Thermoelectric Transport Properties of Interface-Controlled p-type Bismuth Antimony Telluride Composites by Reduced Graphene Oxide

Ui Gyeong Hwang, Kyomin Kim, Woochul Kim, Weon Ho Shin, Won Seon Seo, Young Soo Lim

Research output: Contribution to journalArticle

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Abstract

Abstract: We report the thermoelectric transport properties of interface-controlled p-type bismuth antimony telluride (BST) composites using reduced graphene oxide (rGO). The composites were prepared by the spark plasma sintering (SPS) of BST–graphene oxide (GO) hybrid powder, which could induce the in situ reduction of GO into rGO. Compared to the pristine BST, the interface-controlled BST composites exhibited degraded electrical conductivities with similar Seebeck coefficients, consequently resulting in decreased power factors. However, thanks to the suppressed lattice thermal conductivity by the rGO network at the grain boundaries, this disadvantage could be compensated in terms of ZT. Our results will be helpful for understanding thermoelectric transport properties of various graphene-hybrid thermoelectric materials. Graphical Abstract: [Figure not available: see fulltext.].

Original languageEnglish
Pages (from-to)605-612
Number of pages8
JournalElectronic Materials Letters
Volume15
Issue number5
DOIs
Publication statusPublished - 2019 Sep 10

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Antimony
Bismuth
Graphite
Transport properties
Oxides
Graphene
Composite materials
Spark plasma sintering
Seebeck coefficient
Powders
Thermal conductivity
Grain boundaries

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Hwang, Ui Gyeong ; Kim, Kyomin ; Kim, Woochul ; Shin, Weon Ho ; Seo, Won Seon ; Lim, Young Soo. / Thermoelectric Transport Properties of Interface-Controlled p-type Bismuth Antimony Telluride Composites by Reduced Graphene Oxide. In: Electronic Materials Letters. 2019 ; Vol. 15, No. 5. pp. 605-612.
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Thermoelectric Transport Properties of Interface-Controlled p-type Bismuth Antimony Telluride Composites by Reduced Graphene Oxide. / Hwang, Ui Gyeong; Kim, Kyomin; Kim, Woochul; Shin, Weon Ho; Seo, Won Seon; Lim, Young Soo.

In: Electronic Materials Letters, Vol. 15, No. 5, 10.09.2019, p. 605-612.

Research output: Contribution to journalArticle

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AU - Hwang, Ui Gyeong

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AB - Abstract: We report the thermoelectric transport properties of interface-controlled p-type bismuth antimony telluride (BST) composites using reduced graphene oxide (rGO). The composites were prepared by the spark plasma sintering (SPS) of BST–graphene oxide (GO) hybrid powder, which could induce the in situ reduction of GO into rGO. Compared to the pristine BST, the interface-controlled BST composites exhibited degraded electrical conductivities with similar Seebeck coefficients, consequently resulting in decreased power factors. However, thanks to the suppressed lattice thermal conductivity by the rGO network at the grain boundaries, this disadvantage could be compensated in terms of ZT. Our results will be helpful for understanding thermoelectric transport properties of various graphene-hybrid thermoelectric materials. Graphical Abstract: [Figure not available: see fulltext.].

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