Thick Al x Ga 1-x As: An intrinsically percolating barrier owing to its microscopic structural inhomogeneity

D. S. Kim, H. S. Ko, Y. M. Kim, S. J. Rhee, S. C. Hong, Y. H. Yee, D. S. Yee, J. C. Woo, H. J. Choi, J. Ihm, D. H. Woo, K. N. Kang

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A significant charge transfer, which differs from tunneling, over thick Al x Ga 1-x As barrier in GaAs/ Al x Ga 1-x As asymmetric double quantum wells is studied by cw photoluminescence excitation (PLE) and time-resolved photoluminescence. It is found that 300-Å-thick Al 0.3 Ga 0.7 As barrier is universally "leaky" with transport time of ∼300 ps, while AlAs and AlAs/GaAs digital alloy barriers with same thickness are not. Aided by a model calculation, we suggest that the intrinsic inhomogeneities in the alloy, which recent x-ray and scanning tunneling microscope studies revealed, may be responsible.

Original languageEnglish
Pages (from-to)2513-2515
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number17
DOIs
Publication statusPublished - 1996 Oct 21

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inhomogeneity
photoluminescence
microscopes
charge transfer
quantum wells
scanning
excitation
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, D. S., Ko, H. S., Kim, Y. M., Rhee, S. J., Hong, S. C., Yee, Y. H., ... Kang, K. N. (1996). Thick Al x Ga 1-x As: An intrinsically percolating barrier owing to its microscopic structural inhomogeneity. Applied Physics Letters, 69(17), 2513-2515. https://doi.org/10.1063/1.117724
Kim, D. S. ; Ko, H. S. ; Kim, Y. M. ; Rhee, S. J. ; Hong, S. C. ; Yee, Y. H. ; Yee, D. S. ; Woo, J. C. ; Choi, H. J. ; Ihm, J. ; Woo, D. H. ; Kang, K. N. / Thick Al x Ga 1-x As : An intrinsically percolating barrier owing to its microscopic structural inhomogeneity. In: Applied Physics Letters. 1996 ; Vol. 69, No. 17. pp. 2513-2515.
@article{5fa0a5087a754ddcb2230696ee1c5faf,
title = "Thick Al x Ga 1-x As: An intrinsically percolating barrier owing to its microscopic structural inhomogeneity",
abstract = "A significant charge transfer, which differs from tunneling, over thick Al x Ga 1-x As barrier in GaAs/ Al x Ga 1-x As asymmetric double quantum wells is studied by cw photoluminescence excitation (PLE) and time-resolved photoluminescence. It is found that 300-{\AA}-thick Al 0.3 Ga 0.7 As barrier is universally {"}leaky{"} with transport time of ∼300 ps, while AlAs and AlAs/GaAs digital alloy barriers with same thickness are not. Aided by a model calculation, we suggest that the intrinsic inhomogeneities in the alloy, which recent x-ray and scanning tunneling microscope studies revealed, may be responsible.",
author = "Kim, {D. S.} and Ko, {H. S.} and Kim, {Y. M.} and Rhee, {S. J.} and Hong, {S. C.} and Yee, {Y. H.} and Yee, {D. S.} and Woo, {J. C.} and Choi, {H. J.} and J. Ihm and Woo, {D. H.} and Kang, {K. N.}",
year = "1996",
month = "10",
day = "21",
doi = "10.1063/1.117724",
language = "English",
volume = "69",
pages = "2513--2515",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "17",

}

Kim, DS, Ko, HS, Kim, YM, Rhee, SJ, Hong, SC, Yee, YH, Yee, DS, Woo, JC, Choi, HJ, Ihm, J, Woo, DH & Kang, KN 1996, 'Thick Al x Ga 1-x As: An intrinsically percolating barrier owing to its microscopic structural inhomogeneity', Applied Physics Letters, vol. 69, no. 17, pp. 2513-2515. https://doi.org/10.1063/1.117724

Thick Al x Ga 1-x As : An intrinsically percolating barrier owing to its microscopic structural inhomogeneity. / Kim, D. S.; Ko, H. S.; Kim, Y. M.; Rhee, S. J.; Hong, S. C.; Yee, Y. H.; Yee, D. S.; Woo, J. C.; Choi, H. J.; Ihm, J.; Woo, D. H.; Kang, K. N.

In: Applied Physics Letters, Vol. 69, No. 17, 21.10.1996, p. 2513-2515.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Thick Al x Ga 1-x As

T2 - An intrinsically percolating barrier owing to its microscopic structural inhomogeneity

AU - Kim, D. S.

AU - Ko, H. S.

AU - Kim, Y. M.

AU - Rhee, S. J.

AU - Hong, S. C.

AU - Yee, Y. H.

AU - Yee, D. S.

AU - Woo, J. C.

AU - Choi, H. J.

AU - Ihm, J.

AU - Woo, D. H.

AU - Kang, K. N.

PY - 1996/10/21

Y1 - 1996/10/21

N2 - A significant charge transfer, which differs from tunneling, over thick Al x Ga 1-x As barrier in GaAs/ Al x Ga 1-x As asymmetric double quantum wells is studied by cw photoluminescence excitation (PLE) and time-resolved photoluminescence. It is found that 300-Å-thick Al 0.3 Ga 0.7 As barrier is universally "leaky" with transport time of ∼300 ps, while AlAs and AlAs/GaAs digital alloy barriers with same thickness are not. Aided by a model calculation, we suggest that the intrinsic inhomogeneities in the alloy, which recent x-ray and scanning tunneling microscope studies revealed, may be responsible.

AB - A significant charge transfer, which differs from tunneling, over thick Al x Ga 1-x As barrier in GaAs/ Al x Ga 1-x As asymmetric double quantum wells is studied by cw photoluminescence excitation (PLE) and time-resolved photoluminescence. It is found that 300-Å-thick Al 0.3 Ga 0.7 As barrier is universally "leaky" with transport time of ∼300 ps, while AlAs and AlAs/GaAs digital alloy barriers with same thickness are not. Aided by a model calculation, we suggest that the intrinsic inhomogeneities in the alloy, which recent x-ray and scanning tunneling microscope studies revealed, may be responsible.

UR - http://www.scopus.com/inward/record.url?scp=0040554513&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0040554513&partnerID=8YFLogxK

U2 - 10.1063/1.117724

DO - 10.1063/1.117724

M3 - Article

AN - SCOPUS:0040554513

VL - 69

SP - 2513

EP - 2515

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

ER -