Thickness control of chemical vapor deposition-grown graphene film by oxygen plasma etching with recycled use of Ni catalyst

Seon Joon Kim, Daewoo Kim, Hyung Ouk Choi, Hee Tae Jung

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Ni has been widely used as one of the most important metal catalysts for graphene growth with the chemical vapor deposition (CVD) method. Despite the many advantages, it is difficult to obtain high quality graphene from Ni due to the complexity in controlling the uniformity and thickness of multilayer graphene films. In this study, the thickness of multilayer graphene films grown on Ni was controlled by single-step oxygen plasma etching. The results show that the thickness of the graphene films proportionally decreased with an increase in the plasma etching time where the thickness was controlled from thick graphite films to thin graphene films with a transparency over 80%. Surface topology after oxygen plasma etching showed that uniform etching was achieved, for which the topmost surface of the resulting thin graphene is hydrophilic because of oxygen plasma irradiation, which is advantageous for coating organic layers in device fabrication. Moreover, because of the absence of a metal etching process, the recycled use of Ni catalysts is available, increasing the cost efficiency.

Original languageEnglish
Pages (from-to)4907-4913
Number of pages7
JournalJournal of Nanoscience and Nanotechnology
Volume17
Issue number7
DOIs
Publication statusPublished - 2017 Jan 1

Fingerprint

Thickness control
Graphite
Plasma etching
oxygen plasma
plasma etching
Graphene
Chemical vapor deposition
graphene
vapor deposition
Oxygen
catalysts
Catalysts
Etching
Multilayers
etching
Metals
Organic coatings
metals
Transparency
topology

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

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title = "Thickness control of chemical vapor deposition-grown graphene film by oxygen plasma etching with recycled use of Ni catalyst",
abstract = "Ni has been widely used as one of the most important metal catalysts for graphene growth with the chemical vapor deposition (CVD) method. Despite the many advantages, it is difficult to obtain high quality graphene from Ni due to the complexity in controlling the uniformity and thickness of multilayer graphene films. In this study, the thickness of multilayer graphene films grown on Ni was controlled by single-step oxygen plasma etching. The results show that the thickness of the graphene films proportionally decreased with an increase in the plasma etching time where the thickness was controlled from thick graphite films to thin graphene films with a transparency over 80{\%}. Surface topology after oxygen plasma etching showed that uniform etching was achieved, for which the topmost surface of the resulting thin graphene is hydrophilic because of oxygen plasma irradiation, which is advantageous for coating organic layers in device fabrication. Moreover, because of the absence of a metal etching process, the recycled use of Ni catalysts is available, increasing the cost efficiency.",
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Thickness control of chemical vapor deposition-grown graphene film by oxygen plasma etching with recycled use of Ni catalyst. / Kim, Seon Joon; Kim, Daewoo; Choi, Hyung Ouk; Jung, Hee Tae.

In: Journal of Nanoscience and Nanotechnology, Vol. 17, No. 7, 01.01.2017, p. 4907-4913.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Kim, Seon Joon

AU - Kim, Daewoo

AU - Choi, Hyung Ouk

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AB - Ni has been widely used as one of the most important metal catalysts for graphene growth with the chemical vapor deposition (CVD) method. Despite the many advantages, it is difficult to obtain high quality graphene from Ni due to the complexity in controlling the uniformity and thickness of multilayer graphene films. In this study, the thickness of multilayer graphene films grown on Ni was controlled by single-step oxygen plasma etching. The results show that the thickness of the graphene films proportionally decreased with an increase in the plasma etching time where the thickness was controlled from thick graphite films to thin graphene films with a transparency over 80%. Surface topology after oxygen plasma etching showed that uniform etching was achieved, for which the topmost surface of the resulting thin graphene is hydrophilic because of oxygen plasma irradiation, which is advantageous for coating organic layers in device fabrication. Moreover, because of the absence of a metal etching process, the recycled use of Ni catalysts is available, increasing the cost efficiency.

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