Thermally robust Ni germanide (NiGe) using the cosputtering of Ni and Pt on Ge-on-Si substrate is proposed for high-performance nanoscale germanium metal-oxide-semiconductor field-effect transistors (Ge MOSFETs). The rapid thermal process temperature window for the stable sheet resistance of the proposed Ni-Pt cosputtered structures was about 50-100 C wider than that of the pure Ni structure, with neither NiGe agglomeration nor local penetration of Ni atoms into the substrate. In addition, the surface and interfacial morphologies of the Ni-Pt cosputtered structure were much smoother and more continuous than those of a pure Ni structure. The improvement in the thermal stability was attributed to the change of the crystal structure due to the suppression of the diffusion of Ni atoms and the uniform distribution of Pt atoms. Therefore, this proposed Ni-Pt cosputtered structure could be promising for high-mobility Ge-on-Si MOSFET applications.
Bibliographical noteFunding Information:
Manuscript received April 6, 2012; accepted April 7, 2012. Date of publication April 26, 2012; date of current version July 11, 2012. This work was supported in part by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology under Grant 2009-0069103, and by the Ministry of Education, Science Technology and NRF through the Human Resource Training Project for Regional Innovation.
All Science Journal Classification (ASJC) codes
- Computer Science Applications
- Electrical and Electronic Engineering