TY - GEN
T1 - Thick film capacitors with variable Tc on Cu foils
AU - Byeong, Kon Kim
AU - Dong, Joo Shin
AU - Jun, Kwang Song
AU - Yong, Soo Cho
PY - 2008
Y1 - 2008
N2 - High k dielectric thick films, consisting of BaTiO3, a low softening glass and fluoride compounds, were studied to apply them as potential low temperature N2-fireable capacitors on commercially-available Cu foils. Different additive combinations of LiF, ZnF2 and BaF 2 were specifically compared in terms of dielectric constant, dielectric loss and Curie temperature (Tc) for the purpose of optimizing dielectric performance. The thick film consisting of 95BaTiO 3-1.5LiF-1.5ZnF2-2 bismuth borosilicate glass exhibited the best performance, i.e., a dielectric constant of 2,382 and a dissipation factor of 0.021 at Tc of 27°C at the firing temperature of 950°C. This result can be regarded as one of the best performance, compared to literature reported on embedded capacitors in Cu-PCB applications. No apparent Cu-diffusion was detected across the Cu-thick film-Cu foil structure.
AB - High k dielectric thick films, consisting of BaTiO3, a low softening glass and fluoride compounds, were studied to apply them as potential low temperature N2-fireable capacitors on commercially-available Cu foils. Different additive combinations of LiF, ZnF2 and BaF 2 were specifically compared in terms of dielectric constant, dielectric loss and Curie temperature (Tc) for the purpose of optimizing dielectric performance. The thick film consisting of 95BaTiO 3-1.5LiF-1.5ZnF2-2 bismuth borosilicate glass exhibited the best performance, i.e., a dielectric constant of 2,382 and a dissipation factor of 0.021 at Tc of 27°C at the firing temperature of 950°C. This result can be regarded as one of the best performance, compared to literature reported on embedded capacitors in Cu-PCB applications. No apparent Cu-diffusion was detected across the Cu-thick film-Cu foil structure.
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M3 - Conference contribution
AN - SCOPUS:70350322265
SN - 9781605608570
T3 - Materials Research Society Symposium Proceedings
SP - 85
EP - 90
BT - Passive and Electromechanical Materials and Integration
T2 - 2008 MRS Spring Meeting
Y2 - 24 March 2008 through 28 March 2008
ER -