon} and Jungwoo Oh",
year = "2016",
month = "5",
doi = "10.1166/jnn.2016.12233",
language = "English",
volume = "16",
pages = "5239--5242",
journal = "Journal of Nanoscience and Nanotechnology",
issn = "1533-4880",
publisher = "American Scientific Publishers",
number = "5",

}

Thermally induced tensile strain of epitaxial Ge layers grown by a two-step e-beam evaporation process on Si substrates. / Ki, Bugeun; Kim, Kyung Ho; Kim, Hyungjun; Lee, Chulwon; Cho, Yong Hoon; Oh, Jungwoo.

In: Journal of Nanoscience and Nanotechnology, Vol. 16, No. 5, 05.2016, p. 5239-5242.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Thermally induced tensile strain of epitaxial Ge layers grown by a two-step e-beam evaporation process on Si substrates

AU - Ki, Bugeun

AU - Kim, Kyung Ho

AU - Kim, Hyungjun

AU - Lee, Chulwon

AU - Cho, Yong Hoon

AU - Oh, Jungwoo

PY - 2016/5

Y1 - 2016/5

N2 - We have investigated the thermally induced tensile strain in Ge-on-Si for use in optical sources of interconnection systems. Epitaxial Ge layers were grown using a two-step hetero-epitaxy at low and high temperatures. The as-grown Ge-on-Si was then annealed for direct bandgap conversion. A tensile strain of 0.06% in the as-grown Ge increased to 0.31% after annealing at 850°C. As the thermal budget of this post-growth anneal was increased, the tensile strain of relaxed Ge-on-Si also increases and a Si-Ge alloy forms. Physical characterization indicates a tunable tensile stain in Geon-Si can be realized using post-growth annealing, which will allow for a wide range of frequencies in optical interconnections.

AB - We have investigated the thermally induced tensile strain in Ge-on-Si for use in optical sources of interconnection systems. Epitaxial Ge layers were grown using a two-step hetero-epitaxy at low and high temperatures. The as-grown Ge-on-Si was then annealed for direct bandgap conversion. A tensile strain of 0.06% in the as-grown Ge increased to 0.31% after annealing at 850°C. As the thermal budget of this post-growth anneal was increased, the tensile strain of relaxed Ge-on-Si also increases and a Si-Ge alloy forms. Physical characterization indicates a tunable tensile stain in Geon-Si can be realized using post-growth annealing, which will allow for a wide range of frequencies in optical interconnections.

UR - http://www.scopus.com/inward/record.url?scp=84971526217&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84971526217&partnerID=8YFLogxK

U2 - 10.1166/jnn.2016.12233

DO - 10.1166/jnn.2016.12233

M3 - Article

AN - SCOPUS:84971526217

VL - 16

SP - 5239

EP - 5242

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

SN - 1533-4880

IS - 5

ER -