The effect of Sn doping on the thermoelectric properties of p-type Bi0.4Sb1.6Te3 (BST) thin films was studied. Sn-doped BST films were grown on 4° tilted GaAs (001) substrates by metal–organic chemical vapor deposition. To control the Sn ion concentration in the films, we systematically controlled the dose of the Sn precursor by varying the H2 flow rate from 0 sccm to 100 sccm. The hole carrier concentration increased as the H2 flow rate was increased. Interestingly, the Seebeck coefficient of the films simultaneously increased with the carrier concentration when the H2 flow rate was increased up to 60 sccm. This might be attributed to the formation of virtual bound states in the valence band by Sn doping. Consequently, the Sn ion doping contributed to the thermopower enhancement of the BST films.
Bibliographical noteFunding Information:
This research was supported by the Korea Institute of Science and Technology (KIST) through the KIST–UNIST Partnership Program (2V03290) and the Technology Innovation Program (10046673, 10048261) funded by the Ministry of Trade, Industry, and Energy.
© 2014, The Minerals, Metals & Materials Society.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry