Thickness dependent properties of ZnSe on (100) GaAs grown by atomic layer epitaxy

C. D. Lee, B. K. Kim, J. W. Kim, H. L. Park, C. H. Chung, S. K. Chang, J. I. Lee, S. K. Noh

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16 Citations (Scopus)

Abstract

ZnSe epilayers were grown on semi-insulating GaAs (100) substrates by ALE (atomic layer epitaxy) modified from CVD (chemical vapor deposition). The optical properties of ZnSe films depending on thickness were studied through micro-Raman and PL (photoluminescence) spectroscopy. The critical thickness was determined to be about 0.1 μm by analyzing the change in the peak shift of LO-phonon modes of ZnSe films. This is confirmed from the increase of the intensities of the deep center band in the PL spectra when the thickness exceeds 0.1 μm.

Original languageEnglish
Pages (from-to)136-139
Number of pages4
JournalJournal of Crystal Growth
Volume138
Issue number1-4
DOIs
Publication statusPublished - 1994 Apr 2

Bibliographical note

Funding Information:
The authors are indebted to Mr. J.S. Kim of ISRC for his help in the micro-Raman measurements. This work was supported in part by the KOSEF through KRIS in 1993 and in part by the ministry of Education of Korea through ISRC in 1992.

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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