Thin film electronic properties of ternary topological insulator

Jiwon Chang; Leonard F. Register; Sanjay K. Banerjee; Bhagawan Sahu

doi:10.1557/opl.2012.724

Thin film electronic properties of ternary topological insulator

Jiwon Chang, Leonard F. Register, Sanjay K. Banerjee, Bhagawan Sahu

School of System & Semiconductor Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Using an ab initio density functional theory (DFT), we study thin film electronic properties of topological insulators (TIs) based on ternary compounds of Tl (thallium) and Bi (bismuth). We consider TlBiX₂ (X=Se, Te) and Bi₂X₂Y (X, Y=Se, Te) compounds. Here we discuss the nature of surface states, their locations in the Brillouin Zone (BZ) and their interactions within the bulk region. Our calculations suggest a critical film thickness to maintain the Dirac cone which is smaller than that in binary Bi-based compounds. Atomic relaxations are found to affect the Dirac cone in some of these compounds. We discuss the penetration depth of surface states into the bulk region.

Original language	English
Title of host publication	Topological Insulator Materials
Pages	1-6
Number of pages	6
DOIs	https://doi.org/10.1557/opl.2012.724
Publication status	Published - 2011
Event	2011 MRS Fall Meeting - Boston, MA, United States Duration: 2011 Nov 28 → 2011 Dec 2

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1393
ISSN (Print)	0272-9172

Conference

Conference	2011 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	11/11/28 → 11/12/2

Bibliographical note

Funding Information:
The authors acknowledge financial support from the Nanoelectronics Research Initiative supported Southwest Academy of Nanoelectronics (NRI-SWAN) center. We thank the Texas advanced computing center (TACC) for computational support(TG-DMR080016N).

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/opl.2012.724

Cite this

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title = "Thin film electronic properties of ternary topological insulator",

abstract = "Using an ab initio density functional theory (DFT), we study thin film electronic properties of topological insulators (TIs) based on ternary compounds of Tl (thallium) and Bi (bismuth). We consider TlBiX2 (X=Se, Te) and Bi2X2Y (X, Y=Se, Te) compounds. Here we discuss the nature of surface states, their locations in the Brillouin Zone (BZ) and their interactions within the bulk region. Our calculations suggest a critical film thickness to maintain the Dirac cone which is smaller than that in binary Bi-based compounds. Atomic relaxations are found to affect the Dirac cone in some of these compounds. We discuss the penetration depth of surface states into the bulk region.",

author = "Jiwon Chang and Register, {Leonard F.} and Banerjee, {Sanjay K.} and Bhagawan Sahu",

note = "Funding Information: The authors acknowledge financial support from the Nanoelectronics Research Initiative supported Southwest Academy of Nanoelectronics (NRI-SWAN) center. We thank the Texas advanced computing center (TACC) for computational support(TG-DMR080016N).; 2011 MRS Fall Meeting ; Conference date: 28-11-2011 Through 02-12-2011",

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doi = "10.1557/opl.2012.724",

language = "English",

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series = "Materials Research Society Symposium Proceedings",

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AU - Register, Leonard F.

AU - Banerjee, Sanjay K.

AU - Sahu, Bhagawan

N1 - Funding Information: The authors acknowledge financial support from the Nanoelectronics Research Initiative supported Southwest Academy of Nanoelectronics (NRI-SWAN) center. We thank the Texas advanced computing center (TACC) for computational support(TG-DMR080016N).

PY - 2011

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N2 - Using an ab initio density functional theory (DFT), we study thin film electronic properties of topological insulators (TIs) based on ternary compounds of Tl (thallium) and Bi (bismuth). We consider TlBiX2 (X=Se, Te) and Bi2X2Y (X, Y=Se, Te) compounds. Here we discuss the nature of surface states, their locations in the Brillouin Zone (BZ) and their interactions within the bulk region. Our calculations suggest a critical film thickness to maintain the Dirac cone which is smaller than that in binary Bi-based compounds. Atomic relaxations are found to affect the Dirac cone in some of these compounds. We discuss the penetration depth of surface states into the bulk region.

AB - Using an ab initio density functional theory (DFT), we study thin film electronic properties of topological insulators (TIs) based on ternary compounds of Tl (thallium) and Bi (bismuth). We consider TlBiX2 (X=Se, Te) and Bi2X2Y (X, Y=Se, Te) compounds. Here we discuss the nature of surface states, their locations in the Brillouin Zone (BZ) and their interactions within the bulk region. Our calculations suggest a critical film thickness to maintain the Dirac cone which is smaller than that in binary Bi-based compounds. Atomic relaxations are found to affect the Dirac cone in some of these compounds. We discuss the penetration depth of surface states into the bulk region.

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DO - 10.1557/opl.2012.724

M3 - Conference contribution

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BT - Topological Insulator Materials

T2 - 2011 MRS Fall Meeting

Y2 - 28 November 2011 through 2 December 2011

ER -

Thin film electronic properties of ternary topological insulator

Abstract

Publication series

Conference

Bibliographical note

All Science Journal Classification (ASJC) codes

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