Thermoelectric properties of bipolar diffusion effect on In4 Se3-xTex compounds

Jong Soo Rhyee; Eunseog Cho; Kyunghan Ahn; Kyu Hyoung Lee; Sang Mock Lee

doi:10.1063/1.3493269

Thermoelectric properties of bipolar diffusion effect on In₄ Se_3-xTe_x compounds

Jong Soo Rhyee, Eunseog Cho, Kyunghan Ahn, Kyu Hyoung Lee, Sang Mock Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

We present thermoelectric properties and electronic structure of the series compounds of In₄ Se_3-xTe_x (0.0x3.0). Even if the Te-doping is an isoelectronic substitution, we found that the electron dominated carrier transport in Se-rich region (x≤0.2) evolves into the electron-hole bipolar transport properties in Te-rich region (x≥2.5) from the temperature-dependent thermal conductivity κ (T), Seebeck coefficient S (T), and Hall coefficient R_H (T) measurements. The electronic band structures of In₄Se_3-xTe_x (x=0.0, 2.75, and 3.0) are not changed significantly with respect to Te-substitution concentrations. From the Boltzmann transport calculation, the electron-hole bipolar effect on thermoelectric transport properties in Te-rich region can be understood by lowering the chemical potential to the valence band maximum in the Te-rich compounds.

Original language	English
Article number	152104
Journal	Applied Physics Letters
Volume	97
Issue number	15
DOIs	https://doi.org/10.1063/1.3493269
Publication status	Published - 2010 Oct 11

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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abstract = "We present thermoelectric properties and electronic structure of the series compounds of In4 Se3-xTex (0.0x3.0). Even if the Te-doping is an isoelectronic substitution, we found that the electron dominated carrier transport in Se-rich region (x≤0.2) evolves into the electron-hole bipolar transport properties in Te-rich region (x≥2.5) from the temperature-dependent thermal conductivity κ (T), Seebeck coefficient S (T), and Hall coefficient RH (T) measurements. The electronic band structures of In4Se3-xTex (x=0.0, 2.75, and 3.0) are not changed significantly with respect to Te-substitution concentrations. From the Boltzmann transport calculation, the electron-hole bipolar effect on thermoelectric transport properties in Te-rich region can be understood by lowering the chemical potential to the valence band maximum in the Te-rich compounds.",

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AU - Cho, Eunseog

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AU - Lee, Kyu Hyoung

AU - Lee, Sang Mock

PY - 2010/10/11

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N2 - We present thermoelectric properties and electronic structure of the series compounds of In4 Se3-xTex (0.0x3.0). Even if the Te-doping is an isoelectronic substitution, we found that the electron dominated carrier transport in Se-rich region (x≤0.2) evolves into the electron-hole bipolar transport properties in Te-rich region (x≥2.5) from the temperature-dependent thermal conductivity κ (T), Seebeck coefficient S (T), and Hall coefficient RH (T) measurements. The electronic band structures of In4Se3-xTex (x=0.0, 2.75, and 3.0) are not changed significantly with respect to Te-substitution concentrations. From the Boltzmann transport calculation, the electron-hole bipolar effect on thermoelectric transport properties in Te-rich region can be understood by lowering the chemical potential to the valence band maximum in the Te-rich compounds.

AB - We present thermoelectric properties and electronic structure of the series compounds of In4 Se3-xTex (0.0x3.0). Even if the Te-doping is an isoelectronic substitution, we found that the electron dominated carrier transport in Se-rich region (x≤0.2) evolves into the electron-hole bipolar transport properties in Te-rich region (x≥2.5) from the temperature-dependent thermal conductivity κ (T), Seebeck coefficient S (T), and Hall coefficient RH (T) measurements. The electronic band structures of In4Se3-xTex (x=0.0, 2.75, and 3.0) are not changed significantly with respect to Te-substitution concentrations. From the Boltzmann transport calculation, the electron-hole bipolar effect on thermoelectric transport properties in Te-rich region can be understood by lowering the chemical potential to the valence band maximum in the Te-rich compounds.

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Thermoelectric properties of bipolar diffusion effect on In₄ Se_3-xTe_x compounds

Abstract

All Science Journal Classification (ASJC) codes

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