Thin-film transistor behaviour and the associated physical origin of water-annealed In-Ga-Zn oxide semiconductor

Byung Du Ahn, Jun Hyung Lim, Mann Ho Cho, Jin Seong Park, Kwun Bum Chung

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

A transparent In-Ga-Zn oxide semiconductor was thermally annealed in an ambient atmosphere of water vapour and the associated electrical and physical properties of the film were investigated. After annealing in water vapour, the resulting thin-film transistor (TFT) exhibits n-type behaviour with a field effect mobility of 11.4cm 2V -1s -1, and an on/off current ratio of 6.65×10 9. The annealing process in water vapour induces changes in the elemental composition and chemical bonding states of Zn and O. These phenomena affect the changes of band alignment including the band gap and conduction band offset (Δ(E CB-E F)) of InGaZnO semiconductors, which is the basis for the improved operation and performance of these TFTs.

Original languageEnglish
Article number415307
JournalJournal of Physics D: Applied Physics
Volume45
Issue number41
DOIs
Publication statusPublished - 2012 Oct 17

Fingerprint

Steam
Thin film transistors
Water vapor
water vapor
transistors
oxides
Water
thin films
Annealing
water
annealing
Conduction bands
conduction bands
Electric properties
Energy gap
Physical properties
physical properties
electrical properties
alignment
Semiconductor materials

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

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abstract = "A transparent In-Ga-Zn oxide semiconductor was thermally annealed in an ambient atmosphere of water vapour and the associated electrical and physical properties of the film were investigated. After annealing in water vapour, the resulting thin-film transistor (TFT) exhibits n-type behaviour with a field effect mobility of 11.4cm 2V -1s -1, and an on/off current ratio of 6.65×10 9. The annealing process in water vapour induces changes in the elemental composition and chemical bonding states of Zn and O. These phenomena affect the changes of band alignment including the band gap and conduction band offset (Δ(E CB-E F)) of InGaZnO semiconductors, which is the basis for the improved operation and performance of these TFTs.",
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Thin-film transistor behaviour and the associated physical origin of water-annealed In-Ga-Zn oxide semiconductor. / Ahn, Byung Du; Lim, Jun Hyung; Cho, Mann Ho; Park, Jin Seong; Chung, Kwun Bum.

In: Journal of Physics D: Applied Physics, Vol. 45, No. 41, 415307, 17.10.2012.

Research output: Contribution to journalArticle

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