Thermodynamic properties and interfacial layer characteristics of Hf O2 thin films deposited by plasma-enhanced atomic layer deposition

Inhoe Kim, Seoungwoo Kuk, Seokhoon Kim, Jinwoo Kim, Hyeongtag Jeon, M. H. Cho, K. B. Chung

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The thermodynamic properties and interfacial characteristics of Hf O2 thin films that were deposited by the direct plasma atomic layer deposition (DPALD) method are investigated. The as-deposited Hf O2 films that were deposited by the DPALD method show crystallization of the Hf O2 layers, which initiates at approximately the 35th cycle (about 2.8 nm) of the DPALD process. Medium-energy ion scattering analysis reveals that the direct O2 plasma causes a compositional change in the interfacial layer as the process progresses. With an increase in the number of process cycles, the Si content decreases and the O content increases at that position, so that the Hf O2 -like Hf-silicate layer is formed on top of the interfacial layer. The enhanced physical reactivity of the oxygen ions in the direct plasma and the Hf-silicate layer may be the driving forces that accelerate the early crystallization of the Hf O2 layer in the DPALD process in the as-deposited state.

Original languageEnglish
Article number222101
JournalApplied Physics Letters
Volume90
Issue number22
DOIs
Publication statusPublished - 2007 Jun 11

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atomic layer epitaxy
thermodynamic properties
thin films
silicates
crystallization
cycles
ion scattering
oxygen ions
reactivity
causes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, Inhoe ; Kuk, Seoungwoo ; Kim, Seokhoon ; Kim, Jinwoo ; Jeon, Hyeongtag ; Cho, M. H. ; Chung, K. B. / Thermodynamic properties and interfacial layer characteristics of Hf O2 thin films deposited by plasma-enhanced atomic layer deposition. In: Applied Physics Letters. 2007 ; Vol. 90, No. 22.
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Thermodynamic properties and interfacial layer characteristics of Hf O2 thin films deposited by plasma-enhanced atomic layer deposition. / Kim, Inhoe; Kuk, Seoungwoo; Kim, Seokhoon; Kim, Jinwoo; Jeon, Hyeongtag; Cho, M. H.; Chung, K. B.

In: Applied Physics Letters, Vol. 90, No. 22, 222101, 11.06.2007.

Research output: Contribution to journalArticle

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