We have investigated the thermally induced tensile strain in Ge-on-Si for use in optical sources of interconnection systems. Epitaxial Ge layers were grown using a two-step hetero-epitaxy at low and high temperatures. The as-grown Ge-on-Si was then annealed for direct bandgap conversion. A tensile strain of 0.06% in the as-grown Ge increased to 0.31% after annealing at 850°C. As the thermal budget of this post-growth anneal was increased, the tensile strain of relaxed Ge-on-Si also increases and a Si-Ge alloy forms. Physical characterization indicates a tunable tensile stain in Geon-Si can be realized using post-growth annealing, which will allow for a wide range of frequencies in optical interconnections.
Bibliographical noteFunding Information:
This work was supported by the Future Semiconductor Device Technology Development Program (10044735, 10048536) funded by MOTIE and KSRC; IT RandD program of MOTIE/KEIT (10048931); and the MSIP, Korea, under the "IT Consilience Creative Program" (NIPA-2014-H0201-14-1001) supervised by NIPA.
All Science Journal Classification (ASJC) codes
- Biomedical Engineering
- Materials Science(all)
- Condensed Matter Physics