Thermopower enhancement of Bi2Te3 films by doping i ions

Kwang Chon Kim; Seung Hyub Baek; Hyun Jae Kim; Dow Bin Hyun; Seong Keun Kim; Jin Sang Kim

doi:10.1007/s11664-013-2934-z

Thermopower enhancement of Bi₂Te₃ films by doping i ions

Kwang Chon Kim, Seung Hyub Baek, Hyun Jae Kim, Dow Bin Hyun, Seong Keun Kim, Jin Sang Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The thermoelectric properties of I-doped Bi₂Te₃ films grown by metal-organic chemical vapor deposition have been studied. I-doped epitaxial (00l) Bi₂Te₃ films were successfully grown on 4° tilted GaAs (001) substrates at 360 °C. I concentration in the Bi₂Te₃ films was easily controlled by the variation in a flow rate of H₂ carrier gas for the delivery of an isopropyliodide precursor. As I ions in the as-grown Bi₂Te₃ films were not fully activated, they did not influence the carrier concentration and thermoelectric properties. However, a post-annealing process at 400 °C activated I ions as a donor, accompanied with an increase in the carrier concentration. Interestingly, the I-doped Bi₂Te₃ films after the post-annealing process also exhibited enhancement of the Seebeck coefficient at the same electron concentration compared to un-doped Bi ₂Te₃ films. Through doping I ions into Bi ₂Te₃, the thermopower was also enhanced in Bi ₂Te₃, and a high power factor of 5 × 10^-3 W K^-2 m^-1 was achieved.

Original language	English
Pages (from-to)	2000-2005
Number of pages	6
Journal	Journal of Electronic Materials
Volume	43
Issue number	6
DOIs	https://doi.org/10.1007/s11664-013-2934-z
Publication status	Published - 2014 Jun

Bibliographical note

Funding Information:
This research was supported by the Korea Institute of Science and Technology (KIST) through the Converging Research Center Program through the Ministry of Education, Science and Technology (2012K001306).

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1007/s11664-013-2934-z

Cite this

@article{0298120a779549ffa7ebe60cf23b0e26,

title = "Thermopower enhancement of Bi2Te3 films by doping i ions",

abstract = "The thermoelectric properties of I-doped Bi2Te3 films grown by metal-organic chemical vapor deposition have been studied. I-doped epitaxial (00l) Bi2Te3 films were successfully grown on 4° tilted GaAs (001) substrates at 360 °C. I concentration in the Bi2Te3 films was easily controlled by the variation in a flow rate of H2 carrier gas for the delivery of an isopropyliodide precursor. As I ions in the as-grown Bi2Te3 films were not fully activated, they did not influence the carrier concentration and thermoelectric properties. However, a post-annealing process at 400 °C activated I ions as a donor, accompanied with an increase in the carrier concentration. Interestingly, the I-doped Bi2Te3 films after the post-annealing process also exhibited enhancement of the Seebeck coefficient at the same electron concentration compared to un-doped Bi 2Te3 films. Through doping I ions into Bi 2Te3, the thermopower was also enhanced in Bi 2Te3, and a high power factor of 5 × 10-3 W K-2 m-1 was achieved.",

author = "Kim, {Kwang Chon} and Baek, {Seung Hyub} and Kim, {Hyun Jae} and Hyun, {Dow Bin} and Kim, {Seong Keun} and Kim, {Jin Sang}",

note = "Funding Information: This research was supported by the Korea Institute of Science and Technology (KIST) through the Converging Research Center Program through the Ministry of Education, Science and Technology (2012K001306).",

year = "2014",

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doi = "10.1007/s11664-013-2934-z",

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T1 - Thermopower enhancement of Bi2Te3 films by doping i ions

AU - Kim, Kwang Chon

AU - Baek, Seung Hyub

AU - Kim, Hyun Jae

AU - Hyun, Dow Bin

AU - Kim, Seong Keun

AU - Kim, Jin Sang

N1 - Funding Information: This research was supported by the Korea Institute of Science and Technology (KIST) through the Converging Research Center Program through the Ministry of Education, Science and Technology (2012K001306).

PY - 2014/6

Y1 - 2014/6

N2 - The thermoelectric properties of I-doped Bi2Te3 films grown by metal-organic chemical vapor deposition have been studied. I-doped epitaxial (00l) Bi2Te3 films were successfully grown on 4° tilted GaAs (001) substrates at 360 °C. I concentration in the Bi2Te3 films was easily controlled by the variation in a flow rate of H2 carrier gas for the delivery of an isopropyliodide precursor. As I ions in the as-grown Bi2Te3 films were not fully activated, they did not influence the carrier concentration and thermoelectric properties. However, a post-annealing process at 400 °C activated I ions as a donor, accompanied with an increase in the carrier concentration. Interestingly, the I-doped Bi2Te3 films after the post-annealing process also exhibited enhancement of the Seebeck coefficient at the same electron concentration compared to un-doped Bi 2Te3 films. Through doping I ions into Bi 2Te3, the thermopower was also enhanced in Bi 2Te3, and a high power factor of 5 × 10-3 W K-2 m-1 was achieved.

AB - The thermoelectric properties of I-doped Bi2Te3 films grown by metal-organic chemical vapor deposition have been studied. I-doped epitaxial (00l) Bi2Te3 films were successfully grown on 4° tilted GaAs (001) substrates at 360 °C. I concentration in the Bi2Te3 films was easily controlled by the variation in a flow rate of H2 carrier gas for the delivery of an isopropyliodide precursor. As I ions in the as-grown Bi2Te3 films were not fully activated, they did not influence the carrier concentration and thermoelectric properties. However, a post-annealing process at 400 °C activated I ions as a donor, accompanied with an increase in the carrier concentration. Interestingly, the I-doped Bi2Te3 films after the post-annealing process also exhibited enhancement of the Seebeck coefficient at the same electron concentration compared to un-doped Bi 2Te3 films. Through doping I ions into Bi 2Te3, the thermopower was also enhanced in Bi 2Te3, and a high power factor of 5 × 10-3 W K-2 m-1 was achieved.

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