Thickness dependence of the resistive switching behavior of nonvolatile memory device structures based on undoped ZnO films

Youn Hee Kang, Ji Hyuk Choi, Tae Il Lee, Woong Lee, Jae Min Myoung

Research output: Contribution to journalArticle

31 Citations (Scopus)


The resistive switching behavior of Al/ZnO/Al layered memory device structures was investigated in connection with varying ZnO layer thickness and related changes in crystallinity and concentration of oxygen-related defects. It was observed that, with increasing thickness, the crystallinity of the ZnO layer was improved and the concentration of oxygen-related defects within the layer increased. While the device showed unipolar switching characteristics, the currentvoltage hysteresis was dependent on the thickness of the ZnO layer. In particular, the set voltage gradually increased with increasing layer thickness in the high resistive state whereas the reset voltage remained almost constant in the low resistive state. The observed operation characteristics of the device structures in relation to the crystallinity and oxygen-related defect concentration of the ZnO layer suggest that extended defects such as grain boundaries and dislocations play important roles in determining device performances.

Original languageEnglish
Pages (from-to)1739-1742
Number of pages4
JournalSolid State Communications
Issue number23
Publication statusPublished - 2011 Dec 1


All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this