Thickness dependent properties of ZnSe on (100) GaAs grown by atomic layer epitaxy

C. D. Lee, B. K. Kim, J. W. Kim, H. L. Park, C. H. Chung, S. K. Chang, J. I. Lee, S. K. Noh

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

ZnSe epilayers were grown on semi-insulating GaAs (100) substrates by ALE (atomic layer epitaxy) modified from CVD (chemical vapor deposition). The optical properties of ZnSe films depending on thickness were studied through micro-Raman and PL (photoluminescence) spectroscopy. The critical thickness was determined to be about 0.1 μm by analyzing the change in the peak shift of LO-phonon modes of ZnSe films. This is confirmed from the increase of the intensities of the deep center band in the PL spectra when the thickness exceeds 0.1 μm.

Original languageEnglish
Pages (from-to)136-139
Number of pages4
JournalJournal of Crystal Growth
Volume138
Issue number1-4
DOIs
Publication statusPublished - 1994 Apr 2

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Thickness dependent properties of ZnSe on (100) GaAs grown by atomic layer epitaxy'. Together they form a unique fingerprint.

  • Cite this

    Lee, C. D., Kim, B. K., Kim, J. W., Park, H. L., Chung, C. H., Chang, S. K., Lee, J. I., & Noh, S. K. (1994). Thickness dependent properties of ZnSe on (100) GaAs grown by atomic layer epitaxy. Journal of Crystal Growth, 138(1-4), 136-139. https://doi.org/10.1016/0022-0248(94)90794-3