The crystalline structure and interfacial reactions in HfO2 films grown on InP (001) substrates was investigated as a function of film thickness. High resolution transmission electron microscopy and x-ray diffraction measurements were used to investigate changes in the crystalline structure of the HfO2 films. As the thickness of the HfO2 increased, the crystal structure was transformed from monoclinic to tetragonal, and the interfacial layer between the HfO2 film and the InP substrate disappeared. High resolution x-ray photoelectron spectroscopy was also applied to confirm the existence of an interfacial chemical reaction in HfO2 /InP. An interfacial self-cleaning effect occurred during the atomic layer deposition process, resulting in a clear interface with no indication of an interfacial layer between the HfO2 film and the InP surface. Finally, the crystallization process in the HfO2 films was found to be significantly affected by the interfacial energy.
Bibliographical noteFunding Information:
This work was partly supported by a grant from the “Next-Generation Substrate Technology for High Performance Semiconductor Devices” under Grant No. KI002083 of the IT R&D Program of MKE/KEIT of Korea and the Joint Program for Samsung Electronics–Yonsei University.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)