Thermally stable, low-resistance PdGe-based ohmic contacts to high-low doped n-GaAs

J. S. Kwak, H. N. Kim, H. K. Baik, J. L. Lee, H. Kim, H. M. Park, S. K. Noh

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Thermally stable, low-resistance PdGe-based ohmic contacts to high-low doped n-GaAs have been developed. The lowest contact resistance obtained is two times lower than that of previously reported PdGe ohmic contacts. The contacts are thermally stable even after isothermal annealing for 5 h at 400°C under atmosphere ambient. X-ray diffraction results and Auger depth profiles show that the good PdGe-based ohmic contact is due to the formation of both AuGa and TiO compounds. The AuGa compound enhances the creation of more Ga vacancies, followed by the incorporation of Ge into Ga vacancies, and the TiO compound suppresses As outdiffusion from the GaAs substrate, respectively.

Original languageEnglish
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
Publication statusPublished - 1995 Dec 1

Fingerprint

low resistance
electric contacts
contact resistance
atmospheres
annealing
profiles
diffraction
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kwak, J. S. ; Kim, H. N. ; Baik, H. K. ; Lee, J. L. ; Kim, H. ; Park, H. M. ; Noh, S. K. / Thermally stable, low-resistance PdGe-based ohmic contacts to high-low doped n-GaAs. In: Applied Physics Letters. 1995 ; Vol. 67.
@article{c28e83d1e07748febc3d21c69e32d003,
title = "Thermally stable, low-resistance PdGe-based ohmic contacts to high-low doped n-GaAs",
abstract = "Thermally stable, low-resistance PdGe-based ohmic contacts to high-low doped n-GaAs have been developed. The lowest contact resistance obtained is two times lower than that of previously reported PdGe ohmic contacts. The contacts are thermally stable even after isothermal annealing for 5 h at 400°C under atmosphere ambient. X-ray diffraction results and Auger depth profiles show that the good PdGe-based ohmic contact is due to the formation of both AuGa and TiO compounds. The AuGa compound enhances the creation of more Ga vacancies, followed by the incorporation of Ge into Ga vacancies, and the TiO compound suppresses As outdiffusion from the GaAs substrate, respectively.",
author = "Kwak, {J. S.} and Kim, {H. N.} and Baik, {H. K.} and Lee, {J. L.} and H. Kim and Park, {H. M.} and Noh, {S. K.}",
year = "1995",
month = "12",
day = "1",
doi = "10.1063/1.114609",
language = "English",
volume = "67",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",

}

Thermally stable, low-resistance PdGe-based ohmic contacts to high-low doped n-GaAs. / Kwak, J. S.; Kim, H. N.; Baik, H. K.; Lee, J. L.; Kim, H.; Park, H. M.; Noh, S. K.

In: Applied Physics Letters, Vol. 67, 01.12.1995.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Thermally stable, low-resistance PdGe-based ohmic contacts to high-low doped n-GaAs

AU - Kwak, J. S.

AU - Kim, H. N.

AU - Baik, H. K.

AU - Lee, J. L.

AU - Kim, H.

AU - Park, H. M.

AU - Noh, S. K.

PY - 1995/12/1

Y1 - 1995/12/1

N2 - Thermally stable, low-resistance PdGe-based ohmic contacts to high-low doped n-GaAs have been developed. The lowest contact resistance obtained is two times lower than that of previously reported PdGe ohmic contacts. The contacts are thermally stable even after isothermal annealing for 5 h at 400°C under atmosphere ambient. X-ray diffraction results and Auger depth profiles show that the good PdGe-based ohmic contact is due to the formation of both AuGa and TiO compounds. The AuGa compound enhances the creation of more Ga vacancies, followed by the incorporation of Ge into Ga vacancies, and the TiO compound suppresses As outdiffusion from the GaAs substrate, respectively.

AB - Thermally stable, low-resistance PdGe-based ohmic contacts to high-low doped n-GaAs have been developed. The lowest contact resistance obtained is two times lower than that of previously reported PdGe ohmic contacts. The contacts are thermally stable even after isothermal annealing for 5 h at 400°C under atmosphere ambient. X-ray diffraction results and Auger depth profiles show that the good PdGe-based ohmic contact is due to the formation of both AuGa and TiO compounds. The AuGa compound enhances the creation of more Ga vacancies, followed by the incorporation of Ge into Ga vacancies, and the TiO compound suppresses As outdiffusion from the GaAs substrate, respectively.

UR - http://www.scopus.com/inward/record.url?scp=0009776497&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0009776497&partnerID=8YFLogxK

U2 - 10.1063/1.114609

DO - 10.1063/1.114609

M3 - Article

AN - SCOPUS:0009776497

VL - 67

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -