Thin film passivation of organic light emitting diodes by inductively coupled plasma chemical vapor deposition

Han Ki Kim; Sang Woo Kim; Do Geun Kim; Jae Wook Kang; Myung Soo Kim; Woon Jo Cho

doi:10.1016/j.tsf.2006.11.030

Thin film passivation of organic light emitting diodes by inductively coupled plasma chemical vapor deposition

Han Ki Kim, Sang Woo Kim, Do Geun Kim, Jae Wook Kang, Myung Soo Kim, Woon Jo Cho

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The characteristics of an SiN_x passivation layer grown by a specially designed inductively coupled plasma chemical vapor deposition (ICP-CVD) system with straight antennas for the top-emitting organic light emitting diodes (TOLEDs) are investigated. Using a high-density plasma on the order of ∼ 10¹¹ electrons/cm³ formed by nine straight antennas connected in parallel, a high-density SiN_x passivation layer was deposited on a transparent Mg-Ag cathode at a substrate temperature of 40 °C. Even at a low substrate temperature, single SiN_x passivation layer prepared by ICP-CVD showed a low water vapor transmission rate of 5 × 10^{- 2} g/m²/day and a transparency of ∼ 85% respectively. In addition, current-voltage-luminescence results of the TOLED passivated by the SiN_x layer indicated that the electrical and optical properties of the TOLED were not affected by the high-density plasma during the SiN_x deposition process.

Original language	English
Pages (from-to)	4758-4762
Number of pages	5
Journal	Thin Solid Films
Volume	515
Issue number	11
DOIs	https://doi.org/10.1016/j.tsf.2006.11.030
Publication status	Published - 2007 Apr 9

Bibliographical note

Funding Information:
This work was supported by Korea Research Foundation Grant funded by Korea Government (MOEHRD: Basic Research Promotion Fund) ( KRF-2006-331-D00243).

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2006.11.030

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@article{d6552c5a849e41a89a75df2022e836e1,

title = "Thin film passivation of organic light emitting diodes by inductively coupled plasma chemical vapor deposition",

abstract = "The characteristics of an SiNx passivation layer grown by a specially designed inductively coupled plasma chemical vapor deposition (ICP-CVD) system with straight antennas for the top-emitting organic light emitting diodes (TOLEDs) are investigated. Using a high-density plasma on the order of ∼ 1011 electrons/cm3 formed by nine straight antennas connected in parallel, a high-density SiNx passivation layer was deposited on a transparent Mg-Ag cathode at a substrate temperature of 40 °C. Even at a low substrate temperature, single SiNx passivation layer prepared by ICP-CVD showed a low water vapor transmission rate of 5 × 10- 2 g/m2/day and a transparency of ∼ 85% respectively. In addition, current-voltage-luminescence results of the TOLED passivated by the SiNx layer indicated that the electrical and optical properties of the TOLED were not affected by the high-density plasma during the SiNx deposition process.",

author = "Kim, {Han Ki} and Kim, {Sang Woo} and Kim, {Do Geun} and Kang, {Jae Wook} and Kim, {Myung Soo} and Cho, {Woon Jo}",

note = "Funding Information: This work was supported by Korea Research Foundation Grant funded by Korea Government (MOEHRD: Basic Research Promotion Fund) ( KRF-2006-331-D00243).",

year = "2007",

month = apr,

day = "9",

doi = "10.1016/j.tsf.2006.11.030",

language = "English",

volume = "515",

pages = "4758--4762",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "11",

}

TY - JOUR

T1 - Thin film passivation of organic light emitting diodes by inductively coupled plasma chemical vapor deposition

AU - Kim, Han Ki

AU - Kim, Sang Woo

AU - Kim, Do Geun

AU - Kang, Jae Wook

AU - Kim, Myung Soo

AU - Cho, Woon Jo

N1 - Funding Information: This work was supported by Korea Research Foundation Grant funded by Korea Government (MOEHRD: Basic Research Promotion Fund) ( KRF-2006-331-D00243).

PY - 2007/4/9

Y1 - 2007/4/9

N2 - The characteristics of an SiNx passivation layer grown by a specially designed inductively coupled plasma chemical vapor deposition (ICP-CVD) system with straight antennas for the top-emitting organic light emitting diodes (TOLEDs) are investigated. Using a high-density plasma on the order of ∼ 1011 electrons/cm3 formed by nine straight antennas connected in parallel, a high-density SiNx passivation layer was deposited on a transparent Mg-Ag cathode at a substrate temperature of 40 °C. Even at a low substrate temperature, single SiNx passivation layer prepared by ICP-CVD showed a low water vapor transmission rate of 5 × 10- 2 g/m2/day and a transparency of ∼ 85% respectively. In addition, current-voltage-luminescence results of the TOLED passivated by the SiNx layer indicated that the electrical and optical properties of the TOLED were not affected by the high-density plasma during the SiNx deposition process.

AB - The characteristics of an SiNx passivation layer grown by a specially designed inductively coupled plasma chemical vapor deposition (ICP-CVD) system with straight antennas for the top-emitting organic light emitting diodes (TOLEDs) are investigated. Using a high-density plasma on the order of ∼ 1011 electrons/cm3 formed by nine straight antennas connected in parallel, a high-density SiNx passivation layer was deposited on a transparent Mg-Ag cathode at a substrate temperature of 40 °C. Even at a low substrate temperature, single SiNx passivation layer prepared by ICP-CVD showed a low water vapor transmission rate of 5 × 10- 2 g/m2/day and a transparency of ∼ 85% respectively. In addition, current-voltage-luminescence results of the TOLED passivated by the SiNx layer indicated that the electrical and optical properties of the TOLED were not affected by the high-density plasma during the SiNx deposition process.

UR - http://www.scopus.com/inward/record.url?scp=33847226312&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847226312&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2006.11.030

DO - 10.1016/j.tsf.2006.11.030

M3 - Article

AN - SCOPUS:33847226312

SN - 0040-6090

VL - 515

SP - 4758

EP - 4762

JO - Thin Solid Films

JF - Thin Solid Films

IS - 11

ER -

Thin film passivation of organic light emitting diodes by inductively coupled plasma chemical vapor deposition

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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