Abstract
We present thermoelectric properties and electronic structure of the series compounds of In4 Se3-xTex (0.0x3.0). Even if the Te-doping is an isoelectronic substitution, we found that the electron dominated carrier transport in Se-rich region (x≤0.2) evolves into the electron-hole bipolar transport properties in Te-rich region (x≥2.5) from the temperature-dependent thermal conductivity κ (T), Seebeck coefficient S (T), and Hall coefficient RH (T) measurements. The electronic band structures of In4Se3-xTex (x=0.0, 2.75, and 3.0) are not changed significantly with respect to Te-substitution concentrations. From the Boltzmann transport calculation, the electron-hole bipolar effect on thermoelectric transport properties in Te-rich region can be understood by lowering the chemical potential to the valence band maximum in the Te-rich compounds.
| Original language | English |
|---|---|
| Article number | 152104 |
| Journal | Applied Physics Letters |
| Volume | 97 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - 2010 Oct 11 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Thermoelectric properties of bipolar diffusion effect on In4 Se3-xTex compounds. / Rhyee, Jong Soo; Cho, Eunseog; Ahn, Kyunghan; Lee, Kyu Hyoung; Lee, Sang Mock.
In: Applied Physics Letters, Vol. 97, No. 15, 152104, 11.10.2010.Research output: Contribution to journal › Article
TY - JOUR
T1 - Thermoelectric properties of bipolar diffusion effect on In4 Se3-xTex compounds
AU - Rhyee, Jong Soo
AU - Cho, Eunseog
AU - Ahn, Kyunghan
AU - Lee, Kyu Hyoung
AU - Lee, Sang Mock
PY - 2010/10/11
Y1 - 2010/10/11
N2 - We present thermoelectric properties and electronic structure of the series compounds of In4 Se3-xTex (0.0x3.0). Even if the Te-doping is an isoelectronic substitution, we found that the electron dominated carrier transport in Se-rich region (x≤0.2) evolves into the electron-hole bipolar transport properties in Te-rich region (x≥2.5) from the temperature-dependent thermal conductivity κ (T), Seebeck coefficient S (T), and Hall coefficient RH (T) measurements. The electronic band structures of In4Se3-xTex (x=0.0, 2.75, and 3.0) are not changed significantly with respect to Te-substitution concentrations. From the Boltzmann transport calculation, the electron-hole bipolar effect on thermoelectric transport properties in Te-rich region can be understood by lowering the chemical potential to the valence band maximum in the Te-rich compounds.
AB - We present thermoelectric properties and electronic structure of the series compounds of In4 Se3-xTex (0.0x3.0). Even if the Te-doping is an isoelectronic substitution, we found that the electron dominated carrier transport in Se-rich region (x≤0.2) evolves into the electron-hole bipolar transport properties in Te-rich region (x≥2.5) from the temperature-dependent thermal conductivity κ (T), Seebeck coefficient S (T), and Hall coefficient RH (T) measurements. The electronic band structures of In4Se3-xTex (x=0.0, 2.75, and 3.0) are not changed significantly with respect to Te-substitution concentrations. From the Boltzmann transport calculation, the electron-hole bipolar effect on thermoelectric transport properties in Te-rich region can be understood by lowering the chemical potential to the valence band maximum in the Te-rich compounds.
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U2 - 10.1063/1.3493269
DO - 10.1063/1.3493269
M3 - Article
AN - SCOPUS:77958088789
VL - 97
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 15
M1 - 152104
ER -