Thermopower enhancement of Bi2Te3 films by doping i ions

Kwang Chon Kim, Seung Hyub Baek, Hyun Jae Kim, Dow Bin Hyun, Seong Keun Kim, Jin Sang Kim

Research output: Contribution to journalArticle

8 Citations (Scopus)


The thermoelectric properties of I-doped Bi2Te3 films grown by metal-organic chemical vapor deposition have been studied. I-doped epitaxial (00l) Bi2Te3 films were successfully grown on 4° tilted GaAs (001) substrates at 360 °C. I concentration in the Bi2Te3 films was easily controlled by the variation in a flow rate of H2 carrier gas for the delivery of an isopropyliodide precursor. As I ions in the as-grown Bi2Te3 films were not fully activated, they did not influence the carrier concentration and thermoelectric properties. However, a post-annealing process at 400 °C activated I ions as a donor, accompanied with an increase in the carrier concentration. Interestingly, the I-doped Bi2Te3 films after the post-annealing process also exhibited enhancement of the Seebeck coefficient at the same electron concentration compared to un-doped Bi 2Te3 films. Through doping I ions into Bi 2Te3, the thermopower was also enhanced in Bi 2Te3, and a high power factor of 5 × 10-3 W K-2 m-1 was achieved.

Original languageEnglish
Pages (from-to)2000-2005
Number of pages6
JournalJournal of Electronic Materials
Issue number6
Publication statusPublished - 2014

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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