Abstract
We report on the thickness-dependent Raman spectroscopy of ultrathin silicon (Si) nanomembranes (NMs), whose thicknesses range from 2 to 18 nm, using several excitation energies. We observe that the Raman intensity depends on the thickness and the excitation energy due to the combined effects of interference and resonance from the band-structure modulation. Furthermore, confined acoustic phonon modes in the ultrathin Si NMs were observed in ultralow-frequency Raman spectra, and strong thickness dependence was observed near the quantum limit, which was explained by calculations based on a photoelastic model. Our results provide a reliable method with which to accurately determine the thickness of Si NMs with thicknesses of less than a few nanometers.
| Original language | English |
|---|---|
| Pages (from-to) | 7744-7750 |
| Number of pages | 7 |
| Journal | Nano letters |
| Volume | 17 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2017 Dec 13 |
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All Science Journal Classification (ASJC) codes
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
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}
Thickness-Dependent Phonon Renormalization and Enhanced Raman Scattering in Ultrathin Silicon Nanomembranes. / Lee, Seonwoo; Kim, Kangwon; Dhakal, Krishna P.; Kim, Hyunmin; Yun, Won Seok; Lee, Jaedong; Cheong, Hyeonsik; Ahn, Jong-Hyun.
In: Nano letters, Vol. 17, No. 12, 13.12.2017, p. 7744-7750.Research output: Contribution to journal › Article
TY - JOUR
T1 - Thickness-Dependent Phonon Renormalization and Enhanced Raman Scattering in Ultrathin Silicon Nanomembranes
AU - Lee, Seonwoo
AU - Kim, Kangwon
AU - Dhakal, Krishna P.
AU - Kim, Hyunmin
AU - Yun, Won Seok
AU - Lee, Jaedong
AU - Cheong, Hyeonsik
AU - Ahn, Jong-Hyun
PY - 2017/12/13
Y1 - 2017/12/13
N2 - We report on the thickness-dependent Raman spectroscopy of ultrathin silicon (Si) nanomembranes (NMs), whose thicknesses range from 2 to 18 nm, using several excitation energies. We observe that the Raman intensity depends on the thickness and the excitation energy due to the combined effects of interference and resonance from the band-structure modulation. Furthermore, confined acoustic phonon modes in the ultrathin Si NMs were observed in ultralow-frequency Raman spectra, and strong thickness dependence was observed near the quantum limit, which was explained by calculations based on a photoelastic model. Our results provide a reliable method with which to accurately determine the thickness of Si NMs with thicknesses of less than a few nanometers.
AB - We report on the thickness-dependent Raman spectroscopy of ultrathin silicon (Si) nanomembranes (NMs), whose thicknesses range from 2 to 18 nm, using several excitation energies. We observe that the Raman intensity depends on the thickness and the excitation energy due to the combined effects of interference and resonance from the band-structure modulation. Furthermore, confined acoustic phonon modes in the ultrathin Si NMs were observed in ultralow-frequency Raman spectra, and strong thickness dependence was observed near the quantum limit, which was explained by calculations based on a photoelastic model. Our results provide a reliable method with which to accurately determine the thickness of Si NMs with thicknesses of less than a few nanometers.
UR - http://www.scopus.com/inward/record.url?scp=85038211073&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85038211073&partnerID=8YFLogxK
U2 - 10.1021/acs.nanolett.7b03944
DO - 10.1021/acs.nanolett.7b03944
M3 - Article
C2 - 29136472
AN - SCOPUS:85038211073
VL - 17
SP - 7744
EP - 7750
JO - Nano Letters
JF - Nano Letters
SN - 1530-6984
IS - 12
ER -