Abstract
As distinct from bulk silicon, ultrathin silicon-on-insulator (SOI) or silicon nanomembranes (Si-NMs) offer excellent electronic and mechanical properties that are essential to the development of electronic/optoelectronic systems. Ultrathin Si-NM field effect transistors (FETs) based on p-doped SOI (100) wafers are investigated. The thickness of the Si-NMs is controllably reduced from 50 nm to 10 nm through the use of a unique etching process. Based on systematic investigation of Si-NM FETs with varying thicknesses, both insulating and metallic behaviors are observed, which can be attributed to carrier enhancement by surface-dipole doping after thickness reduction. Spectroscopy characterization and theoretical simulations reveal that this high surface-dipole density can be inverted, yielding high-density electrons regardless of the bulk p-doped nature of the material, thus significantly enhancing its conductivity. These findings offer a physical understanding of thickness dependence, which is critical to the future development of ultrathin SOI electronics, of relevance to a diverse range of semiconductor applications.
| Original language | English |
|---|---|
| Article number | 1900232 |
| Journal | Advanced Electronic Materials |
| Volume | 5 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2019 Jul |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
Cite this
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Thickness-Dependent Electronic Transport in Ultrathin, Single Crystalline Silicon Nanomembranes. / Song, Enming; Guo, Zhongxun; Li, Guodong; Liao, Fuyou; Li, Gongjin; Du, Haina; Schmidt, Oliver G.; Kim, Minju; Yi, Yeonjin; Bao, Wenzhong; Mei, Yongfeng.
In: Advanced Electronic Materials, Vol. 5, No. 7, 1900232, 07.2019.Research output: Contribution to journal › Article
TY - JOUR
T1 - Thickness-Dependent Electronic Transport in Ultrathin, Single Crystalline Silicon Nanomembranes
AU - Song, Enming
AU - Guo, Zhongxun
AU - Li, Guodong
AU - Liao, Fuyou
AU - Li, Gongjin
AU - Du, Haina
AU - Schmidt, Oliver G.
AU - Kim, Minju
AU - Yi, Yeonjin
AU - Bao, Wenzhong
AU - Mei, Yongfeng
PY - 2019/7
Y1 - 2019/7
N2 - As distinct from bulk silicon, ultrathin silicon-on-insulator (SOI) or silicon nanomembranes (Si-NMs) offer excellent electronic and mechanical properties that are essential to the development of electronic/optoelectronic systems. Ultrathin Si-NM field effect transistors (FETs) based on p-doped SOI (100) wafers are investigated. The thickness of the Si-NMs is controllably reduced from 50 nm to 10 nm through the use of a unique etching process. Based on systematic investigation of Si-NM FETs with varying thicknesses, both insulating and metallic behaviors are observed, which can be attributed to carrier enhancement by surface-dipole doping after thickness reduction. Spectroscopy characterization and theoretical simulations reveal that this high surface-dipole density can be inverted, yielding high-density electrons regardless of the bulk p-doped nature of the material, thus significantly enhancing its conductivity. These findings offer a physical understanding of thickness dependence, which is critical to the future development of ultrathin SOI electronics, of relevance to a diverse range of semiconductor applications.
AB - As distinct from bulk silicon, ultrathin silicon-on-insulator (SOI) or silicon nanomembranes (Si-NMs) offer excellent electronic and mechanical properties that are essential to the development of electronic/optoelectronic systems. Ultrathin Si-NM field effect transistors (FETs) based on p-doped SOI (100) wafers are investigated. The thickness of the Si-NMs is controllably reduced from 50 nm to 10 nm through the use of a unique etching process. Based on systematic investigation of Si-NM FETs with varying thicknesses, both insulating and metallic behaviors are observed, which can be attributed to carrier enhancement by surface-dipole doping after thickness reduction. Spectroscopy characterization and theoretical simulations reveal that this high surface-dipole density can be inverted, yielding high-density electrons regardless of the bulk p-doped nature of the material, thus significantly enhancing its conductivity. These findings offer a physical understanding of thickness dependence, which is critical to the future development of ultrathin SOI electronics, of relevance to a diverse range of semiconductor applications.
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U2 - 10.1002/aelm.201900232
DO - 10.1002/aelm.201900232
M3 - Article
AN - SCOPUS:85065783600
VL - 5
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
SN - 2199-160X
IS - 7
M1 - 1900232
ER -