Thick AlxGa1-xAs: An intrinsically percolating barrier owing to its microscopic structural inhomogeneity

D. S. Kim, H. S. Ko, Y. M. Kim, S. J. Rhee, S. C. Hong, Y. H. Yee, D. S. Yee, J. C. Woo, H. J. Choi, J. Ihm, D. H. Woo, K. N. Kang

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Abstract

A significant charge transfer, which differs from tunneling, over thick AlxGa1-xAs barrier in GaAs/ AlxGa1-xAs asymmetric double quantum wells is studied by cw photoluminescence excitation (PLE) and time-resolved photoluminescence. It is found that 300-Å-thick Al0.3Ga0.7As barrier is universally "leaky" with transport time of ∼300 ps, while AlAs and AlAs/GaAs digital alloy barriers with same thickness are not. Aided by a model calculation, we suggest that the intrinsic inhomogeneities in the alloy, which recent x-ray and scanning tunneling microscope studies revealed, may be responsible.

Original languageEnglish
Pages (from-to)2513-2515
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number17
DOIs
Publication statusPublished - 1996 Oct 21

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Kim, D. S., Ko, H. S., Kim, Y. M., Rhee, S. J., Hong, S. C., Yee, Y. H., Yee, D. S., Woo, J. C., Choi, H. J., Ihm, J., Woo, D. H., & Kang, K. N. (1996). Thick AlxGa1-xAs: An intrinsically percolating barrier owing to its microscopic structural inhomogeneity. Applied Physics Letters, 69(17), 2513-2515. https://doi.org/10.1063/1.117724