Indium-selenium-based compounds have received much attention as thermoelectric materials since a high thermoelectric figure of merit of 1.48 at 705 K was observed in In 4Se 2.35. In this study, four different compositions of indium-selenium compounds, In 2Se 3, InSe, In 4Se 3, and In 4Se 2.35, were prepared by mechanical alloying followed by spark plasma sintering. Their thermoelectric properties such as electrical resistivity, Seebeck coefficient, and thermal conductivity were measured in the temperature range of 300 K to 673 K. All the In-Se compounds comprised nanoscaled structures and exhibited n-type conductivity with Seebeck coefficients ranging from -159 μV K -1 to -568 μV K -1 at room temperature.
Bibliographical noteFunding Information:
This research was supported by the Converging Research Center Program through the Ministry of
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry