Thermoelectric properties of bipolar diffusion effect on In4 Se3-xTex compounds

Jong Soo Rhyee, Eunseog Cho, Kyunghan Ahn, Kyu Hyoung Lee, Sang Mock Lee

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Abstract

We present thermoelectric properties and electronic structure of the series compounds of In4 Se3-xTex (0.0x3.0). Even if the Te-doping is an isoelectronic substitution, we found that the electron dominated carrier transport in Se-rich region (x≤0.2) evolves into the electron-hole bipolar transport properties in Te-rich region (x≥2.5) from the temperature-dependent thermal conductivity κ (T), Seebeck coefficient S (T), and Hall coefficient RH (T) measurements. The electronic band structures of In4Se3-xTex (x=0.0, 2.75, and 3.0) are not changed significantly with respect to Te-substitution concentrations. From the Boltzmann transport calculation, the electron-hole bipolar effect on thermoelectric transport properties in Te-rich region can be understood by lowering the chemical potential to the valence band maximum in the Te-rich compounds.

Original languageEnglish
Article number152104
JournalApplied Physics Letters
Volume97
Issue number15
DOIs
Publication statusPublished - 2010 Oct 11

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transport properties
substitutes
Seebeck effect
Hall effect
thermal conductivity
electronic structure
valence
electronics
electrons
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Rhyee, Jong Soo ; Cho, Eunseog ; Ahn, Kyunghan ; Lee, Kyu Hyoung ; Lee, Sang Mock. / Thermoelectric properties of bipolar diffusion effect on In4 Se3-xTex compounds. In: Applied Physics Letters. 2010 ; Vol. 97, No. 15.
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Thermoelectric properties of bipolar diffusion effect on In4 Se3-xTex compounds. / Rhyee, Jong Soo; Cho, Eunseog; Ahn, Kyunghan; Lee, Kyu Hyoung; Lee, Sang Mock.

In: Applied Physics Letters, Vol. 97, No. 15, 152104, 11.10.2010.

Research output: Contribution to journalArticle

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