Thickness dependent properties of ZnSe on (100) GaAs grown by atomic layer epitaxy

C. D. Lee, B. K. Kim, J. W. Kim, H. L. Park, C. H. Chung, Soo Kyung Chang, J. I. Lee, S. K. Noh

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

ZnSe epilayers were grown on semi-insulating GaAs (100) substrates by ALE (atomic layer epitaxy) modified from CVD (chemical vapor deposition). The optical properties of ZnSe films depending on thickness were studied through micro-Raman and PL (photoluminescence) spectroscopy. The critical thickness was determined to be about 0.1 μm by analyzing the change in the peak shift of LO-phonon modes of ZnSe films. This is confirmed from the increase of the intensities of the deep center band in the PL spectra when the thickness exceeds 0.1 μm.

Original languageEnglish
Pages (from-to)136-139
Number of pages4
JournalJournal of Crystal Growth
Volume138
Issue number1-4
DOIs
Publication statusPublished - 1994 Apr 2

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Atomic layer epitaxy
atomic layer epitaxy
Photoluminescence spectroscopy
Epilayers
photoluminescence
Raman spectroscopy
Chemical vapor deposition
Photoluminescence
Optical properties
Substrates
vapor deposition
optical properties
shift
spectroscopy
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Lee, C. D. ; Kim, B. K. ; Kim, J. W. ; Park, H. L. ; Chung, C. H. ; Chang, Soo Kyung ; Lee, J. I. ; Noh, S. K. / Thickness dependent properties of ZnSe on (100) GaAs grown by atomic layer epitaxy. In: Journal of Crystal Growth. 1994 ; Vol. 138, No. 1-4. pp. 136-139.
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abstract = "ZnSe epilayers were grown on semi-insulating GaAs (100) substrates by ALE (atomic layer epitaxy) modified from CVD (chemical vapor deposition). The optical properties of ZnSe films depending on thickness were studied through micro-Raman and PL (photoluminescence) spectroscopy. The critical thickness was determined to be about 0.1 μm by analyzing the change in the peak shift of LO-phonon modes of ZnSe films. This is confirmed from the increase of the intensities of the deep center band in the PL spectra when the thickness exceeds 0.1 μm.",
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Lee, CD, Kim, BK, Kim, JW, Park, HL, Chung, CH, Chang, SK, Lee, JI & Noh, SK 1994, 'Thickness dependent properties of ZnSe on (100) GaAs grown by atomic layer epitaxy', Journal of Crystal Growth, vol. 138, no. 1-4, pp. 136-139. https://doi.org/10.1016/0022-0248(94)90794-3

Thickness dependent properties of ZnSe on (100) GaAs grown by atomic layer epitaxy. / Lee, C. D.; Kim, B. K.; Kim, J. W.; Park, H. L.; Chung, C. H.; Chang, Soo Kyung; Lee, J. I.; Noh, S. K.

In: Journal of Crystal Growth, Vol. 138, No. 1-4, 02.04.1994, p. 136-139.

Research output: Contribution to journalArticle

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T1 - Thickness dependent properties of ZnSe on (100) GaAs grown by atomic layer epitaxy

AU - Lee, C. D.

AU - Kim, B. K.

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AU - Chang, Soo Kyung

AU - Lee, J. I.

AU - Noh, S. K.

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AB - ZnSe epilayers were grown on semi-insulating GaAs (100) substrates by ALE (atomic layer epitaxy) modified from CVD (chemical vapor deposition). The optical properties of ZnSe films depending on thickness were studied through micro-Raman and PL (photoluminescence) spectroscopy. The critical thickness was determined to be about 0.1 μm by analyzing the change in the peak shift of LO-phonon modes of ZnSe films. This is confirmed from the increase of the intensities of the deep center band in the PL spectra when the thickness exceeds 0.1 μm.

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