Thermoelectric Properties of Sn-Doped Bi0.4Sb1.6Te3 Thin Films

Kwang Chon Kim, Beomjin Kwon, Hyun Jae Kim, Seung Hyub Baek, Chan Park, Seong Keun Kim, Jin Sang Kim

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2 Citations (Scopus)

Abstract

The effect of Sn doping on the thermoelectric properties of p-type Bi0.4Sb1.6Te3 (BST) thin films was studied. Sn-doped BST films were grown on 4° tilted GaAs (001) substrates by metal–organic chemical vapor deposition. To control the Sn ion concentration in the films, we systematically controlled the dose of the Sn precursor by varying the H2 flow rate from 0 sccm to 100 sccm. The hole carrier concentration increased as the H2 flow rate was increased. Interestingly, the Seebeck coefficient of the films simultaneously increased with the carrier concentration when the H2 flow rate was increased up to 60 sccm. This might be attributed to the formation of virtual bound states in the valence band by Sn doping. Consequently, the Sn ion doping contributed to the thermopower enhancement of the BST films.

Original languageEnglish
Pages (from-to)1573-1578
Number of pages6
JournalJournal of Electronic Materials
Volume44
Issue number6
DOIs
Publication statusPublished - 2015 Jun 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Kim, K. C., Kwon, B., Kim, H. J., Baek, S. H., Park, C., Kim, S. K., & Kim, J. S. (2015). Thermoelectric Properties of Sn-Doped Bi0.4Sb1.6Te3 Thin Films. Journal of Electronic Materials, 44(6), 1573-1578. https://doi.org/10.1007/s11664-014-3483-9