Thick AIxGa1-xAs in GaAs/AlxGa 1-xAs quantum wells: A leaky barrier

D. S. Kim, H. S. Ko, Y. M. Kim, S. J. Rhee, S. C. Hong, D. S. Yee, J. C. Woo, H. J. Choi, J. Ihm

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication17th Congress of the International Commission for Optics
Subtitle of host publicationOptics for Science and New Technology
Pages729-730
Number of pages2
EditionPART 2
Publication statusPublished - 1996
Event17th Congress of the International Commission for Optics: Optics for Science and New Technology, ICO 1996 - Taejon, Korea, Republic of
Duration: 1996 Aug 191996 Aug 23

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
NumberPART 2
Volume2778
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

Other17th Congress of the International Commission for Optics: Optics for Science and New Technology, ICO 1996
CountryKorea, Republic of
CityTaejon
Period96/8/1996/8/23

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Kim, D. S., Ko, H. S., Kim, Y. M., Rhee, S. J., Hong, S. C., Yee, D. S., Woo, J. C., Choi, H. J., & Ihm, J. (1996). Thick AIxGa1-xAs in GaAs/AlxGa 1-xAs quantum wells: A leaky barrier. In 17th Congress of the International Commission for Optics: Optics for Science and New Technology (PART 2 ed., pp. 729-730). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2778, No. PART 2).