Thermoelectric properties and anisotropic electronic band structure on the In4Se3-x compounds

Jong Soo Rhyee, Eunseog Cho, Kyu Hyoung Lee, Sang Mock Lee, Sang Il Kim, Hyun Sik Kim, Yong Seung Kwon, Sung Jin Kim

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Abstract

We report the high thermoelectric figure-of-merit (ZT) on the Se-deficient polycrystalline compounds of In4Se3-x (0.02≤x≤0.5) and the anisotropic electronic band structure. The Se-deficiency (x) has the effect of decreasing the semiconducting band gap and increasing the power factor. The band structure calculation for In4 Se3-x (x=0.25) exhibits localized hole bands at the Γ-point and Y-S symmetry line, whereas the significant electronic band dispersion is observed along the c-axis. Here, we propose that the high ZT values on those compounds are originated from the anisotropic electronic band structure as well as Peierls distortion.

Original languageEnglish
Article number212106
JournalApplied Physics Letters
Volume95
Issue number21
DOIs
Publication statusPublished - 2009

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Rhyee, J. S., Cho, E., Lee, K. H., Lee, S. M., Kim, S. I., Kim, H. S., Kwon, Y. S., & Kim, S. J. (2009). Thermoelectric properties and anisotropic electronic band structure on the In4Se3-x compounds. Applied Physics Letters, 95(21), [212106]. https://doi.org/10.1063/1.3266579