Thermoelectric transport properties of n-Type Sb-doped (Hf, Zr, Ti)NiSn half-heusler alloys prepared by temperature-regulated melt spinning and spark plasma sintering

Ki Wook Bae; Jeong Yun Hwang; Sang il Kim; Hyung Mo Jeong; Sunuk Kim; Jae Hong Lim; Hyun Sik Kim; Kyu Hyoung Lee

doi:10.3390/app10144963

Thermoelectric transport properties of n-Type Sb-doped (Hf, Zr, Ti)NiSn half-heusler alloys prepared by temperature-regulated melt spinning and spark plasma sintering

Ki Wook Bae, Jeong Yun Hwang, Sang il Kim, Hyung Mo Jeong, Sunuk Kim, Jae Hong Lim, Hyun Sik Kim, Kyu Hyoung Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Hereinwereport a significantly reduced lattice thermal conductivity of Sb-doped Hf_0.35Zr_0.35 Ti_0.3NiSn half-Heusler alloys with sub-micron grains (grain size of ~300 nm). Polycrystalline bulks of Hf_0.35Zr_0.35Ti_0.3NiSn_1-xSb_x (x = 0.01, 0.02, 0.03) with a complete single half-Heusler phase are prepared using temperature-regulated melt spinning and subsequent spark plasma sintering without a long annealing process. In these submicron-grained bulks, a very low lattice thermal conductivity value of ~2.4Wm^-1 K^-1 is obtained at 300 K due to the intensified phonon scatterings by highly dense grain boundaries and point-defects (Zr and Ti substituted at Hf-sites). A maximum thermoelectric figure of merit, zT, of 0.5 at 800 K is obtained in Hf^0.35Zr^0.35Ti^0.3NiSn^0.99Sb^0.01.

Original language	English
Article number	4963
Journal	Applied Sciences (Switzerland)
Volume	10
Issue number	14
DOIs	https://doi.org/10.3390/app10144963
Publication status	Published - 2020 Jul

Bibliographical note

Funding Information:
Funding: This work was supported by the Technology Innovation Program (20000149, Development of non rare half-Heusler thermoelectric alloys for mid to high temperature waste heat recovery) funded By the Ministry of Trade, Industry & Energy (MOTIE, Korea). This research was also supported by the Global Frontier Program through the Global Frontier Hybrid Interface Materials (GFHIM) project (Grant 2013M3A6B1078870) and the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2019R1A6A1A11055660).

Publisher Copyright:
© 2020 by the authors.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Instrumentation
Engineering(all)
Process Chemistry and Technology
Computer Science Applications
Fluid Flow and Transfer Processes

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10.3390/app10144963

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@article{0c5914a43f93465f9da0a200d89fc1bc,

title = "Thermoelectric transport properties of n-Type Sb-doped (Hf, Zr, Ti)NiSn half-heusler alloys prepared by temperature-regulated melt spinning and spark plasma sintering",

abstract = "Hereinwereport a significantly reduced lattice thermal conductivity of Sb-doped Hf0.35Zr0.35 Ti0.3NiSn half-Heusler alloys with sub-micron grains (grain size of ~300 nm). Polycrystalline bulks of Hf0.35Zr0.35Ti0.3NiSn1-xSbx (x = 0.01, 0.02, 0.03) with a complete single half-Heusler phase are prepared using temperature-regulated melt spinning and subsequent spark plasma sintering without a long annealing process. In these submicron-grained bulks, a very low lattice thermal conductivity value of ~2.4Wm-1 K-1 is obtained at 300 K due to the intensified phonon scatterings by highly dense grain boundaries and point-defects (Zr and Ti substituted at Hf-sites). A maximum thermoelectric figure of merit, zT, of 0.5 at 800 K is obtained in Hf0.35Zr0.35Ti0.3NiSn0.99Sb0.01.",

author = "Bae, {Ki Wook} and Hwang, {Jeong Yun} and Kim, {Sang il} and Jeong, {Hyung Mo} and Sunuk Kim and Lim, {Jae Hong} and Kim, {Hyun Sik} and Lee, {Kyu Hyoung}",

note = "Funding Information: Funding: This work was supported by the Technology Innovation Program (20000149, Development of non rare half-Heusler thermoelectric alloys for mid to high temperature waste heat recovery) funded By the Ministry of Trade, Industry & Energy (MOTIE, Korea). This research was also supported by the Global Frontier Program through the Global Frontier Hybrid Interface Materials (GFHIM) project (Grant 2013M3A6B1078870) and the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2019R1A6A1A11055660). Publisher Copyright: {\textcopyright} 2020 by the authors.",

year = "2020",

month = jul,

doi = "10.3390/app10144963",

language = "English",

volume = "10",

journal = "Applied Sciences (Switzerland)",

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number = "14",

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T1 - Thermoelectric transport properties of n-Type Sb-doped (Hf, Zr, Ti)NiSn half-heusler alloys prepared by temperature-regulated melt spinning and spark plasma sintering

AU - Bae, Ki Wook

AU - Hwang, Jeong Yun

AU - Kim, Sang il

AU - Jeong, Hyung Mo

AU - Kim, Sunuk

AU - Lim, Jae Hong

AU - Kim, Hyun Sik

AU - Lee, Kyu Hyoung

N1 - Funding Information: Funding: This work was supported by the Technology Innovation Program (20000149, Development of non rare half-Heusler thermoelectric alloys for mid to high temperature waste heat recovery) funded By the Ministry of Trade, Industry & Energy (MOTIE, Korea). This research was also supported by the Global Frontier Program through the Global Frontier Hybrid Interface Materials (GFHIM) project (Grant 2013M3A6B1078870) and the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2019R1A6A1A11055660). Publisher Copyright: © 2020 by the authors.

PY - 2020/7

Y1 - 2020/7

N2 - Hereinwereport a significantly reduced lattice thermal conductivity of Sb-doped Hf0.35Zr0.35 Ti0.3NiSn half-Heusler alloys with sub-micron grains (grain size of ~300 nm). Polycrystalline bulks of Hf0.35Zr0.35Ti0.3NiSn1-xSbx (x = 0.01, 0.02, 0.03) with a complete single half-Heusler phase are prepared using temperature-regulated melt spinning and subsequent spark plasma sintering without a long annealing process. In these submicron-grained bulks, a very low lattice thermal conductivity value of ~2.4Wm-1 K-1 is obtained at 300 K due to the intensified phonon scatterings by highly dense grain boundaries and point-defects (Zr and Ti substituted at Hf-sites). A maximum thermoelectric figure of merit, zT, of 0.5 at 800 K is obtained in Hf0.35Zr0.35Ti0.3NiSn0.99Sb0.01.

AB - Hereinwereport a significantly reduced lattice thermal conductivity of Sb-doped Hf0.35Zr0.35 Ti0.3NiSn half-Heusler alloys with sub-micron grains (grain size of ~300 nm). Polycrystalline bulks of Hf0.35Zr0.35Ti0.3NiSn1-xSbx (x = 0.01, 0.02, 0.03) with a complete single half-Heusler phase are prepared using temperature-regulated melt spinning and subsequent spark plasma sintering without a long annealing process. In these submicron-grained bulks, a very low lattice thermal conductivity value of ~2.4Wm-1 K-1 is obtained at 300 K due to the intensified phonon scatterings by highly dense grain boundaries and point-defects (Zr and Ti substituted at Hf-sites). A maximum thermoelectric figure of merit, zT, of 0.5 at 800 K is obtained in Hf0.35Zr0.35Ti0.3NiSn0.99Sb0.01.

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Thermoelectric transport properties of n-Type Sb-doped (Hf, Zr, Ti)NiSn half-heusler alloys prepared by temperature-regulated melt spinning and spark plasma sintering

Abstract

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