Thickness-Dependent Phonon Renormalization and Enhanced Raman Scattering in Ultrathin Silicon Nanomembranes

Seonwoo Lee; Kangwon Kim; Krishna P. Dhakal; Hyunmin Kim; Won Seok Yun; Jaedong Lee; Hyeonsik Cheong; Jong Hyun Ahn

doi:10.1021/acs.nanolett.7b03944

Thickness-Dependent Phonon Renormalization and Enhanced Raman Scattering in Ultrathin Silicon Nanomembranes

Seonwoo Lee, Kangwon Kim, Krishna P. Dhakal, Hyunmin Kim, Won Seok Yun, Jaedong Lee, Hyeonsik Cheong, Jong Hyun Ahn

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We report on the thickness-dependent Raman spectroscopy of ultrathin silicon (Si) nanomembranes (NMs), whose thicknesses range from 2 to 18 nm, using several excitation energies. We observe that the Raman intensity depends on the thickness and the excitation energy due to the combined effects of interference and resonance from the band-structure modulation. Furthermore, confined acoustic phonon modes in the ultrathin Si NMs were observed in ultralow-frequency Raman spectra, and strong thickness dependence was observed near the quantum limit, which was explained by calculations based on a photoelastic model. Our results provide a reliable method with which to accurately determine the thickness of Si NMs with thicknesses of less than a few nanometers.

Original language	English
Pages (from-to)	7744-7750
Number of pages	7
Journal	Nano letters
Volume	17
Issue number	12
DOIs	https://doi.org/10.1021/acs.nanolett.7b03944
Publication status	Published - 2017 Dec 13

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) funded by the Korean government (MSIT) (grant nos. NRF-2015R1A3A2066337, NRF-2016R1A2B3008363, CASE2014M3A6A5060933, and 2011-0031630).

Publisher Copyright:
© 2017 American Chemical Society.

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanical Engineering

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title = "Thickness-Dependent Phonon Renormalization and Enhanced Raman Scattering in Ultrathin Silicon Nanomembranes",

abstract = "We report on the thickness-dependent Raman spectroscopy of ultrathin silicon (Si) nanomembranes (NMs), whose thicknesses range from 2 to 18 nm, using several excitation energies. We observe that the Raman intensity depends on the thickness and the excitation energy due to the combined effects of interference and resonance from the band-structure modulation. Furthermore, confined acoustic phonon modes in the ultrathin Si NMs were observed in ultralow-frequency Raman spectra, and strong thickness dependence was observed near the quantum limit, which was explained by calculations based on a photoelastic model. Our results provide a reliable method with which to accurately determine the thickness of Si NMs with thicknesses of less than a few nanometers.",

author = "Seonwoo Lee and Kangwon Kim and Dhakal, {Krishna P.} and Hyunmin Kim and Yun, {Won Seok} and Jaedong Lee and Hyeonsik Cheong and Ahn, {Jong Hyun}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) funded by the Korean government (MSIT) (grant nos. NRF-2015R1A3A2066337, NRF-2016R1A2B3008363, CASE2014M3A6A5060933, and 2011-0031630). Publisher Copyright: {\textcopyright} 2017 American Chemical Society.",

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doi = "10.1021/acs.nanolett.7b03944",

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T1 - Thickness-Dependent Phonon Renormalization and Enhanced Raman Scattering in Ultrathin Silicon Nanomembranes

AU - Lee, Seonwoo

AU - Kim, Kangwon

AU - Dhakal, Krishna P.

AU - Kim, Hyunmin

AU - Yun, Won Seok

AU - Lee, Jaedong

AU - Cheong, Hyeonsik

AU - Ahn, Jong Hyun

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) funded by the Korean government (MSIT) (grant nos. NRF-2015R1A3A2066337, NRF-2016R1A2B3008363, CASE2014M3A6A5060933, and 2011-0031630). Publisher Copyright: © 2017 American Chemical Society.

PY - 2017/12/13

Y1 - 2017/12/13

N2 - We report on the thickness-dependent Raman spectroscopy of ultrathin silicon (Si) nanomembranes (NMs), whose thicknesses range from 2 to 18 nm, using several excitation energies. We observe that the Raman intensity depends on the thickness and the excitation energy due to the combined effects of interference and resonance from the band-structure modulation. Furthermore, confined acoustic phonon modes in the ultrathin Si NMs were observed in ultralow-frequency Raman spectra, and strong thickness dependence was observed near the quantum limit, which was explained by calculations based on a photoelastic model. Our results provide a reliable method with which to accurately determine the thickness of Si NMs with thicknesses of less than a few nanometers.

AB - We report on the thickness-dependent Raman spectroscopy of ultrathin silicon (Si) nanomembranes (NMs), whose thicknesses range from 2 to 18 nm, using several excitation energies. We observe that the Raman intensity depends on the thickness and the excitation energy due to the combined effects of interference and resonance from the band-structure modulation. Furthermore, confined acoustic phonon modes in the ultrathin Si NMs were observed in ultralow-frequency Raman spectra, and strong thickness dependence was observed near the quantum limit, which was explained by calculations based on a photoelastic model. Our results provide a reliable method with which to accurately determine the thickness of Si NMs with thicknesses of less than a few nanometers.

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Thickness-Dependent Phonon Renormalization and Enhanced Raman Scattering in Ultrathin Silicon Nanomembranes

Abstract

Bibliographical note

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