Thickness dependence of the resistive switching behavior of nonvolatile memory device structures based on undoped ZnO films

Youn Hee Kang, Ji Hyuk Choi, Tae Il Lee, Woong Lee, Jae Min Myoung

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

The resistive switching behavior of Al/ZnO/Al layered memory device structures was investigated in connection with varying ZnO layer thickness and related changes in crystallinity and concentration of oxygen-related defects. It was observed that, with increasing thickness, the crystallinity of the ZnO layer was improved and the concentration of oxygen-related defects within the layer increased. While the device showed unipolar switching characteristics, the currentvoltage hysteresis was dependent on the thickness of the ZnO layer. In particular, the set voltage gradually increased with increasing layer thickness in the high resistive state whereas the reset voltage remained almost constant in the low resistive state. The observed operation characteristics of the device structures in relation to the crystallinity and oxygen-related defect concentration of the ZnO layer suggest that extended defects such as grain boundaries and dislocations play important roles in determining device performances.

Original languageEnglish
Pages (from-to)1739-1742
Number of pages4
JournalSolid State Communications
Volume151
Issue number23
DOIs
Publication statusPublished - 2011 Dec 1

Fingerprint

Data storage equipment
Defects
Oxygen
crystallinity
defects
Electric potential
oxygen
Dislocations (crystals)
Hysteresis
Grain boundaries
electric potential
grain boundaries
hysteresis

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

@article{29e5cbfb44ed436d82788dc89fdfe40d,
title = "Thickness dependence of the resistive switching behavior of nonvolatile memory device structures based on undoped ZnO films",
abstract = "The resistive switching behavior of Al/ZnO/Al layered memory device structures was investigated in connection with varying ZnO layer thickness and related changes in crystallinity and concentration of oxygen-related defects. It was observed that, with increasing thickness, the crystallinity of the ZnO layer was improved and the concentration of oxygen-related defects within the layer increased. While the device showed unipolar switching characteristics, the currentvoltage hysteresis was dependent on the thickness of the ZnO layer. In particular, the set voltage gradually increased with increasing layer thickness in the high resistive state whereas the reset voltage remained almost constant in the low resistive state. The observed operation characteristics of the device structures in relation to the crystallinity and oxygen-related defect concentration of the ZnO layer suggest that extended defects such as grain boundaries and dislocations play important roles in determining device performances.",
author = "Kang, {Youn Hee} and Choi, {Ji Hyuk} and Lee, {Tae Il} and Woong Lee and Myoung, {Jae Min}",
year = "2011",
month = "12",
day = "1",
doi = "10.1016/j.ssc.2011.08.036",
language = "English",
volume = "151",
pages = "1739--1742",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Limited",
number = "23",

}

Thickness dependence of the resistive switching behavior of nonvolatile memory device structures based on undoped ZnO films. / Kang, Youn Hee; Choi, Ji Hyuk; Lee, Tae Il; Lee, Woong; Myoung, Jae Min.

In: Solid State Communications, Vol. 151, No. 23, 01.12.2011, p. 1739-1742.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Thickness dependence of the resistive switching behavior of nonvolatile memory device structures based on undoped ZnO films

AU - Kang, Youn Hee

AU - Choi, Ji Hyuk

AU - Lee, Tae Il

AU - Lee, Woong

AU - Myoung, Jae Min

PY - 2011/12/1

Y1 - 2011/12/1

N2 - The resistive switching behavior of Al/ZnO/Al layered memory device structures was investigated in connection with varying ZnO layer thickness and related changes in crystallinity and concentration of oxygen-related defects. It was observed that, with increasing thickness, the crystallinity of the ZnO layer was improved and the concentration of oxygen-related defects within the layer increased. While the device showed unipolar switching characteristics, the currentvoltage hysteresis was dependent on the thickness of the ZnO layer. In particular, the set voltage gradually increased with increasing layer thickness in the high resistive state whereas the reset voltage remained almost constant in the low resistive state. The observed operation characteristics of the device structures in relation to the crystallinity and oxygen-related defect concentration of the ZnO layer suggest that extended defects such as grain boundaries and dislocations play important roles in determining device performances.

AB - The resistive switching behavior of Al/ZnO/Al layered memory device structures was investigated in connection with varying ZnO layer thickness and related changes in crystallinity and concentration of oxygen-related defects. It was observed that, with increasing thickness, the crystallinity of the ZnO layer was improved and the concentration of oxygen-related defects within the layer increased. While the device showed unipolar switching characteristics, the currentvoltage hysteresis was dependent on the thickness of the ZnO layer. In particular, the set voltage gradually increased with increasing layer thickness in the high resistive state whereas the reset voltage remained almost constant in the low resistive state. The observed operation characteristics of the device structures in relation to the crystallinity and oxygen-related defect concentration of the ZnO layer suggest that extended defects such as grain boundaries and dislocations play important roles in determining device performances.

UR - http://www.scopus.com/inward/record.url?scp=80054711345&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80054711345&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2011.08.036

DO - 10.1016/j.ssc.2011.08.036

M3 - Article

AN - SCOPUS:80054711345

VL - 151

SP - 1739

EP - 1742

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 23

ER -