Thickness dependent properties of Al-doped ZnO film prepared by using the pulsed DC magnetron sputtering with cylindrical target

Beom Ki Shin, Tae Il Lee, Kang Il Park, Kyoung Jun Ahn, Jae Min Myoung

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Various thicknesses of Al-doped ZnO (AZO) films were deposited on glass substrate using pulsed dc magnetron sputtering with a cylindrical target designed for large-area high-speed deposition. The structural, electrical, and optical properties of the films of various thicknesses were characterized. All deposited AZO films have (0002) preferred orientation with the c-axis perpendicular to the substrate. Crystal quality and surface morphology of the films changed according to the film thickness. The samples with higher surface roughness exhibited lower Hall mobility. Analysis of the measured data of the optical band gap and the carrier concentration revealed that there were no changes for all the film thicknesses. The optical transmittances were more than 85% regardless of film thickness within the visible wavelength region. The lowest resistivity, 4.13 × 10-4 Ω ·cm-1, was found in 750 nm films with an electron mobility (μ) of 10.6 cm2V-1s-1 and a carrier concentration (n) of 1.42 × 1021 cm-3.

Original languageEnglish
Pages (from-to)47-50
Number of pages4
JournalKorean Journal of Materials Research
Volume20
Issue number1
DOIs
Publication statusPublished - 2010 Jan 1

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Magnetron sputtering
Film thickness
Carrier concentration
Hall mobility
Electron mobility
Optical band gaps
Opacity
Substrates
Surface morphology
Structural properties
Electric properties
Optical properties
Surface roughness
Glass
Wavelength
Crystals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

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abstract = "Various thicknesses of Al-doped ZnO (AZO) films were deposited on glass substrate using pulsed dc magnetron sputtering with a cylindrical target designed for large-area high-speed deposition. The structural, electrical, and optical properties of the films of various thicknesses were characterized. All deposited AZO films have (0002) preferred orientation with the c-axis perpendicular to the substrate. Crystal quality and surface morphology of the films changed according to the film thickness. The samples with higher surface roughness exhibited lower Hall mobility. Analysis of the measured data of the optical band gap and the carrier concentration revealed that there were no changes for all the film thicknesses. The optical transmittances were more than 85{\%} regardless of film thickness within the visible wavelength region. The lowest resistivity, 4.13 × 10-4 Ω ·cm-1, was found in 750 nm films with an electron mobility (μ) of 10.6 cm2V-1s-1 and a carrier concentration (n) of 1.42 × 1021 cm-3.",
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Thickness dependent properties of Al-doped ZnO film prepared by using the pulsed DC magnetron sputtering with cylindrical target. / Shin, Beom Ki; Lee, Tae Il; Park, Kang Il; Ahn, Kyoung Jun; Myoung, Jae Min.

In: Korean Journal of Materials Research, Vol. 20, No. 1, 01.01.2010, p. 47-50.

Research output: Contribution to journalArticle

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